PATENTS

 [US]

Granted

  1. Saito, H. Hosono, T. Kamiya, K. Nomura, “Sensor and image pickup device”, US7453065, 2008-11-18

  2. Saito, H. Hosono, T. Kamiya, K. Nomura, “Sensor and image pickup device”, US7535010, 2009-05-19.

  3. Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, “Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator”, US7601984, 2009-10-13.

  4. Saito, H. Hosono, T. Kamiya, K. Nomura, “Sensor and image pickup device”, US7663116, 2010-02-16.

  5. Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, “Field effect transistor manufacturing method”, US7829444, 2010-11-09.

  6. Kumomi, H. Hosono, T. Kamiya, K. Nomura, “Display”, US7791072, 2010-09-07.

  7. Abe, H. Hosno, T. Kamiya, K. Nomura, “Integrated circuits utilizing amorphous oxides”, US7863611, 2011-01-04

  8. Saito, H. Hosono, T. Kamiya, K. Nomura, “Sensor and image pickup device”, US8084743, 2011-12-27.

  9. Abe, H. Hosono, T. Kamiya, K. Nomura, “Integrated circuits utilizing amorphous oxides,” US8203146, 2012-06-19

  10. Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, “Field effect transistor”, US8168974B2, 2012-05-01.

  11. Den, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, “Light-emitting device”, US8212252B2, 2012-07-03.

  12. H. Hong, K. Nomura, J.-H. Lan, “Method and apparatus for light induced etching of glass substrates in the fabrication of electronic circuits”, US9090499, 2013.3.10,

  13. H. Hong, T.-C. Fung, C. Kim, K. Nomura, “Laser annealing technique for metal oxide TFT”, US 9431244, 2014.9.24.

  14. Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, “Amorphous Oxide and Thin Film Transistor”, US9269826, 2016-02-23

  15. Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, “Amorphous oxide and field effect transistor”, US9583637B2, 2017-02-28.

  16. Nomura, “Tin based p-type oxide semiconductor and thin film transistor application”, US9647135B2, 2017/05/9

  17. Nomura, J. Hong, “Atomic layer deposition of P-type oxide semiconductor thin films”, US9685542B2, 2017/6/20

  18. Nomura, J. Hong, “Tunnel thin film transistor with hetero-junction structure”, US20160247927A1, 2017/9/12

  19. Nomura, “Hydrogenated p-channel metal oxide semiconductor thin film transistors”, US9985139B2, 2018/05/28.

  20. Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, “Swithing Element”, US20120012838A1, 2018-07-24.

  21. Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, “Amorphous Oxide and Thin Film transistor”, US9947803, 2018-04-17.


 [JP]

Granted

  1. Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, “Amorphous oxide and thin film transistor”, JP4620046, 2011-01-26.

  2. Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, “Vapor fabrication Method of Amorphous Oxide Thin Film”, JP4568827, 2010-10-27.

  3. Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, “Amorphous Oxide Thin Film”, JP4568828, 2010-10-27.

  4. Kumomi, H. Hosono, T. Kamiya, K. Nomura, “mage display device”, JP5126729, 2013-01-23.

  5. Den, H. Hosono, T. Kamiya, K. Nomura, “Light-emitting device”, JP5118811, 2013-01-16.

  6. Abe, H. Hosono, T. Kamiya, K. Nomura, “Semiconductor device utilizing amorphous oxides”, JP5053537, 2012-10-17.

  7. Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, “Field effect transistor manufacturing method”, JP5126730, 2013-01-23.

  8. Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, “Amorphous oxide and field-effect transistor”, JP5138163, 2013-02-06.

  9. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, “Field effect transistor manufacturing method”, JP5126730, 2013-01-23.

  10. Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, “Field-effect transistor”, JP5118812, 2013-01-16.

  11. Nagata, H. Hosono, T. Kamiya, K. Nomura, “Field-effect transistor”, JP5118810, 2013-01-16.

  12. Hosono, T. Kamiya, M. Hirano, Y. Ogo, K. Nomura, H. Hiramatsu, “P-channel thin film transistor manufacturing method”, JP5168605, 2013-03-21

  13. Nomura, H. Hosono, T. Kamiya, M. Hirano, “Thin film transistor manufacturing method”, JP5168599, 2013/1/11, 2010-081588.

  14. Hosono, T. Kamiya, M. Hirano, Y. Ogo, H. Hiramatsu, K. Nomura, “N-type semiconductor thin film, pn homojunction thin film solar and n-type semiconductor thin film and pn homojunction device manufacturing method”, JP2011119547A, 2013-12-04.

  15. Nakagawa, M. Sano, H. Hosono, T. Kamiya, K. Nomura, “Amorphous oxide and field-effect transistor”, JP2012248853A, 2014-09-10.

  16. Hosono, T. Kamiya, K. Nomura, “Ambipolar field effect transistor and the manufacturing”, JP2012182329A, 2015-06-17.

  17. Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, “Field effect transistor manufacturing method”, JP2012164987A, 2014-01-29.

  18. Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, “Field effect transistor manufacturing method”, JP2012164986A, 2014-01-29.

  19. Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, “Method of manufacturing Field effect transistor manufacturing method”, JP2012160740A, 2014-03-26

  20. Kumomi, H. Hosono, T. Kamiya, K. Nomura,, Image display, JP2012151485A, 2014-01-29.

  21. Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, “Field effect transistor manufacturing method”, Publication number: JP2012-124532, 2014-01-29.

  22. Nakagawa, M. Sano, H. Hosono, T. Kamiya, K. Nomura, “Amorphous oxide and field-effect transistor”, Publication number: JP2011-249823, 2013-11-06.