• Thin-film Electronics and Advanced Materials Laboratory

    Working for next generation oxide-ectronics

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  • Material design

    Effective combined experimental and computational approach 

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  • Material synthesis

    High-quality film growth

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  • Material analysis

    High-quality film growth

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  • Device development

    From material to device

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Oxide Electronic Device Technology Based on Novel Material Development for next generation flexible and transparent electronics

 

Material design & synthesis

We develop new electronic materiel for next generation transparent, flexible electronics.

Film growth

Thin film growth of oxides by a variety of growth techniques including PVD, CVD, ALD and low-cost chemical solution process.

Device development

The developing of a variety of electronic devices based on new electronic materiel we develop.

Material and device characterization

Detailed material and device analysis based on the experimental and computational techniques.

LATEST PUBLICATIONS

Switching mechanism behind the device operation mode in SnO-TFT

A.W. Lee, Y. Zheng(co-1st author), C.-H. Huang, K. Matsuzaki, and K. Nomura

Advanced electronic Materials (2020)

Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors

H.Chang C.-H. Huang, K. Matsuzaki, and K. Nomura

ACS Appl. Mater. Interfaces (2020).

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

C.-H. Huang, Y.Tang, K. Matsuzaki, and K. Nomura

Appl. Phys. Lett. 117, 043502 (2020)

Hydrogen Defect Termination in SnO for p-channel-TFTs

Alex W Lee, Dong Le, Kosuke Matsuzaki, and Kenji Nomura

ACS Appl. Electron. Mater.2, 1162-1168 (2020)

Threshold switching of non-stoichiometric CuO nanowire for selector application

Chi-Hsin Huang, Kosuke Matsuzaki, and Kenji Nomura

Appl. Phys. Lett. 116, 023503 (2020).

Electronic Defects in Amorphous Oxide Semiconductors: A Review

Keisuke Ide, Kenji Nomura, Hideo Hosono, and Toshio Kamiya

Phys. Status Solidi A 1800372 (2019)

RECENT EVENTS

Address

Jacobs Hall Room 3602, Engineer Ln, La Jolla, CA 92093

E-mail: kenomura@eng.ucsd.edu

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire