-
Thin-film Electronics and Advanced Materials Laboratory
Working for next generation oxide-ectronics
Oxide Electronic Device Technology Based on Novel Material Development for next generation flexible and transparent electronics
LATEST PUBLICATIONS

Switching mechanism behind the device operation mode in SnO-TFT
A.W. Lee, Y. Zheng(co-1st author), C.-H. Huang, K. Matsuzaki, and K. Nomura
Advanced electronic Materials (2020)

Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors
H.Chang C.-H. Huang, K. Matsuzaki, and K. Nomura
ACS Appl. Mater. Interfaces (2020).

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire
C.-H. Huang, Y.Tang, K. Matsuzaki, and K. Nomura
Appl. Phys. Lett. 117, 043502 (2020)

Hydrogen Defect Termination in SnO for p-channel-TFTs
Alex W Lee, Dong Le, Kosuke Matsuzaki, and Kenji Nomura
ACS Appl. Electron. Mater.2, 1162-1168 (2020)

Threshold switching of non-stoichiometric CuO nanowire for selector application
Chi-Hsin Huang, Kosuke Matsuzaki, and Kenji Nomura
Appl. Phys. Lett. 116, 023503 (2020).

Electronic Defects in Amorphous Oxide Semiconductors: A Review
Keisuke Ide, Kenji Nomura, Hideo Hosono, and Toshio Kamiya
Phys. Status Solidi A 1800372 (2019)
RECENT EVENTS

@Korean BBQ
5th December 2019

Chi-Hsin presented at IEEE (San Diego)
13th December 2019
Latest Events
-
Chi-Hsin presented at IEEE (San Diego)
13 Dec 2019 -
@Korean BBQ
5 Dec 2019 -
Chi-Hsin & Alex Qualcomm Finalist presentation
19 Apr 2019
