JOURNAL

JOURNAL PAPERS & conference proceedings

1.     K. Nomura, “Recent progress of oxide-TFT-based inverter technology”, Journal of Information Display (2021)

2.  Hsuan Chang, Chi-Hsin Huang, and Kenji Nomura, “Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film
Transistors and High-Gain Zero-VGS-Load Inverter”, ACS Appl. Electron.Mater. (2021).

3.  Chi-Hsin Huang, Hsuan Chang, Tzu-Yi Yang, Yi-Chung Wang, Yu-Lun Chueh, and KenjiNomura, “Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing”, ACS Appl. Mater.
Interface (2021)

4.   Chi-Hsin Huang, Yalun Tang, Tzu-Yi Yang, Yu-Lun Chueh, and Kenji Nomura,” Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter”, ACS Appl. Mater. Interface (2021).

5.  Yong Zhang Chi-Hsin Huang, and Kenji Nomura,”Voltage Transfer Characteristics of CMOS-Like Inverters for Ambipolar SnO Thin-Film Transistors”, IEEE Electro. Dev. lette. 43, 52 (2022).

6. Yalun Tang Chi-Hsin Huang, and Kenji Nomura, “Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters “, ACS Nano. 16, 3280 (2022).

7. Yong Zhang Chi-Hsin Huang, and Kenji Nomura, “Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor“, ACS Appl. Mater. Interface 14, 22252 (2022).

8. Kosuke Matsuzaki, Naoki Tsunoda, Yu Kumagai, Yalun Tang, Kenji Nomura, Fumiyasu Oba, and Hideo Hosono, “Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor“, J. Am. Chem. Soc. (2022).

9. Yong Zhang Chi-Hsin Huang, and Kenji Nomura, “Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses”,Appl. Phys. Lett. 121, 262105 (2022).

 
 

Conference proceedings

  1. K Nomura, “Back-Channel Defect Termination for p-Channel Oxide-TFTs”, SID Symposium Digest of Technical Papers 52, p85-88 (2021). 

  2. K Nomura, “Recent progress of oxide-TFT-based inverter technology”, AMFPD proceedings  (2022). 

  3. K Nomura, “Recent progress of oxide-TFT-based inverter technology”, IMID DIGEST  (2022). 

 

1.     K. Nomura, “Recent progress of oxide-TFT-based inverter technology”, Journal of Information Display (2021)

2.  Hsuan Chang, Chi-Hsin Huang, and Kenji Nomura, “Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film
Transistors and High-Gain Zero-VGS-Load Inverter”, ACS Appl. Electron.Mater. (2021).

3.  Chi-Hsin Huang, Hsuan Chang, Tzu-Yi Yang, Yi-Chung Wang, Yu-Lun Chueh, and KenjiNomura, “Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing”, ACS Appl. Mater.
Interface (2021)

4.   Chi-Hsin Huang, Yalun Tang, Tzu-Yi Yang, Yu-Lun Chueh, and Kenji Nomura,” Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter”, ACS Appl. Mater. Interface (2021).

5.  Yong Zhang Chi-Hsin Huang, and Kenji Nomura,” Voltage Transfer Characteristics of CMOS-Like Inverters for Ambipolar SnO Thin-Film Transistors”, IEEE Electro. Dev. lette. 43, 52 (2022).

 

Conference proceedings

 

 

 

  1. K. Ide, K. Nomura, H. Hosono, and  T. Kamiya, “Electronic Defects in Amorphous Oxide Semiconductors: A Review“, Phys. Status Solidi A 1800372 (2019).

  2. Z.Xu, Y. Yu, I. A. Niaz, Y. Chen, S. Arya, Y. Lei, M. A. R. Miah, J. Zhou, A. C. Zhang, L. Yan, S. Xu, K. Nomura, and Y.-H. Lo, “Discovery of Ionic Impact Ionization (I3) in Perovskites Triggered by a Single Photon”, arXiv:1906.02475 (2019).

  3. .Xu, Y. Yu, I. A. Niaz, Y. Chen, S. Arya, Y. Lei, M. A. R. Miah, J. Zhou, A. C. Zhang, L. Yan, S. Xu, K. Nomura, and Y.-H. Lo, “Frequency- and Power-Dependent Photoresponse of a Perovskite Photodetector Down to the Single-Photon Level“, Nano Lett. 20, 3, 2144-215.(2020)

  4. C.-H. Huang, K. Matsuzaki, and K. Nomura, “Threshold switching of non-stoichiometric CuO nanowire for selector application“, Appl. Phys. Lett. 116, 023503 (2020).

  5. A. W Lee, D. Le, K. Matsuzaki, and K. Nomura, “Hydrogen Defect Termination in SnO for p-channel-TFTs“. ACS Appl. Electron. Mater. 2, 1162-1168 (2020).

  6.  C.-H. Huang, Y. Tang, K. Matsuzaki, and K. Nomura, “Resistive switching memory effects in p-type hydrogen-treated CuO nanowire“, Appl. Phys. Lett. 117, 023503 (2020).

  7. A. W Lee,  Y. Zheng, C.-H. Huang, K. Matsuzaki, and K. Nomura, “Switching mechanism behind the device operation mode in SnO-TFT”, Advanced Electronic Materials 6, 2000742 (2020).

  8. H. Chang, C.-H. Huang, K. Matsuzaki, and K. Nomura, “Back-channel Defect Termination by Sulfur for p-channel Cu2O Thin-film Transistors”, ACS Applied Materials & Interfaces 46, 51581–51588 (2020).

Conference proceedings

 

  1.  K. Nomura, “Recent progress of oxide-Semiconductor-based p-channel TFTs”, SID Symposium Digest of Technical Papers 46, p591 (2015).

  2. A. W Lee, K. Matsuzaki, and K. Nomura, “Hydrogenated  SnO for p-channel-TFTs“. SID Symposium Digest of Technical Papers. P-2 (2020).

  1. Nomura, T. Kamiya, and H. Hosono, “Interface and bulk effects for bias-light illumination instability in amorphous-In-Ga-Zn-O thin-film transistors”, J. Soc. Inf. Display 18, 789 (2010).

  2. Nomura, T. Aoki, K. Nakamura, T. Kamiya, T. Nakanishi, T. Hasegawa, M. Kimura, T. Kawase, M. Hirano, H. Hosono, ”Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors”, Appl. Phys. Lett. 96, 263509 (2010).

  3. Nomura, T. Kamiya, Y. Kikuchi, M. Hirano, H. Hosono, “Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress”, Thin Solid Films 518, 3012 (2010).

  4. Ohta, Y. Sato, T. Kato, S.W. Kim, K. Nomura, Y. Ikuhara, and H. Hosono, “Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal“, Nature Comm. 1, 118 (2010).

  5. Nishio, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO·7Al2O3”, Mater. Sci. Eng. B 173, 37 (2010).

  6. Yabuta, N. Kaji, Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits”, Appl. Phys. Lett. 97, 072111 (2010).

  7. Kamiya, K. Nomura and H. Hosono, “Present status of amorphous InGaZnO thin-film transistors”, Sci. Technol. Adv. Mater. 11, 044305 (2010).

  8. Kamiya, K. Nomura, and H. Hosono, “Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory”, Phys. Stat. Solidi (b) 207, 1698 (2010).

  9. Kimura, T. Kamiya, T. Nakanishi, K. Nomura, and H. Hosono, “Intrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique”, Appl. Phys. Lett. 96, 262105 (2010).

  10. Shinozaki, K. Nomura, T. Katase, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer”, Thin Solid Films 518, 2996 (2010).

  11. H. Lee, K. Kawamura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Steady state photoconductivity of amorphous In-Ga-Zn-O”, Thin Solid Films 518, 3000 (2010).

  12. Kikuchi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing”, Thin Solid Films 518, 3017 (2010).

  13. Kamiya, K. Nomura, and H. Hosono, “Origin of definite Hall voltage and positive slope in mobility donor density relation in disordered oxide semiconductors”, Appl. Phys. Lett. 96, 122103 (2010).

  14. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of atomically flat ScAlMgO4 epitaxial buffer layer and low-temperature growth of high-mobility ZnO films”, Cryst Growth Des. 10, 1084 (2010).

  15. H. Lee, K. Kawamura, K. Nomura, T. Kamiya, and H. Hosono, “Large photoresponse in amorphous In-Ga-Zn-O and origin of reversible and slow decay”, Electrochem. Solid-State Lett. 13, 324 (2010).

  16. Nomura, T. Kamiya, and H. Hosono, “Ambipolar oxide thin-film transistor”, Adv. Mater. 23, 3431 (2011).

  17. Nomura, T. Kamiya, and H. Hosono, “Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects”, Appl. Phys. Lett. 99, 053505 (2011)

  18. Nomura, T. Kamiya, E. Ikenaga, H. Yanagi, K, Kobayashi, and H. Hosono, “Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy”, J. Appl. Phys. 109, 073726 (2011).

  19. Ide, Y. Kikuchi, K. Nomura, M. Kimura, T. Kamiya, and H. Hosono, “Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors”, Appl. Phys. Lett. 99, 093507 (2011).

  20. Chen, MY. Wu, R. Ishihara, K. Nomura, T. Kamiya, H. Hosono, and CIM Beenakker, “Excimer laser crystallization of InGaZnO4 on SiO2 substrate”, J. Mater. Sci. Mater. Electron. 22, 1694 (2011).

  21. Chen, MY. Wu, R. Ishihara, K. Nomura, T. Kamiya, H. Hosono, and CIM Beenakker, “Solid-phase epitaxial growth of (111)-oriented Si film on InGaO3(ZnO)5 buffer layer”, J. Mater. Sci. Mater. Electron. 22, 920 (2011).

  22. Lee, K. Nomura, H. Yanagi, T. Kamiya, and H. Hosono, “Electronic Structure and Photovoltaic Properties of n-Type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunctions”, Electrochem. Solid-State Lett. 14, 346 (2011)

  23. Shao, K. Nomura, T. Kamiya, and H. Hosono, “Operation characteristics of thin-film transistors using very thin amorphous In-Ga-Zn-O channels”, Electrochem. Solid-State Lett. 14, 197 (2011).

  24. H. Lee, K. Nomura, T. Kamiya, and H. Hosono, “Diffusion-limited a-IGZO / Pt schottky junction fabricated at 200oC on flexible substrate”, IEEE Electron Dev. Lett. 32, 1695 (2011).

  25. Abe, N. Kaji, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and Hideo Hosono, “Simple analytical model of on operation of amorphous In-Ga-Zn-O thin-film transistors”, IEEE Trans. Electron Dev. 58, 3463 (2011).

  26. Nomura, T. Kamiya, and H. Hosono, “Stability and high-frequency operation of amorphous In– Ga–Zn–O thin-film transistors with various passivation layers”, Thin Solid Films 520, 3778-3782 (2012).

  27. Kimura, T. Hasegawa, K. Ide, K. Nomura, T. Kamiya, and H. Hosono, “Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor exposed to ozone annealing”, IEEE Electron Dev. Lett. 33, 384 (2012).

  28. Ohta, T. Mizuno, SJ. Zheng, T. Kato, Y. Ikuhara, K. Abe, H. Kumomi, K. Nomura, and H. Hosono, “Unusually Large enhancement of thermopower in an electric field induced two-dimensional electron gas”, Adv. Mater. 24, 740 (2012).

  29. Abe, K. Takahashi, A. Sato, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and Hideo Hosono, “Operation model with carrier-density dependent mobility for amorphous In–Ga–Zn–O thin-film transistors”, Thin Solid Films 520, 3791 (2012).

  30. Lee, K. Nomura, H. Yanagi, T. Kamiya, and H. Hosono, “Photovoltaic properties of n-type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content”, Thin Solid Films 520, 3808 (2012).

  31. Ide, Y. Kikuchi, K. Nomura, M. Kimura, T. Kamiya, and H. Hosono, “Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors”, Thin Solid Films 520, 3787 (2012).

  32. Abe, K. Nomura, T. Kamiya, and H. Hosono, “Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice” Phys. Rev. B Rapid Communications, 86, 081202 (2012).

  33. Ide, K. Nomura, H. Hiramatsu, T. Kamiya, and H. Hosono, “Structural relaxation in amorphous oxide semiconductor”, J. Appl. Phys. 111, 073513 (2012).

  34. Lee, K. Nomura, H. Yanagi, T. Kamiya, E. Ikenaga, T. Sugiyama, K. Kobayashi, and H. Hosono, “Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy”, J. Appl. Phys. 112, 033713 (2012).

  35. H. Lee, K. Nomura, T. Kamiya and H. Hosono, “Metal-semiconductor field-effect transistor made using amorphous In-Ga-Zn-O channel and bottom Pt Schottky contact structure at 200°C”, ECS Solid State Lett. 1, Q8-Q10 (2012).

  36. Kimura, T. Hasegawa, K. Ide, K. Nomura, T. Kamiya, and H. Hosono, “Maximum applied voltage detector using amorphous In–Ga–Zn–O thin-film transistor exposed to ozone annealing”, Solid-State Electronics 75, 74 (2012).

  37. Abe, K. Takahashi, A. Sato, H. Kumomi, K. Nomura, T. Kamiya, J Kanicki, and H. Hosono, “Amorphous In–Ga–Zn–O Dual-Gate TFTs: Current–voltage characteristics and electrical stress instabilities”, IEEE Trans. Electron Dev. 59 1928 (2012).

  38. Nomura, T. Kamiya, and H. Hosono, “Effects of diffusion of hydrogen and oxygen on electrical properties of amorphous oxide semiconductor, In-Ga-Zn-O”, ECS J. Solid State Sci. Technol. 2, 5 (2013).

  39. Hanyu, K. Domen, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono, and T. Kamiya, “Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors”, Appl. Phys. Lett. 103, 2012114 (2013).

  40. Watanabe, D.-H. Lee, I. Sakaguchi, K. Nomura, T. Kamiya, H. Haneda, H. Hosono, and N. Ohashi, “Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere”, Appl. Phys. Lett. 103, 201904 (2013).

  41. Hanyu, K. Abe, K. Domen, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono, and T. Kamiya, “Effects of high-temperature annealing on operation characteristics of a-In-Ga-Zn-O TFTs.” J. Disp. Technol. 10, 979 (2014).

  42. Yamada, K. Nomura, K. Abe, S. Takeda, and H. Hosono, “Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology” Appl. Phys. Lett. 105, 133503 (2014).

  43. Miyase, K. Watanabe, I. Sakaguchi, N. Ohashi, K. Domen, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono and T. Kamiya, “Roles of hydrogen in amorphous oxide semiconductor In-Ga-Zn-O: Comparison of conventional and ultra-high-vacuum sputtering;”, ECS J. Solid State Sci. Technol. 3, Q3085 (2014).

 

Conference proceedings

 

  1. Nomura, T. Kamiya, M. Hirano, H. Hosono, “How we can improve TFT characteristics and stability for a-IGZO-TFTs”, Proc. the10th IMID2010, 31-1 (2010).

  2. Yamada, K. Nomura, S. Takeda, and H. Hosono, “Novel approach for preventing atmosphere effects on Vth stability of a-In-Ga-Zn-O thin film transistor by glass sealing”, Proc. IDW’11, p1633 (2011).

  3. Hosono, K. Nomura, and T. Kamiya, “An Ambipolar oxide TFT” SID Symposium Digest of Technical Papers 42, p486 (2011).

  4. Nomura, T. Kamiya, and H. Hosono, “Bias stability for a-In-Ga-Zn-O-TFTs: Origin of threshold voltage instability and the role of thermal annealing and passivation” Proc. 18th International Display Workshops (IDW ’11), p587 (2011).

  5. Hasegawa, M. Kimura, K. Ide, K Nomura, T. Kamiya, and H. Hosono, “Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor fabricated by high oxygen partial pressure sputtering”, Proc. 19th International Workshop on Active-Matrix Flat Panel Displays and Devices (AM-FPD ’12), p41 (2012).

  6. Inoue, T. Hasegawa, T. Nakanishi, M. Kimura, K. Nomura, T. Kamiya, and H Hosono, “Characteristic shift of a CTFT inverter using n-type IGZO and p-type F8T2 TFTs after temperature and operation stresses” Proc. IEEE International Meeting Future of Electron Devices, Kansai (IMFEDK), p66 (2012).

  7. Kamiya, K. Nomura, and H. Hosono, “Present Status, Knowledge and Issues of Oxide Semiconductor Technology”, Proc. 19th International Display Workshops (IDW ’12), p405 (2012).

  8. Nomura, T. Kamiya, and H. Hosono, “Recent progress in oxide based p-channel TFT and complementary inverter”, Proc. The 12th International Meeting on Information Display (IMID2012), p322 (2012).

  9. Kamiya, K. Ide, K. Nomura, H. Kumomi, and H. Hosono, “Structural relaxation, crystallization, and defect passivation in amorphous In-Ga-Zn-O; Proc. 20th International Display Workshops (IDW ’13) p478 (2013).

  10. Hasegawa, M. Inoue, T. Matsuda, M. Kimura, K. Nomura, T. Kamiya, and H. Hosono, “3-D stacked complementary TFT devices using n-Type a-IGZO and p-Type F8T2 TFTs – comparison between stacked and sided configurations”, Proc. AMD6-3L (2013).

  11. Kamiya, K. Nomura, and H. Hosono, “Electronic structure, carrier transport, defects and impurities in amorphous oxide semiconductor”, SID Symposium Digest of Technical Papers 44, p11 (2013).

  12. Kimura, T. Hasegawa, M. Inoue, K. Nomura, T. Kamiya, and H. Hosono, “3-D stacked complementary TFT devices using n-type a-IGZO and p-type F8T2 TFTs -operation confirmation of NOT and NAND logic circuits-”, SID Symposium Digest of Technical Papers 44, p995 (2013).

  13. Kimura, T. Hasegawa, T. Matsuda, K. Ide, K. Nomura, T. Kamiya, and H. Hosono, “Light irradiation and applied voltage history sensors using amorphous In-Ga-Zn-O thin-film transistors exposed to ozone annealing and fabricated under high oxygen pressure”, Digest of AM-FPD2014 5-3, p319 (2014).

  1.  Kamiya, S. Aiba, M. Miyakawa, K. Nomura, S. Matsuishi, K. Hayashi, K. Ueda, M. Hirano, and H. Hosono, “Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO·7A2O3”, Chem. Mater. 17, 6311 (2005).

  2. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single crystalline thin film”, Thin Solid Films 486, 28 (2005).

  3. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4”, Thin Solid Films 486, 38 (2005).

  4. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors towards high-performance flexible thin-film transistors”, Jpn. J. Appl. Phys. 45, 4303 (2006).

  5. Kamiya, H. Hiramatsu, K. Nomura, and H. Hosono, “Device applications of transparent oxide semiconductors: excitonic blue LED and transparent flexible TFT”, J. Electroceram. 17, 267 (2006).

  6. Kamiya, Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, M. Hirano, and H. Hosono, “Self-adjusted three-dimensional lattice-matched buffer layer for growing ZnO epitaxial film: homologous series layered oxide, InGaO3(ZnO)5”, Cryst. Growth Des. 6, 2451 (2006).

  7. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering”, Appl. Phys. Lett. 89, 112123 (2006).

  8. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Koumoto, “High electrical conductivity of layered cobalt oxide Ca3Co4O9 epitaxial films grown by topotactic ion-exchange method”, Appl. Phys. Lett. 89, 032111 (2006).

  9. Sugiura, H. Ohta, K. Nomura, H. Yanagi, M. Hirano, H. Hosono, and K. Koumoto, “Epitaxial Film Growth and Superconducting Behavior of Sodium-Cobalt Oxyhydrate, NaxCoO2yH2O (x~0.3, y~1.3)”, Inorg. Chem. (communication) 45, 1894 (2006).

  10. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, H. Hiramatsu, M. Hirano, and H. Hosono, “Field induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3”, Appl. Phys. Lett. 88, 092106 (2006).

  11. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Koumoto, “Fabrication and thermoelectric properties of layered cobaltite, gamma-Sr0.32Na0.21CoO2 epitaxial films”, Appl. Phys. Lett. 88, 082109 (2006).

  12. Matsuzaki, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor”, Thin Solid Films 496, 37 (2006).

  13. Y Ogo, K Nomura, H Yanagi, H Ohta, T Kamiya, M Hirano, and H Hosono, ”Growth and structure of heteroepitaxial thin films of homologous compounds RAO3(MO)m by reactive solid-phase epitaxy: applicability to a variety of materials and epitaxial template layers”, Thin Solid Films 496, 64 (2006).

  14. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations”, Phys. Rev. B 75, 035212 (2007).

  15. Hayashi, M. Ofuji, N. Kaji, K. Takahashi, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, ”Circuits using uniform TFTs based on amorphous In–Ga–Zn– O”, J. Soc. Inf. Display 15, 915 (2007).

  16. Sugiura K, H. Ohta, K. Nomura, T. Saito, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, “Thermoelectric properties of the layered Ca3Co4O9 epitaxial films fabricated by topotactic ion-exchange method”, Mater. Trans. 48, 2104 (2007).

  17. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system”, Appl. Phys. Lett. 90, 242114 (2007).

  18. Ogo, H. Yanagi, T. Kamiya, K. Nomura, M. Hirano, and H. Hosono, “Epitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3FeTi2O10”, J. Appl. Phys. 101, 103714 (2007).

  19. Ofuji, K. Abe, H. Shimizu, N. Kaji, R. Hayashi, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Fast thin-film transistor circuits based on amorphous oxide semiconductor” IEEE Elect. Dev. Lett. 28, 273 (2007).

  20. Ohta, S. Kim, Y. Mune, T. Mizoguchi, K. Nomura, S. Ohta, T. Nonomura, Y. Nakanishi, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, “Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3”, Nature Mater. 6, 129 (2007).

  21. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing”, Appl. Phys. Lett. 93, 1921073 (2008).

  22. Nomura, T. Kamiya, H. Ohta, K. Shimizu, M. Hirano, and H. Hosono, “Relationship between nonlocalized tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O”, Phys. Stat. Solidi (a) 205,1910 (2008).

  23. Nomura, T Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, “Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy”, Appl. Phys. Lett. 92, 202117 (2008).

  24. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor”, Appl. Phys. Lett. 93, 202107 (2008).

  25. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono, “Zn-ln-O based thin-film transistors: Compositional dependence”, Phys. Stat. Solidi (a) 205, 1915 (2008).

  26. Ogo, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous Sn-Ga-Zn-O channel thin-film transistors”, Phys. Stat. Solidi (a) 205, 1920 (2008).

  27. Kamiya, K. Tajima, K. Nomura, H. Yanagi, and H. Hosono, “Interface electronic structures of zinc oxide and metals: First-principle study”, Phys. Stat. Solidi (a) 205, 1929 (2008).

  28. Nishio, K. Nomura, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication and transport properties of 12CaO·7Al2O3 (C12A7) electride nanowire” Phys. Stat. Solidi (a) 205, 2047 (2008).

  29. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “P-channel thin-film transistor using p-type oxide semiconductor, SnO”, Appl. Phys. Lett. 93, 32113 (2008).

  30. Mine, H Yanagi, K Nomura, T Kamiya, M Hirano, and H. Hosono, “Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistor”, Thin Solid Films 516, 5790 (2008).

  31. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes”, Thin Solid Films 516, 5899 (2008).

  32. Hosono, K. Nomura, Y. Ogo, T. Uruga, and T. Kamiya, “Factors controlling electron transport properties in transparent amorphous oxide semiconductors”, J. Non-Cryst. Sol. 354, 796 (2008).

  33. -H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.-C. Wu, “Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states”, Appl. Phys. Lett. 92, 133503 (2008).

  34. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hosono, “Trap densities in amorphous InGaZnO4 thin-film transistors”, Appl. Phys. Lett. 92, 133512 (2008).

  35. K. Jayaraj, K. J. Saji, K. Nomura, T. Kamiya, and H. Hosono, “Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application”, J. Vac. Sci. Technol. 26, 495 (2008).

  36. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Amorphous oxide channel TFTs”, Thin Solid Films 516, 1516 (2008).

  37. J. Saji, M. K. Jayaraj, K. Nomura, T. Kamiya, and H. Hosono, “Optical and carrier transport properties of cosputtered Zn-In-Sn-O films and their applications to TFTs”, J. Electrochem. Soc. 155, H390 (2008).

  38. Ueda, T. Maeda, K. Nakayashiki, K. Goto, Y. Nakach, H. Takashima, K. Nomura, K. Kajihara, and H. Hosono, “Photoluminescence from epitaxial films of perovskite-type alkaline-earth stannates”, Appl. Phys. Exp. 1, 015003 (2008).

  39. -C. Fung, C.-S. Chuang, K. Nomura, H.-P. D. Shieh, H. Hosono, and J. Kanicki, “Photofield-effect in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors”, J. Info. Display 9, 21 (2008).

  40. Kamiya, K. Nomura, M. Hirano, and H Hosono, “Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x: Optical analyses and first‐principle calculations”, Phys. Stat. Solidi (c) 5, 3098 (2008).

  41. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of ScAlMgO4 epitaxial thin films using ScGaO3(ZnO)m buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth”, Thin Solid Films 516, 5842 (2012).

  42. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Origins of threshold voltage shifts in room temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors”, Appl. Phys. Lett. 95, 013502 (2009).

  43. Sato, M. Shimada, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure”, Thin Solid Films 518, 1309 (2009).

  44. Kamiya, K. Nomura, and H. Hosono, “Electronic structures above mobility edges in crystalline and amorphous In-Ga-Zn-O: Percolation conduction examined by analytical model”, J. Display Technol. 5, 462 (2009).

  45. Ohta, Y. Masuoka, R. Asahi, T. Kato, Y. Ikuhara, K. Nomura, and H. Hosono, “Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO·7Al2O3 glass gate insulator”, Appl. Phys. Lett. 95, 113505 (2009).

  46. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, “Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application”, Phys. Stat. Solidi (a) 206, 2187 (2009).

  47. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, “Effects of post-annealing on (110) Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor”, Phys. Stat. Solidi (a) 206, 2192 (2009).

  48. Kamiya, K. Nomura, and H. Hosono, “Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping”, J. Display Technol. 5, 273 (2009).

  49. Kamiya, K. Nomura, and H. Hosono, “Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states, defects and doping”, Phys. Stat. Solidi (a) 206, 860 (2009).

  50. Omura, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “First-principles study of native point defects in crystalline indium gallium zinc oxide”, J. Appl. Phys. 105, 093712 (2009).

  51. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4”, Mater. Sci. Eng. B 161, 66 (2009).

  52. Sugiura, H. Ohta, S. Nakagawa, R. Huang, Y. Ikuhara, K. Nomura, H. Hosono, and K. Koumoto, “Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy”, Appl. Phys. Lett. 94, 152105 (2009).

  53. Sato, M. Shimada, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor”, Appl. Phys. Lett. 94, 133502 (2009).

  54. Sugiura, H. Ohta, Y. Ishida, R. Huang, T. Saito, Y. Ikuhara, K. Nomura, H. Hosono, and K. Koumoto, “Structural transformation of Ca-arrangements and carrier transport properties in Ca0.33CoO2 epitaxial films”, Appl. Phys. Expr. 2, 035503 (2009).

 

Conference proceedings

 

  1. Hosono, T. Kamiya, and K. Nomura, “Transparent high- performance FET using amorphous oxide semiconductors”, Digest of Technical papers of AM-LCD, p83 (2005).

  2. Sugiura, H. Ohta, K. Nomura, T. Saito, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, “Thermoelectric properties of epitaxial films of layered cobalt oxides fabricated by topotactic ion-exchange methods, 25th International Conference on Thermoelectrics (ICT ’06), p99 (2006).

  3. Ofuji, K. Abe, N. Kaji, R. Hayashi, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Integrated circuits based on amorphous indium-gallium-zinc-oxide-channel thin-film transistors”, ECS Transactions 3, p293 (2006).

  4. Kumomi, N. Kaji, H. Yabuta, M. Sano, K. Abe, T. Den, K. Nomura, T. Kamiya, and H. Hosono, “Amorphous oxide channel TFTs fabricated with RF sputtering method”, Proc. International TFT Conference 2006, p176 (2006).

  5. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor”, Mater. Res. Soc. Symp. Proc. 928, 0928-GG10-04 (2006).

  6. Abe, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous In-Ga-Zn-O based TFTs and circuits”, Proc. IDW ’07, AMD9-2 (2007).

  7. Abe, M. Ofuji, H. Shimizu, K. Takahashi, N. Kaji, A. Sato, Y. Tateishi, H. Yabuta, R. Hayashi, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Fundamental analysis on the on-operation of an amorphous In-Ga-Zn-O based gated four-probe TFT”, ITC 2008 (2008).

  8. T-C. Fung, C.-S. Chuang, B.G. Mullins, Nomura, T. Kamiya, H.P.D. Shieh, and H. Hosono, “Photofield-effect in amorphous InGaZnO TFTs”, Digest Tech. Papers IMID 2008, p1208 (2008).

  9. T-C. Fung, Nomura, H. Hosono and J. Kanicki, “PLD Amorphous In-Ga-Zn-O TFTs for future optoelectronics”, Digest of Technocal Papers, SID 2008, p117 (2008).

  10. -S. Chuang, T.-C. Fung, B. G. Mullins, K. Nomura, T. Kamiya, H.-P. D. Shieh, H. Hosono, and J. Kanicki, “Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays”, Proc. SID International Symposium (SID 2008), p13 (2008).

  11. H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.C. Wu, “Modeling of amorphous oxide semiconductor thin film transistors and subgap density of states”, SID Symposium Digest of Technical Papers 39, p1277 (2008).

  12. Hayashi, A.Sato, M. Ofuji, K.Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Improved amorphous In-Ga-Zn-O TFTs, SID Symposium Digest of Technical Papers 39, p621 (2008).

  13. Kamiya, K. Nomura, and H. Hosono, “What have been clarified for amorphous oxide semiconductors?”, Int’l Display Manufacturing Conference (IDMC)/ 3D Systems and Applications (3DSA) / Asia Display 2009, Thu-S22-03 (2009).

  14. Kamiya, K. Nomura, and H. Hosono, “Defects and doping in amorphous oxide semiconductor studied by first-principles calculations” Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics, 2B-I (2009).

  15. Kamiya, K. Nomura, and H. Hosono, “Impact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor”, Proc. 16th International Display Workshops (IDW’09), p1673 (2009).

  16. Kamiya, K. Nomura, and H. Hosono, “Amorphous oxide semiconductor: Factors determining TFT performance and stability”, Proc. IMID2010, p322 (2009).

  17. Omura, T. Iwasaki, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “First- principles calculation for effect of impurities on electronic states of amorphous In-Ga-Zn-O”, Mater. Res. Soc. Symp. Proc., p1109 (2009).

  1. Nomura, Y. Ishikawa, and N. Shibata, “Crystallinity of AlN film deposited by reactive sputtering method”, J. Ceram. Soc. Jpn. 102, 1079 (1995).

  2. Nomura, S. Kawai, and N. Shibata, “Analysis of reaction at Au/Si3N4 interface by XPS-SIMS”, J. Ceram. Soc. Jpn. 104, 1167 (1996).

  3. Nomura, T. Takeda, N. Shibata, and M. Maeda, “In-situ Observation of crystallization process of ferroelectric thin films by Raman microspectroscopy”, Jpn. J. Appl. Phys. 39, 5247 (2000).

  4. Nomura, N. Shibata, and M. Maeda, “Fabrication of barium titanite thin films by potentiostatic electrochemical deposition”, J. Ceram. Soc. Jpn. 109, 915 (2001).

  5. Nomura, N. Shibata, and M. Maeda, “Orientation control of zinc oxide thin films by pulsed current electrolysis”, J. Cryst. Growth 235, 224 (2002).

  6. Nomura, N. Shibata, and M. Maeda, “Preparation of zinc oxide thin films by pulsed current electrolysis”, J. Electrochem. Soc. 149, F76 (2002).

  7. Nomura, H. Ohta, K. Ueda, M. Orita, M. Hirano, and H. Hosono, “Novel film growth technique of single crystalline In2O3(ZnO)m (m=integer) homologous compound”, Thin Solid Films 411, 147 (2002).

  8. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Electron transport in InGaO3(ZnO)m (m = integer) studied using single-crystalline thin films and transparent MISFETs”, Thin Solid Films 445, 322 (2003).

  9. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin film transistor fabricated in single-crystalline transparent oxide semiconductor”, Science 300, 1269 (2003).

  10. Ohta, K. Nomura, H. Hiramatsu, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Frontier of transparent oxide semiconductors”, Solid-State Electronics 47, 2261 (2003).

  11. Ohta, K. Nomura, M. Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara, and H. Hosono, “Single crystalline films of the homologous series InGaO3(ZnO)m grown by reactive solid-phase epitaxy”, Adv. Funct. Mater. 13, 139 (2003).

  12. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room temperature fabrication of transparent flexible thin film transistors using amorphous oxide semiconductors”, Nature 432, 488 (2004).

  13. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films”, Appl. Phys. Lett. 85, 1993 (2004).

  14. Nomura, H. Ohta, T. Suzuki, C. Honjyo, K. Ueda, T. Kamiya, M. Orita, Y. Ikuhara, M. Hirano, and H. Hosono, ”Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid phase epitaxy”, J. Appl. Phys. 95, 5532 (2004).

  15. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono,” All oxide transparent MISFET using high-k dielectrics gate”, Microelectron. Eng. 72, 294 (2004).

  16. Kamiya, H. Ohta, H. Hiramatsu, K. Hayashi, K. Nomura, S. Matsuishi, K. Ueda, M. Hirano, and H. Hosono, “Natural nanostructures in ionic semiconductors”, Microelectron Eng. 73-4, 620 (2004).

  17. Kamiya, H. Ohta, M. Kamiya, K. Nomura, K. Ueda, M. Hirano, and H. Hosono, “Li-doped NiO epitaxial thin film with atomically flat surface”, J. Mater. Res. 19, 913 (2004).

  18. Ohta, T. Kambayashi, K. Nomura, M. Hirano, K. Ishikawa, H. Takezoe, and H. Hosono, “Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel”, Adv. Mater. 16, 312 (2004).

 

Conference proceedings

 

  1. Ohta, M. Orita, H. Hiramatsu, K. Nomura, M. Miyakawa, K. Ueda, M. Hirano, and H. Hosono, “Frontier of transparent conductive oxides“, Proceedings of CIMTEC 2002 / 10th International Ceramics Congress and 3rd Forum on New Materials, Ed. By P. Vincenzini Part D, p983 (2002).

  2. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, and H. Hosono, “Reactive solid-phase epitaxy ~ A novel growth method for single-crystalline”, Mater. Res. Soc. Symp. Proc. 747, V2.5 (2003).

  3. Nomura, H.Ohta, K.Ueda, T.Kamiya, M.Hirano, and H. Hosono, ”Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film”, Mater. Res. Soc. Symp. Proc. 747, V2.6 (2003).

  4. Ohta, K. Nomura, S. W. Kim, S. Ohta, K Koumoto, M Hirano, and H. Hosono, “Solid-phase epitaxial film growth of thermoelectric oxide semiconductor, NaxCoO2”, The 23rd International Conference on Thermoelectrics proceedings (2004).

  5. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara, and H. Hosono, “High-quality epitaxial film growth of transparent oxide semiconductors”, J. Ceram. Soc. Jpn. Suppl. 112, S602 (2004).

  6. Ohta, K. Nomura, H. Hiramatsu, T. Kamiya, M. Hirano, and H. Hosono, “Epitaxial growth and application of transparent oxide semiconductors”, Electrochem. Soc. Proc. (2004).

  7. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport of extended and localized states in InGaO3(ZnO)5”, Mater. Res. Soc. Symp. Proc. 811, E2.9.1 (2004).