Thin-film Electronics and Advanced Materials Laboratory

Working for next generation oxide-ectronics

Check Research
Material design

Effective combined experimental and computational approach

Check Research
Material synthesis

High-quality film growth

Check Research
Material analysis

High-quality film growth

Check Research
Device development

From material to device

Check Research

Oxide Electronic Device Technology Based on Novel Material Development for next generation flexible and transparent electronics

Material design & synthesis

We develop new electronic materiel for next generation transparent, flexible electronics.

Film growth

Thin film growth of oxides by a variety of growth techniques including PVD, CVD, ALD and low-cost chemical solution process.

Device development

The developing of a variety of electronic devices based on new electronic materiel we develop.

Material and device characterization

Detailed material and device analysis based on the experimental and computational techniques.

LATEST PUBLICATIONS

Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses

Yong Zhang, Chi-Hsin Huang, and Kenji Nomura

Appl. Phys. Lett. 121, 262105 (2022)

Toward the Development of High-Performance p -Channel Oxide-TFTs and All-Oxide Complementary Circuits

Kenji Nomura

Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, Wiley (2022)

Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor

Kosuke Matsuzaki, Naoki Tsunoda, Yu Kumagai, Yalun Tang, Kenji Nomura, Fumiyasu Oba, and Hideo Hosono

J. Am. Chem. Soc.(2022)

Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor

Chi-Hsin Huang, Yong Zhang and Kenji Nomura

ACS Appl. Mater. Interfaces (2022)

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

Yalun Tang, Chi-Hsin Huang, and Kenji Nomura

ACS Nano (2022)

Voltage Transfer Characteristics of CMOS-Like Inverters for Ambipolar SnO Thin-Film Transistors

Yong Zhang, Chi-Hsin Huang, and Kenji Nomura

IEEE Electron Device Letters 43 (2022)

Atomically Thin Tin Monoxide-Based pChannel Thin-Film Transistor and a Low-Power Complementary Inverter

Chi-Hsin Huang, Yalun Tang, Tzu-Yi Yang, Yu-Lun Chueh, and Kenji Nomura

ACS Appl. Mater. Interfaces (2021)

Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing

Chi-Hsin Huang, Hsuan Chang, Tzu-Yi Yang, Yi-Chung Wang, Yu-Lun Chueh, and Kenji Nomura

ACS Appl. Mater. Interfaces (2021)

Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film Transistors and High-Gain Zero-VGS-Load Inverter

Hsuan Chang, Chi-Hsin Huang, and Kenji Nomura

ACS Appl. Electron. Mater. (2021)

Recent progress of oxide-TFT-based inverter technology

K. Nomura

Journal of Information Display (2021)

Switching mechanism behind the device operation mode in SnO-TFT

A.W. Lee, Y. Zheng(co-1st author), C.-H. Huang, K. Matsuzaki, and K. Nomura

Advanced electronic Materials (2020)

Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors

H.Chang C.-H. Huang, K. Matsuzaki, and K. Nomura

ACS Appl. Mater. Interfaces (2020).

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

C.-H. Huang, Y.Tang, K. Matsuzaki, and K. Nomura

Appl. Phys. Lett. 117, 043502 (2020)

Hydrogen Defect Termination in SnO for p-channel-TFTs

Alex W Lee, Dong Le, Kosuke Matsuzaki, and Kenji Nomura

ACS Appl. Electron. Mater.2, 1162-1168 (2020)

Threshold switching of non-stoichiometric CuO nanowire for selector application

Chi-Hsin Huang, Kosuke Matsuzaki, and Kenji Nomura

Appl. Phys. Lett. 116, 023503 (2020).

Address

Jacobs Hall Room 3602, Engineer Ln, La Jolla, CA 92093

E-mail: kenomura@eng.ucsd.edu