CONFERENCES AND TALKS

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Invited talks

  1. K. Nomura, “Back-channel surface defect for p-channel oxide TFTs”, 2021 the SID International Symposium, USA (2021).

  2. K. Nomura, “p-type oxide TFT development toward oxide CMOS technology”, 2021 International Conference on Display Technology, China (2021).“, 

  3. K. Nomura, “How to improve P-channel Oxide-TFT s“, The 6th International Conference on Advanced Electromaterials (ICAM), (2021).

  4. K. Nomura, “A ultra-thin channel oxide-TFT for next-generation inverter circuit”, 2022 International Conference on Display Technology”, China, July (2022). 

  5. K. Nomura, “Recent advancement of p-channel oxide-TFT toward logic gate technology”, Samsung Form, May,(2022).

  6. K. Nomura, “Recent progress of oxide TFT based inverter technology“, THE 29th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, Kyoto, July (2022).

  7. K. Nomura, “Recent progress of oxide TFT based inverter technology“, 22nd International Meeting on Information Display (IMID)  (2022).

  8. K. Nomura, “Challenges for High-Performance Oxide-TFT Based Inverters”, 242th  ECS meeting TFT 16, Atlanta, US, April  (2022).

  9. K. Nomura, “Recent advances and challenges in Oxide-TFT Inverter technology”, TCM-TOEO 2022, Greece, October  (2022).

  10. K. Nomura, “Cost-effective Low-temperature-processed Oxide-TFTs”, 2022 International Conference on Display Technology, China (2023).

  11. K. Nomura, “Progress of p-channel oxide-TFT development and how we improve the performances”, 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).

  12. K. Nomura, “Recent advancement in Oxide TFT technology “, The 7th GP-MS Symposium, Sendai, Nov 29, 2023  (2023).

  13. K. Nomura, Energy efficient oxide-TFT technology for next-generation electronics”, ICAMD2023, Korea December 5th (2023).

  14. K. Nomura, Recent Progress in  Oxide Thin-Film Transistor Technology”, ITC 2024 , Korea March 27-29, 2024, (2024).

  15. K. Nomura, Oxide-TFT technology for next-generation sustainable electronics“, ISPSA 2024 , Korea June 4th, 2024, (2024).

 

Presentations

  1. H. Chang, and K. Nomura, “Development of high-performance p‑channel oxide-Thin-Film Transistors using Cu2O channel”, CMRR Spring review 2021, UCSD, San Diego, (2021).

  2. Y. Zheng, A. Lee, C.H. Huang, and K. Nomura, ” Control of Transistor Operation Modes for SnO-TFT and Circuit Application”. 63RD ELECTRONIC MATERIALS CONFERENCE June 23-25 (2021).

  3. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory and
    Inhibitory Response enabled by Ambipolar Oxide Transistor “. CMRR Fall review 2021, UCSD, San Diego, (2021)

  4.  Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed 2D Oxide Thin-Film Transistor “. CMRR Spring review 2022, UCSD, San Diego, (2022)

  5. Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed Ultra-Thin ITO-Thin-Film Transistor”. 242th  ECS meeting TFT 16 (2022).

  6. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory an Inhibitory Response enabled by Ambipolar Oxide Transistor “. 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).

  7. Y. Zheng, C.H. Huang, and K. Nomura, “Control of ambipolar operation modes and Complementary Circuit Application in SnO-TFT”. CMRR Fall review 2023, UCSD, San Diego, (2023).

  8. C.H. Huang, and K. Nomura, “Atomically Thin SnO-Based p-Channel Thin-Film Transistor and Low-Power Complementary Inverter”. MRS Fall meeting  (2024).

Invited talks

  1. K. Nomura, “Back-channel surface defect for p-channel oxide TFTs”, 2021 the SID International Symposium, USA (2021).

  2. K. Nomura, “p-type oxide TFT development toward oxide CMOS technology”, 2021 International Conference on Display Technology, China (2021).“, 

  3. K. Nomura, “How to improve P-channel Oxide-TFT s“, The 6th International Conference on Advanced Electromaterials (ICAM), (2021).

  4. K. Nomura, “A ultra-thin channel oxide-TFT for next-generation inverter circuit”, 2022 International Conference on Display Technology”, China, July (2022). 

  5. K. Nomura, “Recent advancement of p-channel oxide-TFT toward logic gate technology”, Samsung Form, May,(2022).

  6. K. Nomura, “Recent progress of oxide TFT based inverter technology“, THE 29th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, Kyoto, July (2022).

  7. K. Nomura, “Recent progress of oxide TFT based inverter technology“, 22nd International Meeting on Information Display (IMID)  (2022).

  8. K. Nomura, “Challenges for High-Performance Oxide-TFT Based Inverters”, 242th  ECS meeting TFT 16, Atlanta, US, April  (2022).

  9. K. Nomura, “Recent advances and challenges in Oxide-TFT Inverter technology”, TCM-TOEO 2022, Greece, October  (2022).

  10. K. Nomura, “Cost-effective Low-temperature-processed Oxide-TFTs”, 2022 International Conference on Display Technology, China (2023).

  11. K. Nomura, “Progress of p-channel oxide-TFT development and how we improve the performances”, 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).

  12. K. Nomura, “Recent advancement in Oxide TFT technology “, The 7th GP-MS Symposium, Sendai, Nov 29, 2023  (2023).

  13. K. Nomura, Energy efficient oxide-TFT technology for next-generation electronics”, ICAMD2023, Korea December 5th (2023).

  14. K. Nomura, Recent Progress in  Oxide Thin-Film Transistor Technology”, ITC 2024 , Korea March 27-29, 2024, (2024).

  15. K. Nomura, Oxide-TFT technology for next-generation sustainable electronics“, ISPSA 2024 , Korea June 4th, 2024, (2024).

 

Presentations

  1. H. Chang, and K. Nomura, “Development of high-performance p‑channel oxide-Thin-Film Transistors using Cu2O channel”, CMRR Spring review 2021, UCSD, San Diego, (2021).

  2. Y. Zheng, A. Lee, C.H. Huang, and K. Nomura, ” Control of Transistor Operation Modes for SnO-TFT and Circuit Application”. 63RD ELECTRONIC MATERIALS CONFERENCE June 23-25 (2021).

  3. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory and
    Inhibitory Response enabled by Ambipolar Oxide Transistor “. CMRR Fall review 2021, UCSD, San Diego, (2021)

  4.  Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed 2D Oxide Thin-Film Transistor “. CMRR Spring review 2022, UCSD, San Diego, (2022)

  5. Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed Ultra-Thin ITO-Thin-Film Transistor”. 242th  ECS meeting TFT 16 (2022).

  6. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory an Inhibitory Response enabled by Ambipolar Oxide Transistor “. 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).

  7. Y. Zheng, C.H. Huang, and K. Nomura, “Control of ambipolar operation modes and Complementary Circuit Application in SnO-TFT”. CMRR Fall review 2023, UCSD, San Diego, (2023).

  8. C.H. Huang, and K. Nomura, MRS Spring 2024.

Invited talks

  1. K. Nomura, “Back-channel surface defect for p-channel oxide TFTs”, 2021 the SID International Symposium, USA (2021).

  2. K. Nomura, “p-type oxide TFT development toward oxide CMOS technology”, 2021 International Conference on Display Technology, China (2021).“, 

  3. K. Nomura, “How to improve P-channel Oxide-TFT s“, The 6th International Conference on Advanced Electromaterials (ICAM), (2021).

  4. K. Nomura, “A ultra-thin channel oxide-TFT for next-generation inverter circuit”, 2022 International Conference on Display Technology”, China, July (2022). 

  5. K. Nomura, “Recent advancement of p-channel oxide-TFT toward logic gate technology”, Samsung Form, May,(2022).

  6. K. Nomura, “Recent progress of oxide TFT based inverter technology“, THE 29th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, Kyoto, July (2022).

  7. K. Nomura, “Recent progress of oxide TFT based inverter technology“, 22nd International Meeting on Information Display (IMID)  (2022).

  8. K. Nomura, “Challenges for High-Performance Oxide-TFT Based Inverters”, 242th  ECS meeting TFT 16, Atlanta, US, April  (2022).

  9. K. Nomura, “Recent advances and challenges in Oxide-TFT Inverter technology”, TCM-TOEO 2022, Greece, October  (2022).

  10. K. Nomura, “Cost-effective Low-temperature-processed Oxide-TFTs”, 2022 International Conference on Display Technology, China (2023).

  11. K. Nomura, “Progress of p-channel oxide-TFT development and how we improve the performances”, 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).

  12. K. Nomura, “Recent advancement in Oxide TFT technology “, The 7th GP-MS Symposium, Sendai, Nov 29, 2023  (2023).

  13. K. Nomura, Energy efficient oxide-TFT technology for next-generation electronics”, ICAMD2023, Korea December 5th (2023).

  14. K. Nomura, Recent Progress in  Oxide Thin-Film Transistor Technology”, ITC 2024 , Korea March 27-29, 2024, (2024).

  15. K. Nomura, Oxide-TFT technology for next-generation sustainable electronics“, ISPSA 2024 , Korea June 4th, 2024, (2024).

 

Presentations

  1. H. Chang, and K. Nomura, “Development of high-performance p‑channel oxide-Thin-Film Transistors using Cu2O channel”, CMRR Spring review 2021, UCSD, San Diego, (2021).

  2. Y. Zheng, A. Lee, C.H. Huang, and K. Nomura, ” Control of Transistor Operation Modes for SnO-TFT and Circuit Application”. 63RD ELECTRONIC MATERIALS CONFERENCE June 23-25 (2021).

  3. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory and
    Inhibitory Response enabled by Ambipolar Oxide Transistor “. CMRR Fall review 2021, UCSD, San Diego, (2021)

  4.  Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed 2D Oxide Thin-Film Transistor “. CMRR Spring review 2022, UCSD, San Diego, (2022)

  5. Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed Ultra-Thin ITO-Thin-Film Transistor”. 242th  ECS meeting TFT 16 (2022).

  6. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory an Inhibitory Response enabled by Ambipolar Oxide Transistor “. 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).

  7. Y. Zheng, C.H. Huang, and K. Nomura, “Control of ambipolar operation modes and Complementary Circuit Application in SnO-TFT”. CMRR Fall review 2023, UCSD, San Diego, (2023).

  8. C.H. Huang, and K. Nomura, MRS Spring 2024.

Invited talks

  1. K. Nomura, “Back-channel surface defect for p-channel oxide TFTs”, 2021 the SID International Symposium, USA (2021).

  2. K. Nomura, “p-type oxide TFT development toward oxide CMOS technology”, 2021 International Conference on Display Technology, China (2021).“, 

  3. K. Nomura, “How to improve P-channel Oxide-TFT s“, The 6th International Conference on Advanced Electromaterials (ICAM), (2021).

  4. K. Nomura, “A ultra-thin channel oxide-TFT for next-generation inverter circuit”, 2022 International Conference on Display Technology”, China, July (2022). 

  5. K. Nomura, “Recent advancement of p-channel oxide-TFT toward logic gate technology”, Samsung Form, May,(2022).

  6. K. Nomura, “Recent progress of oxide TFT based inverter technology“, THE 29th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, Kyoto, July (2022).

  7. K. Nomura, “Recent progress of oxide TFT based inverter technology“, 22nd International Meeting on Information Display (IMID)  (2022).

  8. K. Nomura, “Challenges for High-Performance Oxide-TFT Based Inverters”, 242th  ECS meeting TFT 16, Atlanta, US, April  (2022).

  9. K. Nomura, “Recent advances and challenges in Oxide-TFT Inverter technology”, TCM-TOEO 2022, Greece, October  (2022).

  10. K. Nomura, “Cost-effective Low-temperature-processed Oxide-TFTs”, 2022 International Conference on Display Technology, China (2023).

  11. K. Nomura, “Progress of p-channel oxide-TFT development and how we improve the performances”, 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).

  12. K. Nomura, “Recent advancement in Oxide TFT technology “, The 7th GP-MS Symposium, Sendai, Nov 29, 2023  (2023).

  13. K. Nomura, Energy efficient oxide-TFT technology for next-generation electronics”, ICAMD2023, Korea December 5th (2023).

  14. K. Nomura, Recent Progress in  Oxide Thin-Film Transistor Technology”, ITC 2024 , Korea March 27-29, 2024, (2024).

  15. K. Nomura, Oxide-TFT technology for next-generation sustainable electronics“, ISPSA 2024 , Korea June 4th, 2024, (2024).

 

Presentations

  1. H. Chang, and K. Nomura, “Development of high-performance p‑channel oxide-Thin-Film Transistors using Cu2O channel”, CMRR Spring review 2021, UCSD, San Diego, (2021).

  2. Y. Zheng, A. Lee, C.H. Huang, and K. Nomura, ” Control of Transistor Operation Modes for SnO-TFT and Circuit Application”. 63RD ELECTRONIC MATERIALS CONFERENCE June 23-25 (2021).

  3. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory and
    Inhibitory Response enabled by Ambipolar Oxide Transistor “. CMRR Fall review 2021, UCSD, San Diego, (2021)

  4.  Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed 2D Oxide Thin-Film Transistor “. CMRR Spring review 2022, UCSD, San Diego, (2022)

  5. Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed Ultra-Thin ITO-Thin-Film Transistor”. 242th  ECS meeting TFT 16 (2022).

  6. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory an Inhibitory Response enabled by Ambipolar Oxide Transistor “. 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).

  7. Y. Zheng, C.H. Huang, and K. Nomura, “Control of ambipolar operation modes and Complementary Circuit Application in SnO-TFT”. CMRR Fall review 2023, UCSD, San Diego, (2023).

  8. C.H. Huang, and K. Nomura, MRS Spring 2024.

Invited talks

  1. K.Nomura, “Recent Progress of Oxide-Semiconductor-Based P-channel TFTs”, 2015 SID International Symposium, 39.3, San Jose, USA (2015).

  2. C.H. Huang and A. W Lee, and K. Nomura, “Artificial Neural and Optical-neural Synaptic Device for Neuromorphic Computing“, Qualcomm fellow hip finalist presentation, Qualcomm Headquarter, San Diego, 4/3/2019 (2019) 

  3. K.Nomura, “P-channel Oxide-TFT Technology for Next Generation Flexible Electronics“, The 5th UCSD-NSYSU Bilateral Research Symposium, UCSD, San Diego, 3/20/2019. (2019). 

  4. K.Nomura, “Defect termination for P-channel Oxide-TFT “, Fujiwara seminar (Atami, Japan, Oct. 2019) (2019). 

  5. K.Nomura, Frontier center seminar, Tokyo Institute of Technology (2019). 

  6. K.Nomura, “How We Reduce Subgap Defect toward High-performance P-channel Oxide TFTs“, The 5th ICAE 2019 (Jeju, Korea, Nov. 2019) (2019).

  7. K.Nomura, “Fundamental and Recent Progress in p-Channel Oxide-TFT Development (Tutorial)“, IMID 2020 INTERNATIONAL MEETING ON INFORMATION DISPLAY – ONLINE CONFERENCE (Korea, August 25-28. 2020) (2020). 

  8.  K.Nomura, “Hydrogen defect termination for p-channel SnO-TFT“, IMID 2020 INTERNATIONAL MEETING ON INFORMATION DISPLAY – ONLINE CONFERENCE (Korea, August 25-28. 2020) (2020). 

Presentations

  1. K.Nomura, “Oxide semiconductor for next generation electronics“, CMRR Fall review 2018, UCSD, San Diego, 11/22/2018 (2018). 

  2. C.H. Huang, and K. Nomura, “Metal Oxide Nanowire for Next Generation Electronic Devices“, CMRR spring review 2019, UCSD, San Diego, 3/14/2019 (2019).

  3. C.H. Huang, and K. Nomura, “Resistive Switching Memory Effects in p-Type Cu2O Nanowire”, CMRR Fall review 2019, UCSD, San Diego, 10/18/2019 (2019). 

  4. C.-H. Huang, and K. Nomura, “Gate-tunable memristor using two-dimensional SnOx nanosheet”, 50th IEEE Semiconductor Interface Specialists Conference (SISC), December 12-14/2019 (2019). 

  5. A. W. Lee, and K. Nomura, “Hydrogenated SnO based p-channel TFTs”, CMRR Fall review 2019, UCSD, San Diego, 10/18/2019 (2019). 

  6. A. W. Lee, K. Matsuzaki and K. Nomura, “Hydrogenated SnO for p-channel oxide thin film transistor ”, 2020 SID International Symposium – ONLINE CONFERENCE (August 3-7. 2020) (2020). 

  7. C.-H. Huang, H. Chang, T.-Y. Yang, Y.-C. Wang, Y.-L. Chueh and K. Nomura, 2D-Oxide Memtransistor for Neuromorphic Computing, CMRR Fall review 2020, UCSD, San Diego, 10/29/2019 (2020). 

  8. C.H. Huang, and K. Nomura, “Metal Oxide Nanowire for Next Generation Electronic Devices“, MRS spring meeting (2020). 

Invited talks

  1. Nomura, T. Kamiya, and H. Hosono, “Improvement of TFT characteristics and stability for a-In-Ga-Zn-O –TFT by low-temperature annealing”, The 2010 Mater. Res. Soc. Fall Meeting (MRS2010 Fall meeting), Boston, USA (2010).

  2. Nomura, T. Kamiya, and H. Hosono, “How we can improve TFT characteristics and stability for a-IGZO-TFTs”, The 10th Int. Meeting on Inf. Display (IMID2010), Seoul, Korea (2010).

  3. Nomura, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Defect structure and stabilization of a-In-Ga-Zn-O based TFTs” International workshop on Transparent oxide semiconductors 2010 (TAOS2010), Yokohama, Japan (2010).

  4. Kamiya, K. Nomura, and H. Hosono, “Why is amorphous oxide semiconductor expected for next-generation displays?”, International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE2010) BA02, Jeju, Korea (2010/11/21-24) (2010).

  5. Ohta, K. Sugiura, K. Koumoto, K. Nomura, H. Hiramatsu, M. Hirano and H. Hosono, “Heteroepitaxy of Complex Oxides with Natural Superlattice Structure”, Mater. Res. Soc. Spring Meeting, San Francisco, USA (2010/4/6) (2010).

  6. Yanagi, K. Nomura, H. Hiramatsu, Y. Toda, T. Kamiya, H. Hosono, “Electronic Structures and Energy Band Lineup of Transparent Conducting Materials Studied by Photoelectron Spectroscopy” 12th International Ceramics Congress and the 5th Forum on New Materials (CIMTEC) FI-2:IL26, Montecatini Terme, Italy, (2010/6/13-18) (2010).

  7. Kamiya, K. Nomura, and H. Hosono, “Why amorphous oxide semiconductors have superior performances than amorphous silicon”,12th International Ceramics Congress and the 5th Forum on New Materials (CIMTEC) FI-1:IL11, Montecatini Terme, Italy, (2010/6/13-18) (2010).

  8. Nomura, H. Hosono, “Transparent amorphous oxide semiconductor (TAOS) and display application: Present status”, The 20th Fine tech JAPA, Tokyo (20104/16) (2010).

  9. Nomura, “Oxide semiconductor technology (II) TFT stability:”, an open seminar for Samsung Electronics Co. Ltd, Giheung, Korea (2011).

  10. Nomura, T. Kamiya, and H. Hosono, “Bias stability for a-In-Ga-Zn-O-TFTs: Origin of threshold voltage instability and the role of thermal annealing and passivation”, 18th International Display Workshops (IDW ’11), Nagoya, Japan.

  11. Nomura, “Material property of amorphous oxide semiconductor and TFT application”, an open seminar for Qualcomm Incorporated, San Jose, US (2011).

  12. Nomura, “Transparent amorphous oxide semiconductor and their TFT applications”, an open seminar for BOE technology group co. Ltd, Beijing, China (2011).

  13. Nomura, “TFT characteristics and bias stability for a-IGZO TFTs”, an open seminar for Chimei Innolux Corporation, Taipei City, Taiwan (2011).

  14. Nomura, T. Kamiya, and H. Hosono, “How we improve TFT characteristics and stability for oxide based TFTs”, Display Taiwan 2011 Business & Technology Forum, Taipei City, Taiwan (2011).

  15. Nomura, T. Kamiya, and H. Hosono, “Improvement of bias-light illumination stability for a-In-Ga-Zn-O TFTs: Interface, bulk and back channel effects”, The International TFT Conference 2011 (ITC 2011), Cambridge, UK (2011).

  16. Kamiya, K. Nomura and H. Hosono, “Defects and impurities in amorphous oxide semiconductors probed by photo response spectroscopy”, International Workshop on Flexible & Printable Electronics (IWFPE), Muju, Korea (2011/11/16-18) (2011).

  17. Kamiya, K. Nomura, and H. Hosono, “Carrier transport specific to ionic semiconductors”, The 18th International Workshop on Active-Matrix Flat panel Display and Devices -TFT Technologies and FPD Materials, S1-1, Kyoto, Japan (2011/7/11-13) (2011).

  18. Kamiya, K. Nomura and H. Hosono, “Carrier transport, defects and impurities in amorphous oxide semiconductor”, NIMS-UR1 Workshop, Rennes, France (2011/5/15-17) (2011)..

  19. Nomura, “Material properties for amorphous oxide semiconductor and device application”, an open seminar for Asahi glass Co. Ltd., Kanagawa (2011).

  20. Nomura, “Material design for amorphous oxide semiconductor and device application”, Jyohokikou seminar, Tokyo metropolitan small and medium enterprise support center, Tokyo (2011).

  21. Nomura, K. Lee, T. Kamiya, and H. Hosono, “Electronic structure of oxide semiconductor and application to solar cell”, The 3th solar cell seminar, Rafre Saitama, Saitama (2011).

  22. Nomura, and H. Hosono, “TAOS-TFTs: History and recent advances”, The 21th Fine tech Japan, Tokyo bigsite, Tokyo (2011).

  23. Nomura, “Improvement of TFT stability for oxide based TFTs”, Tech-Zone seminar, Kawasaki- city kyouiku bunka kaikan, Kanagawa (2011).

  24. Kamiya, K. Nomura, H. Hosono, “Characteristics of oxide semiconductor and device application”, JACI seminar, JACI meeting room, Tokyo (2011/12/20) (2011).

  25. Kamiya, K. Nomura, H. Hosono, “Oxide TFT materials toward flexible electronics: Present status and issue”, the meeting of oyoudensibusei bunkakai, Tokyo (2011/11/9) (2011).

  26. Nomura, T. Kamiya, and H. Hosono, “Recent progress in oxide based p-channel TFT and complementary inverter”, The 12th International Meeting on Information Display (IMID 12), Daegu, Korea (2012).

  27. Kamiya, K. Nomura, and H. Hosono, “Amorphous oxide thin film transistor: history and future applications”, The 2nd International Conference on Electronic Materials and Nanotechnology for Green Environment, Jeju, Korea (2012).

  28. Kamiya, K. Nomura, and H. Hosono, “Recent progress on transparent amorphous oxide semiconductor (TAOS) for flexible display applications”, The 9th International Conference on Coatings on Glass and Plastics (ICCG9), Breda, The Netherlands (2012).

  29. Kamiya, K. Nomura, H. Hosono, “Present Status, Knowledge and Issues of Oxide Semiconductor Technology”, International Display Workshops (IDW/AD’12), Kyoto Japan (2012)

  30. Kamiya, K. Nomura and H. Hosono, “Effects of annealing temperature on structure, defects, and stability of amorphous In-Ga-Zn-O”, The 14th International Workshop on Flexible & Printable Electronics (IWFPE2012) Jeollabuk-do, Korea (2012).

  31. Kamiya, K. Nomura, and H. Hosono, “Impurity and Defects in Amorphous In-Ga-Zn-O”, IMID 2012 Workshop, Seoul, Korea, (2012).

  32. Kamiya, K. Nomura, and H. Hosono, “Amorphous oxide technology: What have been clarified, what should be known?”, 2nd International Symposium on Transparent Conductive Coatings: Solar and Display Applications (ISTC 2012) Seoul, Korea, (2012).

  33. Kamiya, K. Nomura, and H. Hosono, “Amorphous oxide semiconductors: History, present status, and unrevealed secrets”, International Union of Materials Research Society – International Conference in Asia 2012 (IUMRS-ICA 2012), Busan, Korea (2012).

  34. Kamiya, K. Nomura, and H. Hosono, “Origins of TFT characteristics and instability specific to a-IGZO TFT”, Int. Workshop Organic Electronics, Seoul, Korea (2012).

  35. Nomura, and H. Hosono, “Functional oxide thin film and electric device application”, Materials Science Society of Japan, Tokyo, Japan (2012).

  36. Nomura, “Present Status and Open Issues of Amorphous Oxide Semiconductor TFT technology”, IEEE Photonics conference 2013(IPC 2013), Seattle, US (2013).

  37. Nomura, “Atomic structure, electronic structure, and structural relaxation of transparent amorphous oxide semiconductor, In-Ga-Zn-O”, The 10th Pacific Rim Conference on Ceramic and Glass Technology (PACRIM10), San Diego, US, (2013/6/4) (2013).

  38. Kamiya, K. Nomura, and H. Hosono, “Electronic structure, carrier transport, defects and impurities in amorphous oxide semiconductor’, SID 2013, Vancouver, Canada (2013).

  39. Kamiya, K. Nomura, and H. Hosono, “Electrical property of IGZO based oxide semiconductor transistor” The 18th meeting, gate stack Research Association, 103-106, Kanagawa, Japan (2013).

  40. Kamiya, K. Nomura, and H. Hosono, “Annealing effect and in-situ observation of crystallization for In-Ga-Zn-O thin films”, The JPS 166th Committee on photonic and electronic oxide, the 58th meetings, Tokyo, Japan (2013).

  41. Kamiya, K. Ide, K. Nomura, H. Kumomi, and H. Hosono, “Structural Relaxation, Crystallization, and Defect Passivation in Amorphous In-Ga-Zn-O; International Display Workshop 2013 (IDW’13), Sapporo, Japan (2013).

 

Presentations

  1. Hosono, K. Nomura, and T. Kamiya, “A Bipolar Oxide TFT” (Late News Paper), The 49th SID Display Week, Los Angeles, US (2011/5/17).

  2. Kamiya, N. Kobayashi, K. Nomura, and H. Hosono, “Fabrication and characteristics of short-channel a-IGZO TFTs”, Visual-JW2011, Osaka, Japan (2010/11/11-12).

  3. Kamiya, K. Nomura, and H. Hosono, “Defect states in amorphous oxide semiconductor, a-InGaZnO4: Formation energies, cation deficiencies, and anion/cation anti-site linkages”, The 37th International Symposium on Compound Semiconductors (ISCS2010), TuD1-5, Kagawa, Japan (2010/5/31-6/4).

  4. Nomura, T. Kamiya, and H. Hosono, “Influence of metastable chemical bonds on current-bias instability of a-In-Ga-Zn-O TFTs”, The 37th International Symposium on Compound Semiconductors (ISCS2010), TuD1-3, Kagawa, Japan (2010/5/31-6/4).

  5. H. Lee, K. Nomura, T. Kamiya, and H. Hosono, “Diffusion-limited Schottky contact made of amorphous oxide semiconductor, a-In-Ga-Zn-O, and Pt”, 4th International Conference on Science and Technology for Advanced Ceramics (STAC-4), Yokohama, Japan (2010/6/21-23).

  6. Nomura, T. Kamiya, and H. Hosono, “Effect of channel and interface defect on bias stability in a-IGZO TFT”, The 71th JSAP Fall Meeting, 16a-ZJ-6, Nagasaki (2010/9/14-9/17).

  7. Lee, K. Nomura, H. Yanagi, T. Kamiya, and H. Hosono, “Photovoltaic property of n-type a-In-Ga-Zn-O / p-type c-Si heterojunction Solar cell”, The 71th JSAP Fall Meeting, 16a-ZJ-7, Nagasaki (2010/9/14-9/17).

  8. Kabayashi, K. Nomura, T. Kamiya, and H. Hosono, “Fabrication and characterization of short channel a-In-Ga-Zn-O TFT”, The 7th Thin Film Materials & Devices Meeting, 6P32, Nara (2010/11/5-6).

  9. Shao, K. Nomura, T. Kamiya, and H. Hosono, “Initial film growth and TFT characteristics for very thin a-In-Ga-Zn-O-TFT”, The 7th Thin Film Materials & Devices Meeting, 6O01, Nara (2010/11/5-6).

  10. Kikuchi, K. Nomura, K. Ide, T. Kamiya, and H. Hosono, “Improvement of TFT characteristics a-In-Ga-Zn-O TFT by low temperature annealing”, The 7th Thin Film Materials & Devices Meeting, 5P31, Nara (2010/11/5-6).

  11. H. Lee, K. Nomura, T. Kamiya, and H. Hosono, “Schottky junction of amorphous oxide semiconductor and Pt metal”, The 7th Thin Film Materials & Devices Meeting, 6P40, Nara (2010/11/5-6).

  12. Ohta, Y. Sato, T. Kato, S. W. Kim, K. Nomura, Y. Ikuhara, and H. Hosono,” Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal”, The 57th JSAP Spring Meeting, 19p-TQ-17, Kanagawa (2010/3/17~20).

  13. Nakanishi, T. Hasegawa, M. Sakami, M. Kimura, K. Nomura, T. Kamiya, H. Hosono, and T. Aoki, “Characterization of CTFT inverter using amorphous oxide and polymer”, The 57th JSAP Spring Meeting, 17a-TL-10, Kanagawa (2010/3/17~20).

  14. Nomura, Y. Kikuchi, K. Ide, T. Kamiya, and H. Hosono, “Roles of Excess Hydrogen and Oxygen in Amorphous IGZO”, The 24th International Conference on Amorphous and Nanocrystalline Semiconductors, 2B2-1, Nara, Japan (2011/8/22-26).

  15. Nomura, T. Kamiya, and H. Hosono, “Visible-light blind, stable a-In-Ga-Zn-O thin-film transistors”, The 7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-7) 16p-O004, Tokyo, Japan (2011/ 4/14-15).

  16. K Lee, Nomura, H. Yanagi, T. Kamiya, and H. Hosono, “Photovoltaic properties of n-type a-In-Ga-Zn-O / p-type c-Si heterojunction solar cells”, The 7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-7), 14p-P060, Tokyo, Japan (2011/ 4/14-15).

  17. H. Lee, K. Nomura, T. Kamiya, and H. Hosono, “Amorphous In-Ga-Zn-O-based Metal-Semiconductor Field-Effect Transistors by Schottky contact made of bottom Pt electrode”, TOEO-7, 15p-P132, Tokyo, Japan (2011/ 4/14-15).

  18. Ohta, Y. Sato, T. Kato, S.W. Kim, K. Nomura, Y. Ikuhara, and H. Hosono, “Field-Induced Water Electrolysis Switches SrTiO3 from an Insulator to a 2D-Metal exhibiting Gigantic Thermopower”, TOEO-7, 16p-O006, Tokyo, Japan (2011/ 4/14-15).

  19. Lee, K. Nomura, H. Yanagi, T. Kamiya, and H. Hosono, “Growh of Highly-Oriented, High Mobility Cu2O for Heterojunction Amorphous-IGZO/Cu2O Solar Cell”, ICANS24, 4C2-4, Nara, Japan (2011/8/22-26).

  20. Kamiya, K. Nomura, K. Abe, and H. Hosono, “Device Physics of Amorphous In-Ga-Zn-O”, ICANS24, 3B2-3, Nara, Japan (2011/8/22-26).

  21. Ide, K. Nomura, T. Kamiya, and H. Hosono, “Structural Relaxation and Glass Transition in Amorphous Oxide Semiconductor, a-In-Ga-Zn-O”, ICANS24, 1B2-1, Nara, Japan (2011/8/22-26).

  22. Ide, Y. Kikuchi, K. Nomura, T. Kamiya and H. Hosono, “Oversaturated oxygen and operation characteristics of a-In-Ga-Zn-O TFTs”, TOEO-7, 14p-O003, Tokyo, Japan (2011/ 4/14-15).

  23. Abe, A. Sato, K. Takahashi, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Operation Model with Carrier-Density Dependent Mobility for Amorphous In-Ga-Zn-O Thin-Film Transistors”, TOEO-7, 14p-P065, Tokyo, Japan (2011/ 4/14-15).

  24. Kamiya, Y. Kikuchi, K. Ide, K. Nomura, and H. Hosono, “Effects of Low-Temperature Annealing and Deep Traps in Operation Characteristics of Amorphous In-Ga-Zn-O Thin-Film Transistors”, The American Vacuum Society Symposium, TC+EM+NS-ThA10, Nashville, USA (2011/10/30-11/4).

  25. Ide, K. Nomura, T. Kamiya, and H. Hosono, “Why Optimum Oxygen Pressure Range Exists for Fabricating Amorphous In-Ga-Zn-O Thin-Film Transistor and How it Should be Optimized”, The American Vacuum Society Symposium, TC+EM+NS-ThA9, Nashville, USA (2011/10/30-11/4).

  26. H. Lee, K. Nomura, T. Kamiya, and H. Hosono, “Photo response of Amorphous In-Ga-Zn-O / Pt Schottky Junction”, The American Vacuum Society Symposium, TC+EM+NS-ThA3, Nashville, USA (2011/10/30-11/4).

  27. Yamada, K. Nomura, S. Takeda, and H. Hosono, “Novel approach for preventing atmosphere effects on Vth stability of a-In-Ga-Zn-O thin film transistor by glass sealing”, The 18th International Display Workshop (IDW’11), AMD6-5L, Nagoya, Japan (2011/12/7-9).

  28. Shao, K. Nomura, T. Kamiya, and H. Hosono, “Optimization of p-Type Oxide Thin-Film Transistors Using Cu2O Channels”, The 18th International Workshop on Active- Matrix Flat panel Displays and Devices (AM-FPD 11), P-16, Kyoto, Japan (2011/7/11-13).

  29. Kamiya, K. Nomura and H. Hosono, “Peculiar electrical properties and local structures in amorphous oxide semiconductor, a-In-Ga-Zn-O”, The 5th Int. Conf. Sci. Technol. for Advanced Ceramics (STAC5) –The 2nd Int. Conf. Advanced Materials Development and Integration (AMDI2), Yokohama, JAPAN (2011/7/22-24).

  30. Nomura, T. Kamiya, and H. Hosono, “Oxygen and Hydrogen diffusion in amorphous oxide semiconductor a-In-Ga-Zn-O”, The 8th Thin Film Materials & Devices Meeting, 4O04, Kyoto（2011/11/4-5).

  31. Nomura, T. Kamiya, and H. Hosono, “Ambipolar Transistor using poly-crystalline SnO channel”, The 72th JSAP Fall Meeting, 1a-N-1, Yamagata（2011/8/29-9/2).

  32. Nomura, T. Kamiya, and H. Hosono, “Role of excess oxygen in amorphous oxide semiconductor In-Ga-Zn-O”, The 72th JSAP Fall Meeting, 1a-N-11, Yamagata (2011/8/29-9/2).

  33. Kobayashi, K. Nomura, T. Kamiya, and H. Hosono, “Fabrication and characterization of short channel a-In-Ga-Zn-O TFT”, The 49th basic science division of The Ceramic Society of Japan, 1D23, Okayama (2011/1/11~12).

  34. Ohta, T. Mizuno, S. Zheng, T. Kato, Y. Ikuhara, K. Abe, H. Kumomi, K. Nomura, and H. Hosono, “Unusually Large Enhancement of Thermopower in an Electric Field Induced Two-Dimensional Electron Gas”,  The 72th JSAP Fall Meeting,  30a-F-7, Yamagata (2011/8/29-9/2).

  35. Ohta, T. Mizuno,  S. Zheng,  T. Kato, Y. Ikuhara, K. Abe, H. Kumomi,  K. Nomura, and H. Hosono, ”Formation of Two-Dimensional Electron Gas using water in nano pore and Thermopower modulation”, The 149th The Japan Institute of metals Fall Meeting, S1・3, Okinawa（2011/11/7-11/9）.

  36. Mizuno, S. Zheng,  T. Kato, Y. Ikuhara, K. Abe, H. Kumomi,  K. Nomura,  H. Hosono, and H. Ohta,  “Unusually Large Enhancement of Thermopower in an Electric Field Induced Two-Dimensional Electron Gas in SrTiO3”, The 8th Thin Film Materials & Devices Meeting, 4O02, Kyoto (2011/11/4-5).

  37. Abe, K. Takahash, A. Sato, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Operation model and electrical characteristics for amorphous a-In-Ga-Zn-O based dual gate TFT”, The 8th Thin Film Materials & Devices Meeting, 4P41, Kyoto (2011/11/4-5).

  38. Ide, Y. Kikuchi, T. Kamiya, K. Nomura, M. Kimura, and H. Hosono, “Excess oxygen related defect in amorphous oxide semiconductor a-In-Ga-Zn-O and their TFT characteristics”, The 72th JSAP Fall Meeting, 1a-N-10, Yamagata（2011/8/29-9/2).

  39. Kamiya, K. Nomura, and H. Hosono, “Amorphous oxide semiconductor from the viewpoint of glass”, The 49th basic science division of The Ceramic Society of Japan, 1C12, Okayama (2011/1/11~12).

  40. Kamiya, K. Nomura, and H. Hosono, “Electronic structures of impurities in amorphous In-Ga-Zn-O”, Materials Research Society Fall Meeting & Exhibits, Z12.09, Boston, USA (2012)

  41. Miyase, K. Domen, K. Nomura, T. Kamiya, and H. Hosono, “Effects of hydrogen in amorphous In-Ga-Zn-O TFTs examined by ultrahigh vacuum sputtering”, Materials Research Society Fall Meeting & Exhibits, Z9.20, Boston, USA (2012).

  42. Fukai, T. Sasaki, H. Kawarada, K. Nomura, T. Kamiya, and H. Hosono, “Short-Channel a-IGZO Thin Film Transistors with Very Thin Gate Insulator and Self-Alignment Ar plasma Process”, The 5th International Symposium on Designing, Processing and Properties of Advanced Engineering Materials and The 3rd International Symposium on Advanced Materials Development and Integration of Novel Structural Metallic and Inorganic Materials (ISAEM-2012/AMDI-3), P7-33 Toyohashi, Japan (2012).

  43. Xiao, K. Nomura, T. Kamiya, and H. Hosono, “Apparent High Mobility ~30 cm2/Vs of Amorphous In-Ga-Zn-O Thin-Film Transistor and Its Origin”, The 6th International Conference on the Science and Technology for Advanced Ceramics (STAC-6), 1P-O-P97, Yokohama (2012).

  44. Mizuno, K. Nomura, H. Hosono, and H. Ohta, “Thermopower modulation of water electrolysis induced 2DEG in oxide semiconductors”, The 59th The Japan Society of Applied Physics (JSAP) Spring Meeting, 18p-F6-7, Tokyo (2012/3/18).

  45. Miyase, K. Nomura, T. Kamiya, and H. Hosono, “High temperature carrier transport and origin of its instability in a-IGZO”, The 59th JSAP Spring Meeting, 17p-E4-21, Tokyo (2012/3/18)

  46. Abe, K. Nomura, T. Kamiya, and H. Hosono, “Optical properties of amorphous oxide semiconductor superlattices”, The 59th JSAP Spring Meeting, 17p-E8-21, Tokyo (2012/3/18).

  47. Kamiya, K. Ide, K. Nomura, and H. Hosono, “Changes of structure, defects and TFT characteristics of amorphous oxide semiconductor, a-IGZO, by thermal annealing”, The 59th JSAP Spring Meeting, 17p-E4-20, Tokyo (2012/3/18).

  48. Hasegawa, M. Kimura, K. Nomura, T. Kamiya, and H. Hosono, “Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing”, The 9th Thin Film Materials & Devices Meeting, 3P30, Kyoto (2012/11/2).

  49. Abe, K. Nomura, T. Kamiya, and H. Hosono, “Thin Film transistor using amorphous oxide semiconductor super lattice”, The 73th JSAP Fall Meeting, 13a-H7-6, Ehime (2012/9/14).

  50. Watanabe, D.-H. Lee, I. Sakaguchi, K. Nomura, T. Kamiya, H. Hosono, and N. Ohashi, “ Response of Amorphous In-Ga-Zn-O to Humid Air”, International Symposium on Eco Topia Science 2013 (ISETS2013) and The 4th International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-4), TuB4-4, Nagoya , Japan (2013).

  51. Fukai, T. Sasaki, H. Kawarada, K. Nomura, T. Kamiya, and H. Hosono, “Operation Characteristics of Short-Channel a-IGZO Thin Film Transistors with Very Thin Gate Insulator;”, The 40th Int. Symp. Comp. Semicond. (ISCS2013), Kobe, Japan (2013).

  52. Fukai, T. Sasaki, H. Kawarada, K. Nomura, T. Kamiya, and H. Hosono, “Short Channel Characteristics of a-IGZO Thin Film Transistors Using Very Thin Gate Insulator”, International Symposium on EcoTopia Science 2013 (ISETS2013) and The 4th International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-4), P-10-79, Nagoya, Japan (2013).

  53. Hasegawa, M. Inoue, T. Matsuda, M. Kimura, K. Nomura, T. Kamiya, and H. Hosono, “3-D Stacked Complementary TFT Devices Using n-Type a-IGZO and p-Type F8T2 TFTs – Comparison between Stacked and Sided Configurations”, International Display Workshop 2013 (IDW’13) AMD6-3L, Sapporo, Japan (2013).

  54. Kamiya, T. Miyase, K. Watanabe, I. Sakaguchi, N. Ohashi, K. Domen, K. Nomura, H. Kumomi, and H. Hosono, “Roles of hydrogen in amorphous oxide semiconductor”, 2nd International Symposium on Inorganic and Environmental Materials (ISIEM2013), Rennes, France, D1-4-1 (2013).

  55. Kamiya, T. Miyase, K. Watanabe, I. Sakaguchi, N. Ohashi, K. Domen, K. Nomura, H. Kumomi, and H. Hosono, “Roles of hydrogen on atomic and defect structures in amorphous oxide semiconductor, a-IGZO”, The 12th Asia Pacific Physics Conference(APPC12), A4-PTu-1, Chiba, JAPAN (2013/7/14).

  56. Kamiya, T. Miyase, K. Watanabe, I. Sakaguchi, N. Ohashi, K. Domen, K. Nomura, and H. Hosono, “Enhancement of Structural Relaxation and Chemical Bonding Weakening by Hydrogen in Amorphous Oxide Semiconductor”, The 7th International Conference on the Science and Technology of Advanced Ceramics (STAC-7), 3A-03, Yokohama, JAPAN(2013)

  57. Kimura, T. Hasegawa, and M. Inoue, K. Nomura, T. Kamiya, and H. Hosono, “3-D Stacked Complementary TFT Devices using n-type a-IGZO and p-type F8T2 TFTs– Operation Confirmation of NOT and NAND Logic Circuits –”, SID 2013, P-3, Vancouver, CANADA, (2013).

  58. Watanabe, D. Lee, I. Sakaguchi, K. Nomura, T. Kamiya, H. Hosono, and N. Ohashi, ”Hydrogen Incorporation and Migration in a-In-Ga-Zn-O Annealed in Humid Air”, 8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-8), 14pP18, Tokyo, Japan(2013).

  59. Orui, D. H. Lee, K. Nomura, H. Hosono, and T. Kamiya, “Effect of Back Pressure and Hydrogen on Operation Characteristics of a-IGZO/Pt Schottky Diodes”, 8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-8), 13pP27, Tokyo, Japan (2013).

  60. Fukai, T. Sasaki, H. Kawarada, K. Nomura, T. Kamiya, and H. Hosono, “Short-Channel a-IGZO Thin Film Transistors Using Very Thin Gate Insulator”, 8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-8), 13pP26, Tokyo, Japan (2013).

  61. Habu, K. Abe, K. Domen, K. Nomura, T. Kamiya, and H. Hosono, “TFT characteristics and the influence of hydrogen in In-Ga-Zn-O TFT”, The 60th The Japan Society of Applied Physics (JSAP) Spring Meeting, 29p-G19-13, Kanagawa (2012/3/27).

  62. Kamiya, T. Miyase, K. Domen, K. Nomura, and H. Hosono, “Electrical property and TFT characteristics in hydrogen reseeded In-Ga-Zn-O”, The 60th The Japan Society of Applied Physics (JSAP) Spring Meeting, 29p-G19-12, Kanagawa (2012/3/27).

  63. Kamiya, K. Nomura, and H. Hosono, “Hydrogen and oxygen impurity in amorphous oxide semiconductor”, The 51th basic science division of The Ceramic Society of Japan, 2B16, Kanagawa (2012/1/9).

  64. Kimura, T. Hasegawa, T. Matsuda, K. Ide, K. Nomura, T. Kamiya, and H. Hosono, “Light Irradiation and Applied Voltage History Sensors Using Amorphous In-Ga-Zn-O Thin- Film Transistors Exposed to Ozone Annealing and Fabricated under High Oxygen Pressure” The Twenty-First International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES – TFT Technologies and FPD Materials (AM-FPD14), 5-3, (2014).

  65. Orui, D. H. Lee, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono, and T. Kamiya, “Effect of Back Pressure and Hydrogen on Operation Characteristics of a-IGZO/Pt Schottky Diodes”, The 52th basic science division of The Ceramic Society of Japan, 2D20, Aichi, Japan (2014).

Invited talks

  1. Nomura, T. Kamiya, and H. Hosono, “Transparent oxide semiconductor based TFT and flexible display”, TFT technology committee meeting, Tokyo Electron Limited. Tokyo, (2005).

  2. H.Hosono, T. Kamiya, K. Nomura, “Transparent transistor using ZnO based semiconductor”, the meeting of oyoudensibusei bunkakai, Tokyo (2005).

  3. Kamiya, K. Nomura, H. Hosono, “Transparent flexible transistor using amorphous oxide semiconductor”, The JPS 131th Committee on photonic and electronic oxide, the 228th meetings, Ishikawa (2005).

  4. Kamiya, K. Nomura, H. Hosono, “Transparent flexible transistor using amorphous oxide semiconductor fabricated at room temperature”, The JPS 147th Committee on amorphous and nano material, the 88th meetings, Osaka (2005).

  5. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano and H. Hosono, “Carrier transport of extended and localized states in InGaO3(ZnO)5”, Mater. Res. Soc. Symp. Spring Meeting (2004 MRS), Graduate Student Gold Award, San Francisco, USA, (2004/4/12-16).

  6. Nomura, T. Kamiya, and H. Hosono, “High performance transparent flexible transistor using amorphous oxide semiconductor”, The JPS 166th Committee on photonic and electronic oxide, the 30th meetings, Tokyo (2005).

  7. Nomura, T. Kamiya, and H. Hosono, “Material exploration of amorphous oxide semiconductor for high-performance flexible TFT and the performance of the TFT”, The 32th Amorphous seminar, Tsukuba (2005).

  8. Kamiya, K. Nomura and H. Hosono, “ZnO-based transparent complex oxide semiconductor for large-mobility flexible thin film transistor”, 3rd International Conference on Materials for Advanced Technologies (ICMAT2005), Singapore, Singapore (2005/7/3-8).

  9. Hosono, K. Nomura, and T. Kamiya, “Ionic Amorphous Oxide Semiconductors”, The 8th International Conference on Laser Ablation (COLA05), Banff, Canada, (2005/9/11-16).

  10. Hosono, T. Kamiya, and K. Nomura, “Transparent High Performance FET Using Amorphous Oxide Semiconductors”, The 12th International Workshop on Active-Matrix Liquid-Crystal Displays -TFT Technologies and Related Materials- (AM-LCD’05), Kanazawa, Japan (2005/7/6-8).

  11. Nomura, “Transparent oxide semiconductors based electronic device”, an open seminar in AT&T Bell Lab, New Jersey, USA (2005).

  12. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Transparent flexible transistor using amorphous oxide semiconductors”, The 2005 Mater. Res. Soc. Fall Meeting (MRS2005 Fall meeting), Boston, USA(2005).

  13. Ohta, S-W. Kim, K. Nomura, S. Ohta, T. Nomura, M. Hirano, H. Hosono, and K. Koumoto, “Giant Seebeck effect originating from 2DEG at the TiO2/SrTiO3 heterointerface”, 2005 Mater. Res. Soc. Fall Meeting, Boston, MA, USA (2005/11/28-12/2).

  14. Hosono, K. Nomura, T. Kamiya, “High performance flexible transistor using transparent amorphous oxide semiconductor” The 12th International Display Workshop, Takamatsu, Japan (2005/126-9) .

  15. Hosono, T. Kamiya, and K. Nomura, “Transparent amorphous and crystalline oxide semiconductors in the system In-Ga-Zn-O”, Europa-Park Rust, Germany, (2005/9/18-22) .

  16. Hosono, K. Nomura, and T. Kamiya, “Ionic Amorphous Oxide Semiconductors”, The 8th International Conference on Laser Ablation (COLA05), Banff, Canada, (2005/9/11-16) (2006).

  17. Nomura, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono,”Materials exploration of amorphous oxide semiconductor for TFT and their device performances”, International symposium on Transparent oxide semiconductors 2006 (TAOS2006), Yokohama, Japan (2006).

  18. Nomura, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Growth of single-crystalline thin films of homologous series oxide semiconductors by reactive solid-phase epitaxy”, The Korean Association of Crystal Growth (KACG) Fall Meeting, Seoul, Korea (2006).

  19. Nomura, “Transparent flexible transistor using amorphous oxide semiconductor”, an open seminar for Sungkyunkwan University, Seoul, Korea (2006).

  20. Kamiya, K. Nomura, and H. Hosono, “Recent progress in amorphous oxide semiconductors and thin film transistors” Electrochemical Society (ECS) 8th Thin Film Transistor Technology (TFTT VIII) symposium, Cancun, Mexico, (2006/10/29-11/3) (2006).

  21. Nomura, “High performance oxide based transistors”, an open seminar for Nagoya University, Nagoya University, Nagoya (2006).

  22. Hosono, K. Nomura and T. Kamiya, “Transparent Amorphous Oxide　Semiconductors for High Performance TFT’s”, The SID International Symposium Seminar, and Exhibition (SID 2007), Long Beach, CA, USA. (2007/5/21-25) (2007).

  23. Hosono, T. Kamiya, and K. Nomura, “Recent Advances in TAOS-TFT”, 7th International Meeting on Information Display (IMID 2007), Daegu, South Korea (2007/8/27-31) (2007).

  24. Abe, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous In-Ga-Zn-O based TFTs and Circuits”, The 14th International Display Workshop (IDW’07), AMD9-2, Sapporo, Japan (2007/12/5-7) (2007).

  25. Kamiya, K. Nomura and H. Hosono, “The Present Status of Amorphous Oxide Semiconductors: Carrier Transport, Electronic Structure, and Device Applications”, International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan (2007/10/15-17) (2007).

  26. Kamiya, K. Nomura, and H. Hosono, “Oxide Semiconductors for Low-T TFTs: Fabrication, Transport properties, electronic structures and device characteristics” 2007 The Fourteenth International Workshop on Active-Matrix Flat panel Displays and Devices -TFT Technologies and Related Materials (AM-FPD07), Hyogo, Japan (2007/7/11-13) (2007).

  27. Kamiya, K. Nomura and H. Hosono, “Carrier transport, structure, defect and doping in amorphous oxide semiconductors” LGE Seminar, Seoul, South Korea, (2007/06/22) (2007).

  28. Kamiya, K. Nomura and H. Hosono, “Characteristic properties of amorphous oxide semiconductors and present issues”, ETRI Seminar, Daejeon, South Korea, (2007/06/20) (2007).

  29. Kamiya, K. Nomura and H. Hosono, “Recent progress in amorphous oxide semiconductor: From structure, carrier transport to TFT performance”, Oxide TFT Workshop, Daejeon, Korea, 2007/6/21) (2007).

  30. Kumomi, K. Nomura, T. Kamiya, H. Hirano, and H. Hosono, “Uniformity and integrated circuits of amorphous oxide channel TFTs”, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-6-6, Strasbourg, France, (2007/5/28/-6/1) (2007).

  31. Nomura, T. Kamiya, and H. Hosono, “Thin film fabrication using amorphous oxide semiconductor and their applications”, Waseda university nanotechnology forum – The 29th nano-structural system-, Waseda University, Tokyo (2007).

  32. Hayashi, A. Sato, M. Ofuji, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Improved Amorphous In-Ga-Zn-O TFTs”, The SID International Symposium Seminar, and Exhibition (SID2008), 42.1, Los Angeles, USA (2008/5/18-23) (2008).

  33. Kamiya, K. Nomura, and H. Hosono, “Electronic Structure, Doping, Defects, and Carrier Transport in Amorphous Oxide Semiconductors: Recent Progress”, Third International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA08), 6-9, Edmonton, Alberta, Canada (2008/7/20-25) (2008).

  34. Nomura, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Defect structure and stabilization of a-In-Ga-Zn-O based TFTs”, 4th Oxide TFT Workshop, Taejon, Korea (2009).

  35. Nomura, “Improvement of device characteristics and stabilization of a-In-Ga-Zn-O based TFTs”, an open seminar for Electronics and Telecommunications Research Institute (ETRI), Taejon, Korea (2009).

  36. Kamiya, K. Nomura, and H. Hosono, “Impact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor”, The 16th Int. Display Workshop, AMD7-1, Miyazaki, Japan (2009/12/9-11) (2009).

  37. Kamiya, K. Nomura and H. Hosono, “Defects and doping in amorphous oxide semiconductor studied by first-principles calculations”, The 26th Int. Japan-Korea Seminar on Ceramics, 2B-I 1, Tsukuba, Japan (2009/11/24-26) (2009).

  38. Kamiya, K. Nomura, and H. Hosono, “Amorphous oxide semiconductor: Factors determining TFT performance and stability”, The 9th Int. Meeting on Inf. Display (IMID2009), 32-2 Seoul, Korea (2009/10/12-1) (2009).

  39. Nomura, T. Kamiya, and H. Hosono, “Amorphous oxide semiconductors and their TFT applications”, an open seminar for Nara Institute of Science and Technology, Nara Institute of Science and Technology, Nara (2009).

  40. Nomura, and H. Hosono, “Electronic structure analysis for transparent oxide semiconductors by hard X-ray photoemission spectroscopy”, Priority nanotechnology support program review committee meeting, Japan Synchrotron Radiation Research Institute, Hyogo (2009)

 

Presentations

  1. Matsuzaki, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of thin film field-effect transistor using deep-UV transparent oxide semiconductor Ga2O3”, The 6th Pacific Rim Conference on Ceramic and Glass Technology (PacRim6), Maui, Hawaii (2005/9/11-16).

  2. Sugiura, H. Ohta, K. Nomura, H. Yanagi, M. Hirano, H. Hosono, and K. Koumoto, “High-quality epitaxial film growth of superconducting sodium-cobalt oxyhydrate, Na0.3CoO2·1.3H2O”, 6th Pacific Rim Conference on Ceramic and Glass Technology (PacRim6) Maui, USA (2005/9/11-16).

  3. Matsuzaki, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Field-effect transistor using extremely wide bandgap oxide semiconductor Ga2O3” 4th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-4), Tokyo, Japan (2005/4/7-8, Tokyo).

  4. Nomura, T. Kamiya, H. Ohta, A. Takagi, H. Yanagi, M. Hirano, and H. Hosono, “Room Temperature Fabrication of Large Mobility (>10cm2(Vs)-1) Amorphous Oxide Semiconductor and Application to Thin Film Transistor”, Second Int. Conf. Adv. Mater. and Nanotechnology (AMN2), Queenstown, New Zealand (2005/2/6-11).

  5. Ogo, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth and structures of single-crystalline thin films of RAO3(MO)m (R = Lu and In; A = Ga and Fe; M = Zn, Mg, Fe, Mn and Co; m = integer) by reactive solid-phase epitaxy”, 4th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-4), Tokyo, Japan (2005/4/7-8).

  6. Kamiya, Y. Toda, S. Aiba, M. Miyakawa, K. Nomura, K. Hayashi, M. Hirano, and H. Hosono, “Field-effect transistor and field emission display devices using nonporous inorganic semiconductor C12A7:e–”, Second International Conference on Advanced Materials and Nanotechnology(AMN2), Queenstown, New Zealand, (2005/2/6-11).

  7. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Material exploration of amorphous oxide semiconductor and room temperature fabrication of high performance transparent flexible TFT”, The 2th Thin Film Materials & Devices Meeting, B-8, Kyoto (2005/11/4-5）

  8. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room temperature fabrication of transparent flexible TFT using amorphous oxide semiconductor”, The 52th JSAP Spring Meeting, Saitama (2005).

  9. Nomura, T. Kamiya, H. Ohta, A. Takagi, M. Hirano, and H. Hosono, “Material design of amorphous oxide semiconductor toward high performance flexible TFT”, The 52th JSAP Spring Meeting, Saitama (2005).

  10. Yabuta, M. Sano, K. Abe, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Room temperature fabrication of amorphous oxide channel TFT by RF sputtering”, The 66th JSAP Fall Meeting, Tokushima (2005/9/7-11).

  11. Sugiura, H. Ohta, K. Nomura, H. Hosono, K. Komoto, “Fabrication of epitaxial film of p-type oxide thermoelectric material SrxCoO2 (x ~ 0.4) and thermoelectric property”, Academic Forum on Ceramics Research in Tokai, The Ceramic Society of Japan, Aichi (2005/12/2).

  12. Sugiura, H. Ohta, K. Nomura, H. Yanagi, M. Hirano, H. Hosono, and K. Komoto, “Fabrication and characterization of superconductor Na0.35CoO2·1.3H2Oepitaxail film”, The 52th JSAP Spring Meeting, Saitama (2005/3/30).

  13. Matsuzaki, H. Hiramatsu, K. Nomura, K. Tajima, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Field-effect transistor using wide bandgap oxide semiconductor Ga2O3 film”, The 2th Thin Film Materials & Devices Meeting, B-9, Kyoto (2005/11/4-5）

  14. Ogo, K. Nomura, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Film growth of multicomponent oxide semiconductor with layered structure by reactive solid phase epitaxy”, The 2th Thin Film Materials & Devices Meeting, B-10, Kyoto (2005/11/4-5）

  15. Matsuzaki, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Field effect transistor using deep UV transparent oxide semiconductor Ga2O3”, 2005 Annual meeting of The Ceramic Society of Japan, Okayama (2005/3/22-24)

  16. Sugiura, H. Ohta, K. Nomura, H. Yanagi, M. Hirano, H. Hosono, and K. Komoto, “Fabrication of epitaxial film of hydroid cobalt oxide Na0.3CoO2·1.3H2O and the superconducting property”, The 52th JSAP Spring Meeting, Saitama (2005).

  17. Hosono, K. Nomura, and T. Kamiya, “Carrier transport of n-type transparent oxide semiconductor and Fabrication of high performance transparent flexible transistor”, 2005 Annual meeting of The Ceramic Society of Japan, Okayama (2005/3/22-24)

  18. Kamiya, K. Nomura, and H. Hosono, “Recent progress in amorphous oxide semiconductor: From structure, carrier transport to TFT performance”, The 7th International Conference on Nano-Molecular Electronics (ICNME 2006), SI-2I, Kobe, Japan (2006/12/13-15).

  19. Nomura, T. Kamiya, H. Ohta, and M. Hirano, and H. Hosono, “Universal relation observed in carrier transport properties in amorphous oxide semiconductors with different chemical compositions”, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2006), Nice, France (2006/5/29-6/2).

  20. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Side-gated nanowire field-effect transistor using amorphous oxide semiconductor channel”, XIII International Workshop on Oxide Electronics, Ischia, Italy (2006/10/8-11).

  21. Kamiya, K. Nomura, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Atomic and electronic structure of amorphous oxide semiconductor InGaZnO4 studied by ab-initio calculations”, XIII International Workshop on Oxide Electronics (WOE13) Ischia, Italy (2006/10/8-11).

  22. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Combinatorial Study on In-Ga-Zn-O Semiconductor Films as Active-channel Layers for Thin-film Transistor”, Mater. Res. Soc. Symp. Spring Meeting, San Francisco, USA, (2006/4/17-21).

  23. Ofuji, K. Abe, N. Kaji, R. Hayashi, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Integrated circuits based on amorphous indium-gallium-zinc-oxide-channel thin-film transistors”, Electrochemical Society (ECS) 8th Thin Film Transistor Technology (TFTT VIII) symposium, Cancun, Mexico, (2006/10/29-11/3).

  24. Ohta, S-W. Kim, K. Nomura, S. Ohta, M. Hirano, H. Hosono, and K. Koumoto, “Giant Thermopower of 2DEG Localized at the Heterointerface of TiO2/SrTiO3” JAPAN NANO 2006, Tokyo, Japan (2006/02/20-21).

  25. Kumomi, N. Kaji, H. Yabuta, M. Sano, K. Abe, T. Den, K. Nomura, T. Kamiya, and H. Hosono, “Amorphous Oxide Channel TFTs Fabricated with RF Sputtering Method”, International TFT Conference 2006 (ITC06), Fukuoka, Japan (2006/1/19-20).

  26. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Analysis of local atomic structure of amorphous oxide semiconductor In-Ga-Zn-O by EXAFS and ab-initio structural relaxation calculation”, The 67th JSAP Fall Meeting, 7a-ZK-5, Shiga (2006/8/29-9/1).

  27. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Local atomic structure and electronic structure for amorphous oxide semiconductor In-Ga-Zn-O”, The 3th Thin Film Materials & Devices Meeting, 156, Nara (2006/11/10-1).

  28. Ogo, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Optical and electrical property of new layered oxide compound In3FeTi2O10”, The 3th Thin Film Materials & Devices Meeting, 164, Nara (2006/11/10-11).

  29. Katase, K. Nomura, H. Yanagi, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Effect of Bi flux on the film growth during reactive solid phase epitaxy of homologous compound InGaO3(ZnO)m”, The 3th Thin Film Materials & Devices Meeting, 162, Nara (2006/11/10-11).

  30. Nishio, H. Miyakawa, K. Nomura, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of 12CaO·7Al2O3 electride nano wire”, The 3th Thin Film Materials & Devices Meeting, 160, Nara (2006/11/10-11).

  31. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of amorphous oxide semiconductor nano wire FET”, The 3th Thin Film Materials & Devices Meeting, 158, Nara (2006/11/10-11).

  32. Sugiura, H. Ohta, A. Mizutani, K. Nomura, T. Saito, Y. Ikuhara, H. Yanagi, M. Hirano, H. Hosono, and K. Komoto, “Fabrication of epitaxial film of layered cobalt oxide by reactive solid phase epitaxy and thermoelectric property”, The 67th JSAP Fall Meeting, Invited, Shiga (2006/8/29-9/1).

  33. Ohta, S.W. Kim, K. Nomura, S. Ohta, T. Nomura, M. Hirano, H. Hosono, and K. Komoto, “Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas at TiO2/SrTiO3 heterointerface”, The 53th JSAP Spring Meeting, Tokyo (2006/3/22).

  34. Kaji, M. Ofuji, C.L. Chang, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Fabrication of ring oscillator using amorphous oxide semiconductor TFT”, The 67th JSAP Fall Meeting, Shiga (2006/8/29-9/1).

  35. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Komoto, “Metallization of 12CaO·7Al2O3 crystal”, The 53th JSAP Spring Meeting, Tokyo (2006/3/22-26).

  36. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Komoto, “Fabrication of high quality Ca3Co4O9 epitaxial film by reactive solid phase epitaxy”, The 53th JSAP Spring Meeting, Tokyo (2006/3/22-26).

  37. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Operation characteristics of amorphous oxide semiconductor based nano wire field-effect transistor”, The 67th JSAP Fall Meeting, Shiga (2006/8/29-9/1).

  38. Ogo, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Optical and electrical property of In3FeTi2O10 epitaxial film”, The 67th JSAP Fall Meeting, Shiga (2006/8/29-9/1).

  39. Kamiya, K. Nomura, H. Ohta, M. Hirano, and H. Hosono, “Analysis of local atomic structure and electronic structure for amorphous oxide semiconductor In-Ga-Zn-O by molecular dynamics and ab-initio calculation”, The 67th JSAP Fall Meeting, Shiga (2006/8/29-9/1).

  40. Kamiya, K. Nomura, M. Hirano, and H. Hosono, “Material design of amorphous oxide semiconductor and TFT characteristics of flexible transistor”, 2006 Annual meeting of The Ceramic Society of Japan, Tokyo (2006/3/14-16)

  41. Itagaki, T. Iwasaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Field effect transistor using In-Ga-Zn-O films and the chemical composition dependency”, The 53th JSAP Spring Meeting, Tokyo (2006/3/22-26).

  42. L. Chang, M. Sano, M. Majima, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Fabrication of amorphous oxide channel TFT on plastic substrate”, The 53th JSAP Spring Meeting, Tokyo (2006/3/22-26).

  43. Nomura, T. Kamiya, T. Uruga, H. Ohta, M. Hirano, and H. Hosono, “Relationship of carrier transport properties, local atomic configuration and tails states in ionic amorphous semiconductor, In-Ga-Zn-O”, The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan (2007/10/15-18).

  44. Hosono, K. Nomura, Yoichi Ogo, and T. Kamiya, “Factors controlling electron transport properties in transparent amorphous oxide semiconductors”, The 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Colorado, USA (2007/8/21-25).

  45. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of ScAlMgO4 single-crystalline thin films by a reactive solid phase epitaxy and its application to lattice-matched buffer layer for ZnO”, 2007 Korea-Japan Workshop on Nanomaterials for IT, O-10 , Seoul, South Korea (2007/12/27-28).

  46. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Specific contact resistance at interfaces between a-IGZO and various electrodes”, 2007 Korea-Japan Workshop on Nanomaterials for IT, O-9, Seoul, South Korea (2007/12/27-28).

  47. Yanagi, K.-B. Kim, M. Kikuchi, M. Miyakawa, H. Hiramatsu, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Photoelectron Spectroscopic Study of C12A7:e- Cathode/Alq3 and LaCuOSe Anode/NPB Interfaces: Formation of Low Carrier Injection Barriers for OLEDs”, The 34th International Symposium on Compound Semiconductors (ISCS), Kyoto, Japan (2007/10/15-18).

  48. Kamiya, K. Nomura, M. Hirano, and H. Hosono, “Electronic structures of oxygen defect and hydrogen in amorphous oxide semiconductor, a-In-Ga-Zn-O”, The 34th International Symposium on Compound Semiconductors (ISCS), Kyoto, Japan (2007/10/15-18).

  49. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, “Fabrication of ScAlMgO4 single-crystalline thin films and application to lattice-matched buffer layer for ZnO and GaN”, 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5), 21pP53, Shonan, Japan, (2007/5/21-22).

  50. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano and H. Hosono, “Relationship between In-In distance and Electron Mobility in Ionic Amorphous Semiconductor In-Ga-Zn-O5”, The International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5) 22pO09, Shonan, Japan, (2007/5/21-22).

  51. Mine, H. Yanagi, K. Nomura, T. Kamiya, M. Hirano and H. Hosono, “Control of carrier concentration in CuGaO2 epitaxial film for p-channel transparent transistor”, 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5) 21pP41, Shonan, Japan, (2007/5/21-22).

  52. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono “Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes”5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-5), 21pP56, Shonan, Japan, (2007/5/21-22).

  53. Yanagi, K.-B. Kim, M. Kikuchi, M. Miyakawa, H. Hiramatsu, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Formation of low carrier injection barrier at C12A7:e- cathode/Alq3 and LaCuOSe anode/NPB interfaces studied by photoelectron spectroscopy”, The 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5), 21pP25, Shonan, Japan, (2007/5/21-22).

  54. Nishio, K. Nomura, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication and transport properties of 12CaO·7Al2O3 (C12A7) electride nanowire”, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-6-5, Strasbourg, France, (2007/5/28-6/1).

  55. Itagaki, T. Iwasaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Zn-In-O based thin-film transistors: Compositional dependence”, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-6-4, Strasbourg, France, (2007/5/28-6/1).

  56. Ogo, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, “Effects of thermal annealing on amorphous oxide semiconductor Sn-Ga-Zn-O based TFTs”, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-5-6, Strasbourg, France, (2007/5/28-6/1).

  57. Nomura, T. Kamiya, H. Ohta, M. Hirano and H. Hosono, “Effects of thermal annealing and structural relaxation on carrier transport and optical properties in ionic amorphous semiconductors In-Ga-Zn-O”, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-5-3, Strasbourg, France, (2007/5/28-6/1).

  58. Kamiya, K. Tajima, K. Nomura, H. Yanagi, and H. Hosono, “Interface electronic structures of transparent oxide semiconductors and metals: First-principle study”, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-3-4, Strasbourg, France, (2007/5/28-6/1).

  59. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Relationship between tail state and carrier transport for transparent amorphous oxide semiconductor In-Ga-Zn-O”, The 4th Thin Film Materials & Devices Meeting, P-29, Kyoto (2007/11/2-3).

  60. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Relationship between local structure and carrier transport for ionic transparent amorphous oxide semiconductor In-Ga-Zn-O”, The 54th JSAP Spring Meeting, 30a-ZA-11, Tokyo (2007/3).

  61. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Tail state and carrier transport for ionic transparent amorphous oxide semiconductor In-Ga-Zn-O”, The 54th JSAP Spring Meeting, 30a-ZA-10, Tokyo (2007/3).

  62. Nishio, H. Miyakawa, K. Nomura, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of 30nm-width nano-wire with high electrical conductivity using nonporous crystalline 12CaO·7Al2O3 (C12A7) and the characterization of electrical conduction”, The 4th Thin Film Materials & Devices Meeting, P-32, Kyoto (2007/11/2-3).

  63. Ogo, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous Sn-Ga-Zn-O thin film transit and effect of thermal annealing on the subgap defect state”, The 4th Thin Film Materials & Devices Meeting, P-30, Kyoto (2007/11/2-3).

  64. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Specific resistance of amorphous oxide semiconductor In-Ga-Zn-O / metal interface”, The 4th Thin Film Materials & Devices Meeting, P-28, Kyoto (2007/11/2-3).

  65. Yanagi, M. Kikuchi, B. Kim, H. Hiramatsu, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Electronic structure analysis of LaCuOSe/NPB interface by photoelectron spectroscopy and formation of low barrier hole injection layer”, The 54th JSAP Spring Meeting, 28a-SK-3, Tokyo (2007/3).

  66. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Field–effect transistor using Zn-In-O system and the dependency of chemical composition”, The 54th JSAP Spring Meeting, 30a-ZA-1, Tokyo (2007/3).

  67. Ogo, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of ionic amorphous oxide semiconductor Sn-Ga-Zn-O TFT and the annealing effect”, The 54th JSAP Spring Meeting, 29p-ZA-11, Tokyo (2007/3).

  68. Sugiura, H. Ohta, Y. Ishida, K. Nomura, M. Hirano, H. Hosono, and K. Komoto, “Carrier transport for CaxCoO2 epitaxial films with different Ca ion ordering”, The 68th JSAP Fall Meeting, 7a-ZK-5, Hokaidou (2007/9/4-8).

  69. Tajima, K. Nomura, H. Yanagi, M. Hirano, T. Kamiya, and H. Hosono, “Electronic structure of Au/ZnO interface by first principle calculation”, The 45th basic science division of The Ceramic Society of Japan, 1A21, Sendai (2007/1/22-23).

  70. Kikuchi, B. Kim, H. Miyakawa, K. Nomura, H. Hiramatsu, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Observation of electronic structure of transparent conductive oxide/organic semiconductor interface by photoelectron spectroscopy”, The 45th basic science division of The Ceramic Society of Japan, 1C03, Sendai (2007/1/22-23).

  71. -H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.-C. Wu, “Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States”, The SID International Symposium Seminar, and Exhibition (SID2008), P-29, Los Angeles USA (2008/5/18-23).

  72. Kamiya, K. Nomura, and H. Hosono, “The Origins of High Mobility and Low Operation Voltage of Amorphous Oxide Channel TFTs”, The 21st Annual Meeting of The IEEE Lasers & Electro-Optics Society, MG 1, Newport Beach, USA, (2008/11/9-13).

  73. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, “Carrier transport and subgap states in highly-doped a-In-Ga-Zn-O films”, The 2nd International Symposium on Transparent Conductive Oxides (IsTCO2008), Crete, Greece (2008/10/22-26).

  74. Sato, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous In-Ga-Zn-O thin-film transistor with bottom-gate coplanar structure”, The 2nd International Symposium on Transparent Conductive Oxides (IsTCO2008), Crete, Greece (2008/10/22-26).

  75. Kamiya, K. Nomura, M. Hirano, and H. Hosono, “Percolation conduction theory for crystalline and amorphous InGaZnO4”, The 2nd International Symposium on Transparent Conductive Oxides (IsTCO2008), Crete, Greece (2008/10/22-26).

  76. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, “Existence of subgap states near valence band maximum and relationship with carrier transport properties”, The IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC2008), Kyoto, Japan, (2008/10/20-22).

  77. Kamiya, K. Nomura, Masahiro Hirano, and H. Hosono, “Theory of Electron Transport in Disordered Oxides: Percolation Model”, The IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC2008), Kyoto, Japan, (2008/10/20-22).

  78. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Tin monooxide as a 5s based p-type oxide semiconductor: Epitaxial film growth and thin film transistor”, European Mater. Res. Soc. Symp. Fall Meeting, B02, Warsaw, Poland (2008/9/15-19).

  79. T, Katase, Nomura, H. Ohta, H. Yanagi, T. Kamiya, M, Hirano and H. Hosono, “Low-Temperature, Large-Domain Growth of ZnO and GaN Epitaxial Films on Lattice-Matched Buffer Layers”, European Mater. Res. Soc. Symp. Fall Meeting, Thes-16-16:30, Warsaw, Poland (2008/9/15-19).

  80. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, “Low-Temperature, Large-Domain Growth of ZnO and GaN Epitaxial Films on Lattice-Matched Buffer Layers”, Joint Conferences of The 2nd International Conference on the Science and Technology for Advanced Ceramics and The 1st International Conference on Science and Technology of Solid Surface and Interface (STAC-STSI), Chiba, Japan (2008/5/30-6/1).

  81. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “High mobility Cu2O epitaxial films and the application to p-channel thin film transistor”, European Mater. Res. Soc. Symp. Fall Meeting, Warsaw, Poland (2008/9/15-19).

  82. Nomura, Y. Kikuchi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Improvement of TFT characteristics of a-In-Ga-Zn-O TFT by wet oxygen annealing” The 5th Thin Film Materials & Devices Meeting, Nara (2008/10/31-11/1).

  83. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yong, K. Kobayashi, M. Hirano, and H. Hosono, “Analysis of subgap state for transparent amorphous oxide semiconductor by hard X-ray spectroscopy”, The 55th JSAP Spring Meeting, 30a-V-5, Tokyo (2008/3/27-30).

  84. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Elimination of defect and stabilization for a-In-Ga-Zn-O TFT by wet oxygen annealing”, The 69th JSAP Fall Meeting, 5p-J-5, Nagoya (2008/9/2-9).

  85. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Epitaxial growth of 5sorbital based p-type oxide semiconductor SnO and p-channel transistor”, The 69th JSAP Fall Meeting, 2p-J-4, Nagoya (2008/9/2-9).

  86. Shimizu, K. Nomura, M. Hirano, T. Kamiya, and H. Hosono, “Characterization of Tail state in amorphous oxide semiconductor a-In-Ga-Zn-O film by CPM method (2)”, The 69th JSAP Fall Meeting, 4p-N-8, Nagoya (2008/9/2-9).

  87. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of single-crystalline film of ScAlMgO4 by R-SPE method and the application to lattice matched buffer layer”, The 55th JSAP Spring Meeting, 30p-V-4, Tokyo (2008/3/27-30).

  88. Yabuta, K. Takada, M. Shimada, N. Kachi, T. Hayashi, H. Kumomi, I. Hirosawa, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Electrical conduction and structure for amorphous In-Ga-Zn-O film controlled by post thermal annealing””, The 55th JSAP Spring Meeting, 30a-V-10, Tokyo (2008/3/27-30).

  89. Kamiya, K. Nomura, and H. Hosono, “Carrier transport mechanism for oxide semiconductor InGaZnO4 with structural randomness”, The 55th JSAP Spring Meeting, 30a-V-9, Tokyo (2008/3/27-30).

  90. Shimizu, K. Nomura, M. Hirano, T. Kamiya, and H. Hosono, “Characterization of Tail state in amorphous oxide semiconductor a-In-Ga-Zn-O film by CPM method”, The 55th JSAP Spring Meeting, 30a-V-8, Tokyo (2008/3/27-30).

  91. Kamiya, H.H. Heish, K. Nomura, and H. Hosono, C.-C. Wu, “Subgap state analysis of amorphous oxide a-InGaZnO4 TFT by TFT simulation”, The 55th JSAP Spring Meeting, 30a-V-7, Tokyo (2008/3/27-30).

  92. Nakanishi, M. Kimura, K. Nomura, T. Kamiya, and H. Hosono, “Extraction of trap state and characterization of amorphous In-Ga-Zn-O thin film transistor”, The 55th JSAP Spring Meeting, 30a-V-6, Tokyo (2008/3/27-30).

  93. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of high mobility p-type oxide semiconductor Cu2O thin film and field effect, The 55th JSAP Spring Meeting, 29p-L-8, Tokyo (2008/3/27-30).

  94. Kurita, H. Ohta, R. Asahi, Y. Masuoka, K. Nomura, H. Hosono, and K. Komoto, “Seebeck coefficient for two-dimensional electron gas in field induced SrTiO3”, The 55th JSAP Spring Meeting, 29p-L-5, Tokyo (2008/3/27-30).

  95. Kachi, K. Takahashi, Katsumi Abe, T. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “TFT characteristics of back channel etched amorphous In-Ga-Zn-O TFT”, The 69th JSAP Fall Meeting, 5p-J-3, Nagoya (2008/9/2-9).

  96. Sugiura, H. Ohta, A. Ishida, R. Huang, Y. Ikuhara, K. Nomura, H. Hosono, and K. Komoto, “Structural Transformation of Ca-Arrangements and Carrier Transport Properties in Ca0.33CoO2 Epitaxial Films”, The 69th JSAP Fall Meeting, 4p-J-10, Nagoya (2008/9/2-9).

  97. Yoshikawa, D. Kurita, H. Ohta, R. Asahi, Y. Masuoka, K. Nomura, H. Hosono, and K. Komoto, “Seebeck coefficient for two-dimensional electron gas in field induced SrTiO3(2)”, The 69th JSAP Fall Meeting, 2p-J-11, Nagoya (2008/9/2-9).

  98. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Effect of thermal annealing on carrier transport for p-type oxide semiconductor Cu2O epitaxial film”, The 69th JSAP Fall Meeting, 2p-J-3, Nagoya (2008/9/2-9).

  99. Nishio, K. Nomura, H. Miyakawa, H. Yanagi, K. Hayashi, T. Kamiya, M. Hirano, and H. Hosono, “Control of electrical conductivity for electron doped 12CaO·7Al2O3(C12A7:e-) nano wire”, 2008 Annual Meeting of The Ceramic society of Japan, Nigata (2008/3/20 -21).

  100. Omura, T. Iwasaki, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “First-principles calculation for effect of impurities on electronic states of amorphous In-Ga-Zn-O”, Mater. Res. Soc. Symp. Proc. 1109-B04-02, Boston, USA (2009/11/9).

  101. Hasegawa, T. Nakanishi, M. Sakemi, M. Kimura, K. Nomura, T. Kamiya, H. Hosono, T. Aoki, T. Kawase, and S. Inoue,　 “Characteristic comparison between complementary inverter using amorphous oxide TFT and polymer organic TFT and n-type inverter using amorphous oxide TFTs”, IDW’09, Miyazaki, Japan (2009/12/9-11).

  102. Shimizu, K. Nomura, M. Hirano, T. Kamiya, and H. Hosono, “Characterization of subgap states inn amorphous In-Ga-Zn-O by constant photocurrent method”, The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23), Utrecht,　Netherland (2009/8/28).

  103. Katase, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, “Atomic and electronic structures of ScAlMgO4 and over-grown GaN epitaxial film”, 3rd International Symposium on Science and Technology of Advanced Ceramics (STAC-3) 16pP037, Yokohama, Japan (2009/6/ 16-18).

  104. Kumada, K. Matsuzaki, K. Nomura, H. Hosono, and T. Susaki, “Characterization of MgO(111) thin films grown on Al2O3(0001)substrates”, 3rd International Symposium on Science and Technology of Advanced Ceramics(STAC-3), 16pP027, Yokohama, Japan (2009/6/ 16-18).

  105. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Kobayashi, M. Hirano and H. Hosono, “Electronic structure analysis of transparent amorphous oxide semiconductor, a-In-Ga-Zn-O, by angle-resolved hard x-ray photoelectron spectroscopy”, 3rd International Symposium on Science and Technology of Advanced Ceramics, 16pHsO05, Yokohama, Japan (2009/6/ 16-18).

  106. Nishio, K. Nomura, H. Yanagi, T. Kamiya, Masahiro Hirano, and H. Hosono, “Short-channel nanowire transistor using a nonporous crystal semiconductor 12CaO·7Al2O3”, 3rd International Symposium on Science and Technology of Advanced Ceramics (STAC-3), 16pP026, Yokohama, Japan (2009/6/ 16-18).

  107. Kamiya, K. Nomura, and H. Hosono, “What have been clarified for amorphous oxide semiconductors?”, Int’l Display Manufacturing Conference (IDMC) / 3D Systems and Applications (3DSA) / Asia Display 2009 (IDMC·3DSA·Asia Display’09, Thu-S22-03, Taipei, Taiwan (2009/4/27-30).

  108. H. Lee, K. Kawamura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Steady-state photoconductivity of amorphous-In-Ga-Zn-O”, The 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), 16p-P171, Tokyo, Japan (2009/4/15-17).

  109. Nomura, Y. Kikuchi, T. Kamiya, M. Hirano, and H. Hosono, “On the stability of a-In-Ga-Zn-O thin film transistor”, The 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), 17a-O006, Tokyo, Japan (2009/4/15-17).

  110. Kikuchi, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Device characteristics improvement of a-In-Ga-Zn-O TFTs by low temperature annealing”, The 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), 16p-P164, Tokyo, Japan (2009/4/15-17).

  111. Shinozaki, K. Nomura, T. Katase, T. Kamiya, M. Hirano, and H. Hosono, “Epitaxial growth of GaN films on InGaZnO4 single crystalline buffer layer”, The 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), 15p-P005, Tokyo, Japan (2009/4/15-17).

  112. Nomura, T. Kamiya, N. Kobayashi, M. Hirano, and H. Hosono, “Bias stability for a-In-Ga-Zn-O TFT and the origin”, The 6th Thin Film Materials & Devices Meeting, 3O06, Kyoto (2009/11/2-3).

  113. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Origin of bias stress degradation for a-In-Ga-Zn-O TFT”, The 70th JSAP Fall Meeting, 11p-J-5, Toyama (2009/9/8~11).

  114. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Bias stress stability and the origin for a-In-Ga-Zn-O TFT”, The 56th JSAP Spring Meeting, Tsukuba (2009/3/30-4/2).

  115. Nakanishi, T. Hasegawa, M. Sakami, Y. Okumura, Y. Ueda, M. Kimura, K. Nomura, T. Kamiya, H. Hosono, T. Hiramatsu, M. Furuta, T. Hirao, and T. Aoki, ”Extraction of trap density for oxide thin film transistor and development of CTFT using oxide thin film transistor and polymer TFT”, The 6th Thin Film Materials & Devices Meeting, 3P46, Kyoto (2009/11/2-3).

  116. Shinozaki, K. Nomura, T. Katase, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of single crystalline thin film of layered oxide crystal InGaZnO4 and the application to buffer layer”, The 6th Thin Film Materials & Devices Meeting, 3P50, Kyoto (2009/11/2-3).

  117. Shao, K. Nomura, Y. Kikuchi, T. Kamiya, M. Hirano, and H. Hosono, “Formation mechanism of very thin a-In-Ga-Zn-O film and the TFT characteristics”, The 6th Thin Film Materials & Devices Meeting, 2P51, Kyoto（2009/11/2-3）.

  118. Y Kikuchi, Nomura, T. Kamiya, and H. Hosono, “Improvement of TFT characteristics of a-In-Ga-Zn-O TFT by low temperature thermal annealing”, The 6th Thin Film Materials & Devices Meeting, 2P37, Kyoto (2009/11/2-3).

  119. H. Lee, K. Kawamura, K. Nomura, T. Kamiya, and H. Hosono, “Photoconductivity characterization of amorphous oxide semiconductor a-In-Ga-Zn-O”, The 6th Thin Film Materials & Devices Meeting, 3P38, Kyoto (2009/11/2-3).

  120. K Shimizu, S. Maeda, Nomura, M. Hirano, T. Kamiya, and H. Hosono, “Characterization of subgap defect for amorphous In-Ga-Zn-O films by CPM method”, The 6th Thin Film Materials & Devices Meeting, 3O02, Kyoto (2009/11/2-3).

  121. Nishio, K. Nomura, H. Yanagi, T. Kamiya, and H. Hosono, “Side gated field-effect transistor using electron doped 12CaO·7Al2O3 nanowire channel”, The 70th JSAP Fall Meeting, 8a-H-1, Toyama (2009/9/8~11).

  122. Ohta, Y. Masuoka, R. Asahi, T. Kato, Y. Ikuhara, K. Nomura, and H. Hosono, “SrTiO3 based field-effect transistor using amorphous 12CaO·7Al2O3 gate insulator”, The 70th JSAP Fall Meeting, 8a-H-2, Toyama (2009/9/8~11).

  123. Ohta, Y. Masuoka, R. Asahi, K. Nomura, and H. Hosono, “Visualization of channel in SrTiO3based field effect transistor by thermoelectric measurement”, The 70th JSAP Fall Meeting, 8a-H-3, Toyama (2009/9/8~11).

  124. Y Kikuchi, Nomura, H. Yanagi, T. Kamiya, and H. Hosono, “Improvement of TFT characteristics of a-In-Ga-Zn-O TFT by low temperature thermal annealing”, The 70th JSAP Fall Meeting, 11p-J-4, Toyama (2009/9/8~11).

  125. H. Lee, K. Kawamura, K. Nomura, T. Kamiya, and H. Hosono, “Characterization of amorphous oxide semiconductor a-In-Ga-Zn-O by steady-state photoconductivity measurement”, The 70th JSAP Fall Meeting, 11p-J-2, Toyama (2009/9/8~11).

  126. Maeda, K Shimizu, K. Nomura, M. Hirano, T. Kamiya, and H. Hosono, “Characterization of Tail state in amorphous oxide semiconductor a-In-Ga-Zn-O film by CPM method (4)”, The 70th JSAP Fall Meeting, 11p-J-1, Toyama (2009/9/8~11).

  127. Kumada, K. Matsuzaki, K. Nomura, H. Hosono, and T. Suzaki, “Effect of polarized layered structure for polar- MgO(111) film”, The 70th JSAP Fall Meeting, 8p-H-6, Toyama（2009/9/8~11）.

  128. Shimizu, S. Maeda, K. Nomura, M. Hirano, T. Kamiya, and H. Hosono, “Characterization of Tail state in amorphous oxide semiconductor a-In-Ga-Zn-O film by CPM method (3)”, The 56th JSAP Spring Meeting, Tsukuba (2009/3/30-4/2).

 

Invited talks

  1. Ohta, K. Nomura, K. Ueda, M. Orita, M. Hirano, H. Hosono, “Single crystal films of In2O3(ZnO)m (m=integer) natural super lattice grown by novel solid-state diffusion technique”, The International Conference On Metallurgical Coatings And Thin Films (ICMCTF 2002), San Diego, California, USA (2002).

  2. Ohta, H. Hiramatsu, M. Orita, M. Hirano, K. Nomura, K. Ueda, H. Hosono, T. Suzuki, Y. Ikuhara, “Reactive Solid-Phase Epitaxy – A magical way to fabricate single-crystalline thin films of complex oxides with superlattice structure ?”, 2002 MRS Fall Meeting, Boston, USA, (2002).

  3. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara and H. Hosono, “Single-crystalline film growth techniques of transparent oxide semiconductors”, 5th International Meeting of the Pacific Ceramic Societies (PacRim 5), Nagoya, JAPAN (2003).

  4. Ohta, K. Nomura, H. Hiramatsu, T. Kamiya, M. Hirano and H. Hosono, “Epitaxial Growth and Application of Transparent Oxide Semiconductors”, Euro. Ceram. Soc. (2003).

  5. Nomura, H. Ohta, H. Hiramatsu, T. Kamiya, M. Hirano, and H. Hosono, ”Reactive solid phase epitaxy for growing high-quality thin films of transparent oxide semiconductors”, The 4th International Conference on Solid-State Crystal & the 7th Polish conference on Crystal Growth (ICSSC), Zakopane, Poland (2004).

 

Presentations

  1. Nomura, Y. Ishikawa, and N. Shibata, “Crystallinity of AlN film deposited by reactive sputtering method”, The Ceramic Society of Japan, Aichi (1994).

  2. Nomura, S. Kawai, and N. Shibata, “Analysis of reaction at Au/Si3N4 interface by XPS-SIMS”, The Ceramic Society of Japan, Aichi (1995).

  3. Nomura, Y. Takeda, and N. Shibata, “In-situ observation of crystallization of ferroelectric thin film by micro-Raman spectroscopy”, The 46th JSAP Spring Meeting, Chiba (1999/3/28).

  4. Nomura, T. Inada, F. Yamada, H. Hidaka, H. Taguchi, M. Kato, and Y. Ando, “CO2-N2, CO2-O2 mixed gas separation property of zeolite film”, The 18th Annual meeting of The Membrane Society of Japan, A2-1-2, Tokyo (1996/5/16-17).

  5. Nomura, M. Kitano, S. Ikeda, N. Shibata, and M. Maeda, “Fabrication of ZnO thin film by pulsed current electrolysis”, The 68th Annual Meeting of The Electrochemical Society, Kobe (2001/4/1-4/3).

  6. Nomura, S. Ikeda, N. Shibata, and M. Maeda, “Fabrication of ferroelectric thin film by electro chemical method”, The 67th Annual Meeting of The Electrochemical Society, Nagoya (2001/4/4-6).

  7. Nomura, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Novel film growth technique of single crystalline In2O3(ZnO)m (m = integer) homologous compound”, 2nd International Symposium on Transparent Oxide Thin Films for Electronics and Optics, (TOEO-2), Tokyo, Japan (2001/11/8-9).

  8. Nomura, H. Ohta, K. Ueda, M. Orita, M. Hirano, and H. Hosono, “Film growth mechanism of natural supper lattice InGaO3(ZnO)5 (m=integer) single crystalline thin film”, The 49th JSAP Spring Meeting, Tokyo (2002/3/27-30).

  9. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of transparent MISFET using InGaO3(ZnO)5 single crystalline thin film”, The 63th JSAP Fall Meeting, Tokyo (2002).

  10. Nomura, H. Ohta, K. Ueda, M. Orita M. Hirano, and H. Hosono, “Fabrication of single crystalline thin film of natural supper lattice InMO3(ZnO)m (M=In, Ga, m=integer) (I)”, The 49th JSAP Spring Meeting, Tokyo (2002/3/27-30).

  11. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, and H. Hosono, “Fabrication of single crystalline film of natural supper lattice InGaO3(ZnO)m by instant solid phase epitaxy (I)”, The 15th Fall meeting of The Ceramic Society of Japan, Akita (2002/9/22-24) .

  12. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, and H. Hosono, “Fabrication of single crystalline film of natural supper lattice InGaO3(ZnO)m by instant solid phase epitaxy (II)”, The 15th Fall meeting of The Ceramic Society of Japan, Akita (2002/9/22-24) .

  13. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of transparent MISFET using InGaO3(ZnO)5 single crystalline thin film with normally insulating nature”, Mater. Res. Soc. Symp. Fall Meeting (2002 MRS), Boston, USA, (2002/12/2-6).

  14. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport for InGaO3(ZnO)m(m=integer) single crystalline films”, The 64th JSAP Fall Meeting, Tokyo (2003).

  15. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Transparent MISFET devices using InGaO3(ZnO)m (m=integer) single-Crystalline Thin Films and their carrier transport properties”, 3rd International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-3) Tokyo, Japan (2003/4/10-11).

  16. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara, and H. Hosono, “Single-crystalline film growth techniques of transparent oxide semiconductors” Pacific Rim Conference on Ceramic and Glass Technology (PacRim) (2003).

  17. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono,　“ZnO thin films epitaxially grown on three-dimensionally lattice-matched substrate: application of InGaO3(ZnO)6 single-crystalline layers”,11th International Workshop on Oxide Electronics (WOE11), P02-01, Hakone, Japan (2004/10/3-5).

  18. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4”, 11th International Workshop on Oxide Electronics (WOE11), P02-05, Hakone, Japan (2004/10/3-5).

  19. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport of extended and localized states in disordered single-crystalline semiconductor InGaO3(ZnO)5 thin film”, Mater. Res. Soc. Symp. Spring Meeting (2004 MRS) San Francisco, USA, (2004/4/12-16).

  20. Nomura, H. Ohta, A. Takagi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous Oxide Semiconductor Exhibiting Large Hall Mobility (> 10 cm2/Vs-1): Electronic Structure, Carrier Transport and Device Applications of a-InGaZnO4”, Mater. Res. Soc. Symp. Fall Meeting, (2004 MRS) Boston, USA, (2004/11/29-12/3).

  21. Nomura, H. Ohta, Kazushige Ueda, T. Kamiya, M. Hirano, and H. Hosono, “All oxide transparent MISFET using high-k dielectrics gates Insulating Films on Semiconductors”, 13th Bi-annual Conference Insulating on Silicon (INFOS2003), Barcelona, Spain (2003/6/18-20).

  22. Kamiya, H. Ohta, H. Hiramatsu, K. Hayashi, K. Nomura, S. Matsuishi, K. Ueda, M. Hirano, and H. Hosono, “Natural nanostructures in ionic semiconductors”, Micro and Nano Engineering (MNE 2003), Cambridge, UK (2003/11/22-25).

  23. Nomura, H. Ohta, K. Matsuzaki, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport of transparent oxide semiconductor InGaO3(ZnO)5 single crystalline thin film and filed effect transistor”, Thin Film Materials & Devices Meeting, Nara (2004/11/12）

  24. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport for transparent oxide semiconductor InGaO3(ZnO)ｍ(m=integer) single crystalline thin film”, 2004 Annual meeting of The Ceramic Society of Japan, Kanagawa (2004/3/22-24).

  25. Takeda, K. Nomura, H. Ohta, Y. Ogo, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Epitaxial film growth of Zinc oxide and improvement of surface roughness at low temperature”, Thin Film Materials & Devices Meeting, B-9, Nara (2004/11/12-13）

  26. Kamiya, K. Nomura, A. Takagi, H. Ohta, H. Yanagi, M. Hirano, and H. Hosono, “Room temperature deposition and carrier transport of amorphous oxide semiconductor InGaZnO4 having mobility (>10cm2/Vs)”, The 65th JSAP Fall Meeting, Miyagi (2004/9/1-4).

  27. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Low temperature film growth of ZnO films with atomically flat surface on RMO3(ZnO)m (R=In, Lu; M=Ga; m=integer) single crystalline buffer layer”, 2004 Annual meeting of The Ceramic Society of Japan, Kanagwa (2004/3/22-24) .

  28. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure for amorphous oxide semiconductor InGaZnO4”, 2004 Annual meeting of The Ceramic Society of Japan, Kanagawa (2004/3/22-24).

  29. Kamiya, H. Ohta, K. Nomura, M. Hirano, H. Yanagi, and H. Hosono, “Transparent oxide semiconductor device: from TCO to TOS”, 2004 Annual meeting of The Ceramic Society of Japan, Kanagawa (2004/3/22-24).

  30. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport for amorphous oxide semiconductor InGaZnO4 deposited at room temperature”, Thin Film Materials & Devices Meeting, Nara (2004/11/12-13）

  31. Nomura, A. Takagi, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport for transparent amorphous oxide semiconductor InGaZnO4”, The 51th JSAP Spring Meeting, Tokyo (2004/3/28-31).

  32. Ohta, S.W. Kim, S.-H Kim, K. Nomura, S. Ohta, K. Komoto, M. Hirano, and H. Hosono, “Fabrication of thermoelectric oxide semiconductor NaxCoO2 (x~0.83) thin film by reactive solid phase epitaxy, The 51th JSAP Spring Meeting, Tokyo (2004/3/28-31)