BOOKS

BOOKS

  1. T. Kamiya, K. Nomura, and H. Hosono “Transparent oxide semiconductor: From material design to device application” in H. Yanagida et al. (Eds.), Ceramic database 2004 (32), Techno-plaza, pp.158-161 (2004). (Japanese)

  2. T. Kamiya, K. Nomura, and H. Hosono, “High performance thin film transistor using transparent oxide semiconductor” in Electronic paper jitsuyouka saizensen, NTS Inc., pp.267-280 (2005). (Japanese)

  3. K. Nomura, H. Ohta, T. Kamiya, and H. Hosono “Single-crystalline thin film growth of transparent oxide semiconductor with natural superlattice structure and transparent oxide semiconductor” in Japan Metal Society (Ed.), Practical microscopy techniques for materials development, Japan Metal Society / Maruzen Co., Ltd., pp.222 (2006). 

  4. K. Nomura, “Flexible electronics and amorphous semiconductor” in H. Hosono & M. Hirano (Eds.), Transparent oxides as active electronic materials and their applications, CMC Publishing Co., Ltd., pp.102-111 (2006). 

  5. K. Nomura, “Oxide semiconductor based field-effect transistor” in H. Hosono & M. Hirano (Eds.), Transparent oxides as active electronic materials and their applications, CMC Publishing Co., Ltd., pp.63-67 (2006). 

  6. T. Kamiya, K. Nomura, and H. Hosono, “Oxide based transistor” in Y. Uraoka (Ed.), Low temperature poly-Silicon thin film transistor for system on panel, CMC Publishing Co., Ltd., pp.243-264 (2007). 

  7. K. Nomura, “ Chapter 5 Transparent amorphous oxide semiconductor a-In-Ga-Zn-O and the TFT applications” in H. Hosono & M. Hirano (Eds.), Oxide semiconductors and iron-based superconductors -novel materials functionalities and emerging applications-, CMC Publishing Co., Ltd.,  (2010). (Japanese).

  8. K. Nomura, T. Kamiya and H. Hosono, “Development of n-type-a-In-Ga-Zn-O/P-type c-Si hetrojunction solar cell” in High efficiency solar cells, Sokoshay Printing Ltd. 306-318, (2012). 

  9. T. Kamiya, K. Nomura, and H. Hosono, “Chapter 1 Amorphous oxide semiconductor” in Transparent conductive film Various process technology, practical use and commercialization of leading ability and material, Johokikou, pp17-36 (2012). 

  10. T. Kamiya, K. Nomura, K. Ide, J. Kim, H. Hiramatsu, H. Kumomi, and H. Hosono, “Amorphous Oxide Semiconductor Thin-Film Transistors”, in Novel Structured Metallic and Inorganic Materials, Chapter 38, Y Setsuhara et Eds., Springer Singapore (2019).

  11. K.Ide, T. Katase, K. Nomura, H. Kumomi, H. Hosono and T. Kamiya, “Amorphous oxide semiconductor In-Ga-Zn-O”, 4-2-7 in Handbook of thin film Fabrication, NTS, Tokyo (2019). 

  12. T. Kamiya, K. Nomura, K. Ide, and H Hosono, “Chapter 4 Defects and Relevant Properties”, in Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, Wiley (2022).
  13. K. Nomura, “Chapter 24 Toward the Development of High-Performance p -Channel Oxide-TFTs and All-Oxide Complementary Circuits”, in Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, Wiley (2022)

Review and Invited Articles

  1. Kamiya, H. Ohta, H. Hiramatsu, H. Kamioka, and K. Nomura, “Transparent oxide semiconductor and device application”, Optronics 247, pp.128-139 (2004). (Japanese)

  2. Kamiya, K. Nomura, and H. Hosono, “Amorphous oxide semiconductor exhibiting high mobility (>10cm2(Vs)-1) and room temperature fabrication of thin film transistor”, The text of 31th Amorphous seminar, pp.1-6 (2004). (Japanese)

  3. Kamiya, K. Nomura, and H. Hosono, “Transparent filed-effect transistors fabricated using transparent oxide semiconductors “, Material stage 3, pp.85-92 (2005). (Japanese)

  4. Nomura, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Transparent filed-effect transistor using transparent oxide semiconductor”, Materials Integration 18, pp.3-9 (2005). (Japanese)

  5. Nomura, “Transparent electronic device using transparent oxide semiconductor”, Function and Materials 4, pp.30-39 (2005). (Japanese)

  6. Hosono, K. Nomura, and T. Kamiya, “Transparent flexible transistor using amorphous oxide semiconductor”, OYO Buturi 74, pp.910-916 (2005). (Japanese)

  7. Nomura, T. Kamiya, and H. Hosono, “Material exploration of amorphous oxide semiconductor toward high-performance flexible TFT and the performance of TFTs”, Seikei-Kakou 17, pp.588-592 (2005). (Japanese)

  8. Nomura, T. Kamiya, and H. Hosono, “Material exploration of amorphous oxide semiconductor for high-performance flexible TFT and the performance of the TFT”, The text of 32th Amorphous seminar, pp.17-22 (2005). (Japanese)

  9. Ohta, K. Nomura, H. Hiramatsu, M. Hirano, and H. Hosono, “Reactive solid-phase epitaxy”, Rigaku Journal 37, pp.3-10 (2006). (Japanese)

  10. Kamiya, K. Nomura, and H. Hosono, “Why is the amorphous oxide semiconductors paid to attention for a flexible device”, Materials Integration 20, 40-46 (2007). (Japanese)

  11. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Application of oxide semiconductor to thin film transistor”, Function and Materials 28, pp.42-53 (2008). (Japanese)

  12. Nomura, and H. Hosono, “Transparent circuit”, ITE Journal 63, pp.66-68 (2009). (Japanese)

  13. Kamiya, K. Nomura, and H. Hosono, “Engineering application of solid state physics: Carrier transport properties and electronic structures of amorphous oxide semiconductors: the present status”, Kotai butsuri 523, pp.621-633 (2009). (Japanese)

  14. Nomura, and H. Hosono, “Transparent electronic circuit”, Image lab 1, pp.32-35 (2010). (Japanese)

  15. Hosono, and K. Nomura, “Recent advancement and future prospective for oxide based TFTs”, Monthly Display 17, pp.4-8 (2011). (Japanese)

  16. Nomura, K. Lee, T. Kamiya, and H. Hosono, “Electronic structure of oxide semiconductor and application to solar cell”, The text of 3th solar cell seminar, (2011). (Japanese)

  17. Nomura, and H. Hosono, “Functional oxide semiconductor thin film and the electronic applications”, Journal of Materials Science and Engineering 49, 204-208, (2012). (Japanese)

  18. Nomura, “Research activity in US”, Oyo butsuri,88 (2019). (Japanese)