Oxide Electronic Device Technology Based on Novel Material Development for next generation flexible and transparent electronics
LATEST PUBLICATIONS
Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses
Yong Zhang, Chi-Hsin Huang, and Kenji Nomura
Appl. Phys. Lett. 121, 262105 (2022)
Toward the Development of High-Performance p -Channel Oxide-TFTs and All-Oxide Complementary Circuits
Kenji Nomura
Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, Wiley (2022)
Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor
Kosuke Matsuzaki, Naoki Tsunoda, Yu Kumagai, Yalun Tang, Kenji Nomura, Fumiyasu Oba, and Hideo Hosono
J. Am. Chem. Soc.(2022)
Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor
Chi-Hsin Huang, Yong Zhang and Kenji Nomura
ACS Appl. Mater. Interfaces (2022)
Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters
Yalun Tang, Chi-Hsin Huang, and Kenji Nomura
ACS Nano (2022)
Voltage Transfer Characteristics of CMOS-Like Inverters for Ambipolar SnO Thin-Film Transistors
Yong Zhang, Chi-Hsin Huang, and Kenji Nomura
IEEE Electron Device Letters 43 (2022)
Atomically Thin Tin Monoxide-Based pChannel Thin-Film Transistor and a Low-Power Complementary Inverter
Chi-Hsin Huang, Yalun Tang, Tzu-Yi Yang, Yu-Lun Chueh, and Kenji Nomura
ACS Appl. Mater. Interfaces (2021)
Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing
Chi-Hsin Huang, Hsuan Chang, Tzu-Yi Yang, Yi-Chung Wang, Yu-Lun Chueh, and Kenji Nomura
ACS Appl. Mater. Interfaces (2021)
Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film Transistors and High-Gain Zero-VGS-Load Inverter
Hsuan Chang, Chi-Hsin Huang, and Kenji Nomura
ACS Appl. Electron. Mater. (2021)
Recent progress of oxide-TFT-based inverter technology
K. Nomura
Journal of Information Display (2021)
Switching mechanism behind the device operation mode in SnO-TFT
A.W. Lee, Y. Zheng(co-1st author), C.-H. Huang, K. Matsuzaki, and K. Nomura
Advanced electronic Materials (2020)
Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors
H.Chang C.-H. Huang, K. Matsuzaki, and K. Nomura
ACS Appl. Mater. Interfaces (2020).
Resistive switching memory effects in p-type hydrogen-treated CuO nanowire
C.-H. Huang, Y.Tang, K. Matsuzaki, and K. Nomura
Appl. Phys. Lett. 117, 043502 (2020)
Hydrogen Defect Termination in SnO for p-channel-TFTs
Alex W Lee, Dong Le, Kosuke Matsuzaki, and Kenji Nomura
ACS Appl. Electron. Mater.2, 1162-1168 (2020)
Threshold switching of non-stoichiometric CuO nanowire for selector application
Chi-Hsin Huang, Kosuke Matsuzaki, and Kenji Nomura
Appl. Phys. Lett. 116, 023503 (2020).
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