{"id":101,"date":"2020-01-30T08:20:58","date_gmt":"2020-01-30T08:20:58","guid":{"rendered":"http:\/\/team.ucsd.edu\/?page_id=101"},"modified":"2025-06-13T12:54:30","modified_gmt":"2025-06-13T12:54:30","slug":"conferences-and-talks","status":"publish","type":"page","link":"https:\/\/team.ucsd.edu\/?page_id=101","title":{"rendered":"CONFERENCES AND TALKS"},"content":{"rendered":"\t\t
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2021-<\/a><\/div>\n\t\t\t\t\t\t\t\t\t
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2014-2010<\/a><\/div>\n\t\t\t\t\t\t\t\t\t
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2021-<\/div>\n\t\t\t\t\t

Invited talks<\/strong><\/h2>

  1. K. Nomura, \u201cBack-channel surface defect for p-channel oxide TFTs<\/em>\u201d, 2021 the SID International Symposium, USA (2021).<\/h4><\/li>

  2. K. Nomura, \u201cp-type oxide TFT development toward oxide CMOS technology\u201d, 2021 International Conference on Display Technology, China (2021).<\/em>“,\u00a0<\/h4><\/li>

  3. K. Nomura, \u201cHow to improve P-channel Oxide-TFT s<\/em>“,\u00a0The 6th International Conference on Advanced Electromaterials (ICAM), (2021).<\/span><\/h4><\/li>

  4. K. Nomura, \u201cA ultra-thin channel oxide-TFT for next-generation inverter circuit\u201d, 2022 International Conference on Display Technology”, China, July (2022).<\/em>\u00a0<\/h4><\/li>

  5. K. Nomura, \u201cRecent advancement of p-channel oxide-TFT\u00a0<\/i>toward logic gate technology\u201d, Samsung Form, May,(2022).<\/em><\/h4><\/li>

  6. K. Nomura, \u201cRecent progress of oxide TFT based inverter technology<\/i>“, THE 29th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, Kyoto, July (2022).<\/h4><\/li>

  7. K. Nomura, \u201cRecent progress of oxide TFT based inverter technology<\/i>“, 22nd International Meeting on Information Display (IMID)\u00a0 (2022).<\/h4><\/li>

  8. K. Nomura, \u201cChallenges for High-Performance Oxide-TFT Based Inverters”, 242th\u00a0 ECS meeting TFT 16, Atlanta, US, April\u00a0 (2022).<\/h4><\/li>

  9. K. Nomura, \u201cRecent advances and challenges in Oxide-TFT Inverter technology”, TCM-TOEO 2022, Greece, October\u00a0 (2022).<\/h4><\/li>

  10. K. Nomura, \u201cCost-effective Low-temperature-processed Oxide-TFTs”,\u00a02022 International Conference on Display Technology, China (2023).<\/em><\/h4><\/li>

  11. K. Nomura, \u201cProgress of p-channel oxide-TFT development and how we improve the performances”, 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).<\/em><\/h4><\/li>

  12. K. Nomura, \u201cRecent advancement in Oxide TFT technology “, The 7th GP-MS Symposium, Sendai Japan , Nov 29, 2023 \u00a0(2023).<\/em><\/h4><\/li>

  13. K. Nomura, “Energy efficient oxide-TFT technology for next-generation electronics”, ICAMD2023, Korea December 5th (2023).<\/h4><\/li>

  14. K. Nomura, “Recent Progress in\u00a0 Oxide Thin-Film Transistor Technology”, ITC 2024 , Korea March<\/em> 27-29, 2024, (2024).<\/h4><\/li>

  15. K. Nomura, “Oxide-TFT technology for next-generation sustainable electronics<\/span><\/span>“, ISPSA 2024 , Korea June<\/em> 4th, 2024, (2024).<\/h4><\/li>

  16. K. Nomura, “Recent advances in Oxide-Thin film transistor technology”, KJF 2024 , Korea, August 30th\u00a0 (2024).<\/h4><\/li>

  17. K. Nomura, “Recent advances in oxide-TFT technology for next-generation sustainable electronics”, SSDM 2024, Japan September 2nd\u00a0 (2024).<\/h4><\/li>

  18. K. Nomura, “Advances in Oxide Thin-Film Transistor Based Inverter Technology”, ECS Prim 2024, USA October 8th\u00a0 (2024).<\/h4><\/li>

  19. K. Nomura, “Recent advances in oxide-TFT technology for next-generation sustainable electronics”, ECS Prim 2024, USA October 8th\u00a0 (2024).<\/h4><\/li>

  20. K. Nomura, “Recent advances in oxide-TFT technology for circuit allocations”, 11th Workshop on Transparent Oxide Materials for Optics and Electronics, Japan January 24th\u00a0 (2025).<\/h4><\/li>

  21. K. Nomura, “Recent Advances in Oxide-TFT Inverter Technology”, ICDT 2025, China, March 23rd\u00a0 (2025).<\/h4><\/li>

  22. K. Nomura, “Wide-bandgap Gallium oxide TFT technology for next-generation sustainable electronics”19th International Thin-Film Transistor Conference (ITC 2025)”, Japan, March 26th\u00a0 (2025).<\/h4><\/li>

  23. K. Nomura, “Oxide-TFT-based circuit and device applications for sustainable electronics”, EM-nano 2025, Japan, June 14th\u00a0 (2025).<\/h4><\/li><\/ol>

    \u00a0<\/h2>

    Presentations<\/strong><\/h2>

    1. H. Chang, and K. Nomura, “Development of high-performance p\u2011channel oxide-Thin-Film Transistors using Cu2O channel”, CMRR Spring review 2021, UCSD, San Diego, (2021).<\/h4><\/li>

    2. Y. Zheng, A. Lee, C.H. Huang, and K. Nomura, ” Control of Transistor Operation Modes for SnO-TFT and Circuit Application”. 63RD ELECTRONIC MATERIALS CONFERENCE June 23-25 (2021).<\/h4><\/li>

    3. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory and
      Inhibitory Response enabled by Ambipolar Oxide Transistor “. CMRR Fall review 2021, UCSD, San Diego, (2021)<\/h4><\/li>

    4. \u00a0Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed 2D Oxide Thin-Film Transistor\u00a0“. CMRR Spring review 2022, UCSD, San Diego, (2022)<\/h4><\/li>

    5. Y. Tang, and K. Nomura, “Vacuum-Free Liquid-Metal-Printed Ultra-Thin ITO-Thin-Film Transistor”. 242th\u00a0 ECS meeting TFT 16 (2022).<\/h4><\/li>

    6. C.H. Huang, and K. Nomura, “Reconfigurable Artificial Synapses with Excitatory an Inhibitory Response enabled by Ambipolar Oxide Transistor “. 2023 ULSIC vs. TFT Conference, Hokkaido, May (2023).<\/em><\/h4><\/li>

    7. Y. Zheng, C.H. Huang, and K. Nomura, “Control of ambipolar operation modes and Complementary Circuit Application in SnO-TFT”. CMRR Fall review 2023, UCSD, San Diego, (2023).<\/h4><\/li>

    8. C.H. Huang, and K. Nomura, “Atomically Thin SnO-Based p-Channel Thin-Film Transistor and Low-Power Complementary Inverter”. MRS Fall meeting\u00a0 (2024).<\/h4><\/div><\/li>

    9. K. Matsuzaki, C.-W. Chang, Y. Tang, T. Nagafuji, N.Tsunoda, Y. Kumagai K. Nomura, F.Oba, and H. Hosono, “Isovalent Alkali Metal Doping as Shallow Complex Acceptors in Monovalent Copper Based Semiconductors”. MRS Spring meeting (2025).<\/h4><\/li><\/ol><\/div>\n\t\t\t\t\t\t\t\t\t
      2020-2015<\/div>\n\t\t\t\t\t

      Invited talks<\/strong><\/h2>

      1. K.Nomura, \u201cRecent Progress of Oxide-Semiconductor-Based P-channel TFTs<\/em>\u201d, 2015 SID International Symposium, 39.3, San Jose, USA (2015).<\/h4><\/li>

      2. C.H. Huang and A. W Lee, and\u00a0K. Nomura, \u201cArtificial Neural and Optical-neural Synaptic Device for Neuromorphic Computing<\/em>“, Qualcomm fellow hip finalist presentation, Qualcomm Headquarter, San Diego, 4\/3\/2019 (2019)\u00a0<\/h4><\/li>

      3. K.Nomura, \u201cP-channel Oxide-TFT Technology for Next Generation Flexible Electronics<\/em>“, The 5th<\/span>\u00a0UCSD-NSYSU Bilateral Research Symposium, UCSD, San Diego, 3\/20\/2019. (2019).\u00a0<\/h4><\/li>

      4. K.Nomura, \u201cDefect termination for<\/em>\u00a0P-channel Oxide-TFT\u00a0<\/em>“, Fujiwara seminar (Atami, Japan, Oct. 2019) (2019).\u00a0<\/h4><\/li>

      5. K.Nomura, Frontier center seminar, Tokyo Institute of Technology (2019).\u00a0<\/h4><\/li>

      6. K.Nomura, \u201cHow We Reduce Subgap Defect toward High-performance P-channel Oxide TFTs<\/em>“, The 5th<\/span> ICAE 2019 (Jeju, Korea, Nov. 2019) (2019).<\/h4><\/li>

      7. K.Nomura, \u201cFundamental and Recent Progress in p-Channel Oxide-TFT Development (Tutorial)<\/em>“, IMID 2020 INTERNATIONAL MEETING ON INFORMATION DISPLAY – ONLINE CONFERENCE (Korea, August 25-28. 2020) (2020).\u00a0<\/h4><\/li>
      8. \u00a0K.Nomura,\u00a0\u201cHydrogen defect termination for p-channel SnO-TFT<\/em>“, IMID 2020 INTERNATIONAL MEETING ON INFORMATION DISPLAY – ONLINE CONFERENCE (Korea, August 25-28. 2020) (2020).\u00a0<\/span><\/li><\/ol>

        Presentations<\/strong><\/h2>

        1. K.Nomura, \u201cOxide semiconductor for next generation electronics<\/em>“, CMRR Fall review 2018, UCSD, San Diego, 11\/22\/2018 (2018).\u00a0<\/h4><\/li>

        2. C.H. Huang, and\u00a0K. Nomura, \u201cMetal Oxide Nanowire for Next Generation Electronic Devices<\/em>“, CMRR spring review 2019, UCSD, San Diego, 3\/14\/2019 (2019).<\/h4><\/li>

        3. C.H. Huang, and\u00a0K. Nomura, \u201cResistive Switching Memory Effects in p-Type Cu2<\/span>O Nanowire<\/em>\u201d, CMRR Fall review 2019, UCSD, San Diego, 10\/18\/2019 (2019).\u00a0<\/h4><\/li>

        4. C.-H. Huang, and\u00a0K. Nomura, \u201cGate-tunable memristor using two-dimensional SnOx nanosheet<\/em>\u201d, 50th IEEE Semiconductor Interface Specialists Conference (SISC), December 12-14\/2019 (2019).\u00a0<\/h4><\/li>

        5. A. W. Lee, and\u00a0K. Nomura, \u201cHydrogenated SnO based p-channel TFTs<\/em>\u201d, CMRR Fall review 2019, UCSD, San Diego, 10\/18\/2019 (2019).\u00a0<\/h4><\/li>

        6. A. W. Lee, K. Matsuzaki and\u00a0K. Nomura, \u201cHydrogenated SnO for p-channel oxide thin film transistor\u00a0<\/em>\u201d, 2020 SID International Symposium – ONLINE CONFERENCE (August 3-7. 2020) (2020).\u00a0<\/h4><\/li>

        7. C.-H. Huang, H. Chang, T.-Y. Yang, Y.-C. Wang, Y.-L. Chueh and K. Nomura,\u00a02D-Oxide Memtransistor for Neuromorphic Computing, CMRR Fall review 2020, UCSD, San Diego, 10\/29\/2019 (2020).\u00a0<\/h4><\/li>

        8. C.H. Huang, and\u00a0K. Nomura, \u201cMetal Oxide Nanowire for Next Generation Electronic Devices<\/em>“, MRS spring meeting (2020).\u00a0<\/h4><\/div><\/li><\/ol><\/div>\n\t\t\t\t\t\t\t\t\t
          2014-2010<\/div>\n\t\t\t\t\t
          \n

          Invited talks<\/strong><\/h2>\n<\/div>\n
            \n
          1. \n

            Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cImprovement of TFT characteristics and stability for a-In-Ga-Zn-O \u2013TFT by low-temperature annealing<\/em>\u201d, The 2010 Mater. Res. Soc. Fall Meeting (MRS2010 Fall meeting), Boston, USA (2010).<\/h4>\n<\/li>\n
          2. \n

            Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cHow we can improve TFT characteristics and stability for a-IGZO-TFTs<\/em>\u201d, The 10th Int. Meeting on Inf. Display (IMID2010), Seoul, Korea (2010).<\/h4>\n<\/li>\n
          3. \n

            Nomura<\/u><\/strong>, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, \u201cDefect structure and stabilization of a-In-Ga-Zn-O based TFTs<\/em>\u201d International workshop on Transparent oxide semiconductors 2010 (TAOS2010), Yokohama, Japan (2010).<\/h4>\n<\/li>\n
          4. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cWhy is amorphous oxide semiconductor expected for next-generation displays?<\/em>\u201d, International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE2010) BA02, Jeju, Korea (2010\/11\/21-24) (2010).<\/h4>\n<\/li>\n
          5. \n

            Ohta, K. Sugiura, K. Koumoto, K. Nomura, H. Hiramatsu, M. Hirano and H. Hosono, \u201cHeteroepitaxy of Complex Oxides with Natural Superlattice Structure<\/em>\u201d, Mater. Res. Soc. Spring Meeting, San Francisco, USA (2010\/4\/6) (2010).<\/h4>\n<\/li>\n
          6. \n

            Yanagi, K. Nomura<\/u><\/strong>, H. Hiramatsu, Y. Toda, T. Kamiya, H. Hosono, \u201cElectronic Structures and Energy Band Lineup of Transparent Conducting Materials Studied by Photoelectron Spectroscopy<\/em>\u201d 12th<\/span> International Ceramics Congress and the 5th<\/span> Forum on New Materials (CIMTEC) FI-2:IL26, Montecatini Terme, Italy, (2010\/6\/13-18) (2010).<\/h4>\n<\/li>\n
          7. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cWhy amorphous oxide semiconductors have superior performances than amorphous silicon<\/em>\u201d,12th<\/span> International Ceramics Congress and the 5th Forum on New Materials (CIMTEC) FI-1:IL11, Montecatini Terme, Italy, (2010\/6\/13-18) (2010).<\/h4>\n<\/li>\n
          8. \n

            Nomura<\/u><\/strong>, H. Hosono, \u201cTransparent amorphous oxide semiconductor (TAOS) and display application: Present status<\/em>\u201d, The 20th<\/span> Fine tech JAPA, Tokyo (20104\/16) (2010).<\/h4>\n<\/li>\n
          9. \n

            Nomura<\/u><\/strong>, \u201cOxide semiconductor technology (II) TFT stability:<\/em>\u201d, an open seminar for Samsung Electronics Co. Ltd, Giheung, Korea (2011).<\/h4>\n<\/li>\n
          10. \n

            Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cBias stability for a-In-Ga-Zn-O-TFTs: Origin of threshold voltage instability and the role of thermal annealing and passivation<\/em>\u201d, 18th International Display Workshops (IDW ’11), Nagoya, Japan.<\/h4>\n<\/li>\n
          11. \n

            Nomura<\/u><\/strong>, \u201cMaterial property of amorphous oxide semiconductor and TFT application<\/em>\u201d, an open seminar for Qualcomm Incorporated, San Jose, US (2011).<\/h4>\n<\/li>\n
          12. \n

            Nomura<\/u><\/strong>, \u201cTransparent amorphous oxide semiconductor and their TFT applications<\/em>\u201d, an open seminar for BOE technology group co. Ltd, Beijing, China (2011).<\/h4>\n<\/li>\n
          13. \n

            Nomura<\/u><\/strong>, \u201cTFT characteristics and bias stability for a-IGZO TFTs<\/em>\u201d, an open seminar for Chimei Innolux Corporation, Taipei City, Taiwan (2011).<\/h4>\n<\/li>\n
          14. \n

            Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cHow we improve TFT characteristics and stability for oxide based TFTs<\/em>\u201d, Display Taiwan 2011 Business & Technology Forum, Taipei City, Taiwan (2011).<\/h4>\n<\/li>\n
          15. \n

            Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cImprovement of bias-light illumination stability for a-In-Ga-Zn-O TFTs: Interface, bulk and back channel effects<\/em>\u201d, The International TFT Conference 2011 (ITC 2011), Cambridge, UK (2011).<\/h4>\n<\/li>\n
          16. \n

            Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cDefects and impurities in amorphous oxide semiconductors probed by photo response spectroscopy\u201d, International Workshop on Flexible & Printable Electronics (IWFPE), Muju, Korea (2011\/11\/16-18) (2011).<\/h4>\n<\/li>\n
          17. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cCarrier transport specific to ionic semiconductors<\/em>\u201d, The 18th<\/span> International Workshop on Active-Matrix Flat panel Display and Devices -TFT Technologies and FPD Materials, S1-1, Kyoto, Japan (2011\/7\/11-13) (2011).<\/h4>\n<\/li>\n
          18. \n

            Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cCarrier transport, defects and impurities in amorphous oxide semiconductor\u201d, NIMS-UR1 Workshop, Rennes, France (2011\/5\/15-17) (2011)..<\/h4>\n<\/li>\n
          19. \n

            Nomura<\/u><\/strong>, \u201cMaterial properties for amorphous oxide semiconductor and device application<\/em>\u201d, an open seminar for Asahi glass Co. Ltd., Kanagawa (2011).<\/h4>\n<\/li>\n
          20. \n

            Nomura<\/u><\/strong>, \u201cMaterial design for amorphous oxide semiconductor and device application<\/em>\u201d, Jyohokikou seminar, Tokyo metropolitan small and medium enterprise support center, Tokyo (2011).<\/h4>\n<\/li>\n
          21. \n

            Nomura<\/u><\/strong>, K. Lee, T. Kamiya, and H. Hosono, \u201cElectronic structure of oxide semiconductor and application to solar cell<\/em>\u201d, The 3th solar cell seminar, Rafre Saitama, Saitama (2011).<\/h4>\n<\/li>\n
          22. \n

            Nomura<\/u><\/strong>, and H. Hosono, \u201cTAOS-TFTs: History and recent advances<\/em>\u201d, The 21th Fine tech Japan, Tokyo bigsite, Tokyo (2011).<\/h4>\n<\/li>\n
          23. \n

            Nomura<\/u><\/strong>, \u201cImprovement of TFT stability for oxide based TFTs<\/em>\u201d, Tech-Zone seminar, Kawasaki- city kyouiku bunka kaikan, Kanagawa (2011).<\/h4>\n<\/li>\n
          24. \n

            Kamiya, K. Nomura<\/u><\/strong>, H. Hosono, \u201cCharacteristics of oxide semiconductor and device application<\/em>\u201d, JACI seminar, JACI meeting room, Tokyo (2011\/12\/20) (2011).<\/h4>\n<\/li>\n
          25. \n

            Kamiya, K. Nomura<\/u><\/strong>, H. Hosono, \u201cOxide TFT materials toward flexible electronics: Present status and issue<\/em>\u201d, the meeting of oyoudensibusei bunkakai, Tokyo (2011\/11\/9) (2011).<\/h4>\n<\/li>\n
          26. \n

            Nomura<\/u><\/strong>, <\/strong>T. Kamiya, and H. Hosono, \u201cRecent progress in oxide based p-channel TFT and complementary inverter<\/em>\u201d, The 12th<\/span> International Meeting on Information Display (IMID 12), Daegu, Korea (2012).<\/h4>\n<\/li>\n
          27. \n

            Kamiya, K. Nomura<\/u>,<\/strong> and H. Hosono, \u201cAmorphous oxide thin film transistor: history and future applications<\/em>\u201d, The 2nd<\/span> International Conference on Electronic Materials and Nanotechnology for Green Environment, Jeju, Korea (2012).<\/h4>\n<\/li>\n
          28. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cRecent progress on transparent amorphous oxide semiconductor (TAOS) for flexible display applications<\/em>\u201d, The 9th International Conference on Coatings on Glass and Plastics (ICCG9), Breda, The Netherlands (2012).<\/h4>\n<\/li>\n
          29. \n

            Kamiya, K. Nomura<\/u><\/strong>, H. Hosono, \u201cPresent Status, Knowledge and Issues of Oxide Semiconductor Technology<\/em>\u201d, International Display Workshops (IDW\/AD’12), Kyoto Japan (2012)<\/h4>\n<\/li>\n
          30. \n

            Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cEffects of annealing temperature on structure, defects, and stability of amorphous In-Ga-Zn-O<\/em>\u201d, The 14th International Workshop on Flexible & Printable Electronics (IWFPE2012) Jeollabuk-do, Korea (2012).<\/h4>\n<\/li>\n
          31. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cImpurity and Defects in Amorphous In-Ga-Zn-O<\/em>\u201d, IMID 2012 Workshop, Seoul, Korea, <\/em>(2012).<\/h4>\n<\/li>\n
          32. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cAmorphous oxide technology: What have been clarified, what should be known?<\/em>\u201d, 2nd International Symposium on Transparent Conductive Coatings: Solar and Display Applications (ISTC 2012) Seoul, Korea, (2012).<\/h4>\n<\/li>\n
          33. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cAmorphous oxide semiconductors: History, present status, and unrevealed secrets<\/em>\u201d, International Union of Materials Research Society – International Conference in Asia 2012 (IUMRS-ICA 2012), Busan, Korea (2012).<\/h4>\n<\/li>\n
          34. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cOrigins of TFT characteristics and instability specific to a-IGZO TFT<\/em>\u201d, Int. Workshop Organic Electronics, Seoul, Korea (2012).<\/h4>\n<\/li>\n
          35. \n

            Nomura<\/u><\/strong>, and H. Hosono, \u201cFunctional oxide thin film and electric device application<\/em>\u201d, Materials Science Society of Japan, Tokyo, Japan (2012).<\/h4>\n<\/li>\n
          36. \n

            Nomura<\/u><\/strong>, \u201cPresent Status and Open Issues of Amorphous Oxide Semiconductor TFT technology<\/em>\u201d, IEEE Photonics conference 2013(IPC 2013), Seattle, US (2013).<\/h4>\n<\/li>\n
          37. \n

            Nomura,<\/u><\/strong> \u201cAtomic structure, electronic structure, and structural relaxation of transparent amorphous oxide semiconductor, In-Ga-Zn-O<\/em>\u201d, The 10th<\/span> Pacific Rim Conference on Ceramic and Glass Technology (PACRIM10), San Diego, US, (2013\/6\/4) (2013).<\/h4>\n<\/li>\n
          38. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cElectronic structure, carrier transport, defects and impurities in amorphous oxide semiconductor<\/em>\u2019, SID 2013, Vancouver, Canada (2013).<\/h4>\n<\/li>\n
          39. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cElectrical property of IGZO based oxide semiconductor transistor<\/em>\u201d The 18th<\/span> meeting, gate stack Research Association, 103-106, Kanagawa, Japan (2013).<\/h4>\n<\/li>\n
          40. \n

            Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cAnnealing effect and in-situ observation of crystallization for In-Ga-Zn-O thin films<\/em>\u201d, The JPS 166th<\/span> Committee on photonic and electronic oxide, the 58th meetings, Tokyo, Japan (2013).<\/h4>\n<\/li>\n
          41. \n

            Kamiya, K. Ide, K. Nomura<\/u><\/strong>, H. Kumomi, and H. Hosono, \u201cStructural Relaxation, Crystallization, and Defect Passivation in Amorphous In-Ga-Zn-O<\/em>; International Display Workshop 2013 (IDW’13), Sapporo, Japan (2013).<\/h4>\n<\/li>\n<\/ol>\n

             <\/h4>\n

            Presentations<\/strong><\/h2>\n
              \n
            1. \n

              Hosono, K. Nomura<\/u><\/strong>, and T. Kamiya, \u201cA Bipolar Oxide TFT<\/em>\u201d (Late News Paper), The 49th<\/span> SID Display Week, Los Angeles, US (2011\/5\/17).<\/h4>\n<\/li>\n
            2. \n

              Kamiya, N. Kobayashi, K. Nomura,<\/u><\/strong> and H. Hosono, \u201cFabrication and characteristics of short-channel a-IGZO TFTs<\/em>\u201d, Visual-JW2011, Osaka, Japan (2010\/11\/11-12).<\/h4>\n<\/li>\n
            3. \n

              Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cDefect states in amorphous oxide semiconductor, a-InGaZnO4: Formation energies, cation deficiencies, and anion\/cation anti-site linkages<\/em>\u201d, The 37th<\/span> International Symposium on Compound Semiconductors (ISCS2010), TuD1-5, Kagawa, Japan (2010\/5\/31-6\/4).<\/h4>\n<\/li>\n
            4. \n

              Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cInfluence of metastable chemical bonds on current-bias instability of a-In-Ga-Zn-O TFTs<\/em>\u201d, The 37th<\/span> International Symposium on Compound Semiconductors (ISCS2010), TuD1-3, Kagawa, Japan (2010\/5\/31-6\/4).<\/h4>\n<\/li>\n
            5. \n

              H. Lee, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cDiffusion-limited Schottky contact made of amorphous oxide semiconductor, a-In-Ga-Zn-O, and Pt<\/em>\u201d, 4th<\/span> International Conference on Science and Technology for Advanced Ceramics (STAC-4), Yokohama, Japan (2010\/6\/21-23).<\/h4>\n<\/li>\n
            6. \n

              Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cEffect of channel and interface defect on bias stability in a-IGZO TFT<\/em>\u201d, The 71th<\/span> JSAP Fall Meeting, 16a-ZJ-6, Nagasaki (2010\/9\/14-9\/17).<\/h4>\n<\/li>\n
            7. \n

              Lee, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, and H. Hosono, \u201cPhotovoltaic property of n-type a-In-Ga-Zn-O \/ p-type c-Si heterojunction Solar cell\u201d<\/em>, The 71th<\/span> JSAP Fall Meeting, 16a-ZJ-7, Nagasaki (2010\/9\/14-9\/17).<\/h4>\n<\/li>\n
            8. \n

              Kabayashi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cFabrication and characterization of short channel a-In-Ga-Zn-O TFT<\/em>\u201d, The 7th<\/span> Thin Film Materials & Devices Meeting, 6P32, Nara (2010\/11\/5-6).<\/h4>\n<\/li>\n
            9. \n

              Shao, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cInitial film growth and TFT characteristics for very thin a-In-Ga-Zn-O-TFT<\/em>\u201d, The 7th<\/span> Thin Film Materials & Devices Meeting, 6O01, Nara (2010\/11\/5-6).<\/h4>\n<\/li>\n
            10. \n

              Kikuchi, K. Nomura<\/u><\/strong>, K. Ide, T. Kamiya, and H. Hosono, \u201cImprovement of TFT characteristics a-In-Ga-Zn-O TFT by low temperature annealing<\/em>\u201d, The 7th<\/span> Thin Film Materials & Devices Meeting, 5P31, Nara (2010\/11\/5-6).<\/h4>\n<\/li>\n
            11. \n

              H. Lee, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cSchottky junction of amorphous oxide semiconductor and Pt metal<\/em>\u201d, The 7th<\/span> Thin Film Materials & Devices Meeting, 6P40, Nara (2010\/11\/5-6).<\/h4>\n<\/li>\n
            12. \n

              Ohta, Y. Sato, T. Kato, S. W. Kim, K. Nomura<\/u><\/strong>, Y. Ikuhara, and H. Hosono,\u201d Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal<\/em>\u201d, The 57th<\/span> JSAP Spring Meeting, 19p-TQ-17, Kanagawa (2010\/3\/17~20).<\/h4>\n<\/li>\n
            13. \n

              Nakanishi, T. Hasegawa, M. Sakami, M. Kimura, K. Nomura<\/u><\/strong>, T. Kamiya, H. Hosono, and T. Aoki, \u201cCharacterization of CTFT inverter using amorphous oxide and polymer<\/em>\u201d, The 57th<\/span> JSAP Spring Meeting, 17a-TL-10, Kanagawa (2010\/3\/17~20).<\/h4>\n<\/li>\n
            14. \n

              Nomura<\/u><\/strong>, Y. Kikuchi, K. Ide, T. Kamiya, and H. Hosono, \u201cRoles of Excess Hydrogen and Oxygen in Amorphous IGZO<\/em>\u201d, The 24th<\/span> International Conference on Amorphous and Nanocrystalline Semiconductors, 2B2-1, Nara, Japan (2011\/8\/22-26).<\/h4>\n<\/li>\n
            15. \n

              Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cVisible-light blind, stable a-In-Ga-Zn-O thin-film transistors<\/em>\u201d, The 7th<\/span> International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-7) 16p-O004, Tokyo, Japan (2011\/ 4\/14-15).<\/h4>\n<\/li>\n
            16. \n

              K Lee, Nomura,<\/u><\/strong> H. Yanagi, T. Kamiya, and H. Hosono, \u201cPhotovoltaic properties of n-type a-In-Ga-Zn-O \/ p-type c-Si heterojunction solar cells<\/em>\u201d, The 7th<\/span> International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-7), 14p-P060, Tokyo, Japan (2011\/ 4\/14-15).<\/h4>\n<\/li>\n
            17. \n

              H. Lee, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cAmorphous In-Ga-Zn-O-based Metal-Semiconductor Field-Effect Transistors by Schottky contact made of bottom Pt electrode<\/em>\u201d, TOEO-7, 15p-P132, Tokyo, Japan (2011\/ 4\/14-15).<\/h4>\n<\/li>\n
            18. \n

              Ohta, Y. Sato, T. Kato, S.W. Kim, K. Nomura<\/u><\/strong>, Y. Ikuhara, and H. Hosono, \u201cField-Induced Water Electrolysis Switches SrTiO3 from an Insulator to a 2D-Metal exhibiting Gigantic Thermopower<\/em>\u201d, TOEO-7, 16p-O006, Tokyo, Japan (2011\/ 4\/14-15).<\/h4>\n<\/li>\n
            19. \n

              Lee, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, and H. Hosono, \u201cGrowh of Highly-Oriented, High Mobility Cu2O for Heterojunction Amorphous-IGZO\/Cu2O Solar Cell<\/em>\u201d, ICANS24, 4C2-4, Nara, Japan (2011\/8\/22-26).<\/h4>\n<\/li>\n
            20. \n

              Kamiya, K. Nomura<\/u><\/strong>, K. Abe, and H. Hosono, \u201cDevice Physics of Amorphous In-Ga-Zn-O<\/em>\u201d, ICANS24, 3B2-3, Nara, Japan (2011\/8\/22-26).<\/h4>\n<\/li>\n
            21. \n

              Ide, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cStructural Relaxation and Glass Transition in Amorphous Oxide Semiconductor, a-In-Ga-Zn-O<\/em>\u201d, ICANS24, 1B2-1, Nara, Japan (2011\/8\/22-26).<\/h4>\n<\/li>\n
            22. \n

              Ide, Y. Kikuchi, K. Nomura<\/u><\/strong>, T. Kamiya and H. Hosono, \u201cOversaturated oxygen and operation characteristics of a-In-Ga-Zn-O TFTs<\/em>\u201d, TOEO-7, 14p-O003, Tokyo, Japan (2011\/ 4\/14-15).<\/h4>\n<\/li>\n
            23. \n

              Abe, A. Sato, K. Takahashi, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOperation Model with Carrier-Density Dependent Mobility for Amorphous In-Ga-Zn-O Thin-Film Transistors<\/em>\u201d, TOEO-7, 14p-P065, Tokyo, Japan (2011\/ 4\/14-15).<\/h4>\n<\/li>\n
            24. \n

              Kamiya, Y. Kikuchi, K. Ide, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cEffects of Low-Temperature Annealing and Deep Traps in Operation Characteristics of Amorphous In-Ga-Zn-O Thin-Film Transistors<\/em>\u201d, The American Vacuum Society Symposium, TC+EM+NS-ThA10, Nashville, USA (2011\/10\/30-11\/4).<\/h4>\n<\/li>\n
            25. \n

              Ide, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cWhy Optimum Oxygen Pressure Range Exists for Fabricating Amorphous In-Ga-Zn-O Thin-Film Transistor and How it Should be Optimized<\/em>\u201d, The American Vacuum Society Symposium, TC+EM+NS-ThA9, Nashville, USA (2011\/10\/30-11\/4).<\/h4>\n<\/li>\n
            26. \n

              H. Lee, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cPhoto response of Amorphous In-Ga-Zn-O \/ Pt Schottky Junction<\/em>\u201d, The American Vacuum Society Symposium, TC+EM+NS-ThA3, Nashville, USA (2011\/10\/30-11\/4).<\/h4>\n<\/li>\n
            27. \n

              Yamada, K. Nomura<\/u><\/strong>, S. Takeda, and H. Hosono, \u201cNovel approach for preventing atmosphere effects on Vth stability of a-In-Ga-Zn-O thin film transistor by glass sealing<\/em>\u201d, The 18th<\/span> International Display Workshop (IDW’11), AMD6-5L, Nagoya, Japan (2011\/12\/7-9).<\/h4>\n<\/li>\n
            28. \n

              Shao, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOptimization of p-Type Oxide Thin-Film Transistors Using Cu2<\/span>O Channels<\/em>\u201d, The 18th<\/span> International Workshop on Active- Matrix Flat panel Displays and Devices (AM-FPD 11), P-16, Kyoto, Japan (2011\/7\/11-13).<\/h4>\n<\/li>\n
            29. \n

              Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cPeculiar electrical properties and local structures in amorphous oxide semiconductor, a-In-Ga-Zn-O<\/em>\u201d, The 5th<\/span> Int. Conf. Sci. Technol. for Advanced Ceramics (STAC5) \u2013The 2nd<\/span> Int. Conf. Advanced Materials Development and Integration (AMDI2), Yokohama, JAPAN (2011\/7\/22-24).<\/h4>\n<\/li>\n
            30. \n

              Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOxygen and Hydrogen diffusion in amorphous oxide semiconductor a-In-Ga-Zn-O<\/em>\u201d, The 8th<\/span> Thin Film Materials & Devices Meeting, 4O04, Kyoto\uff082011\/11\/4-5).<\/h4>\n<\/li>\n
            31. \n

              Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cAmbipolar Transistor using poly-crystalline SnO channel<\/em>\u201d, The 72th<\/span> JSAP Fall Meeting, 1a-N-1, Yamagata\uff082011\/8\/29-9\/2).<\/h4>\n<\/li>\n
            32. \n

              Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cRole of excess oxygen in amorphous oxide semiconductor In-Ga-Zn-O<\/em>\u201d, The 72th<\/span> JSAP Fall Meeting, 1a-N-11, Yamagata (2011\/8\/29-9\/2).<\/h4>\n<\/li>\n
            33. \n

              Kobayashi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cFabrication and characterization of short channel a-In-Ga-Zn-O TFT<\/em>\u201d, The 49th<\/span> basic science division of The Ceramic Society of Japan, 1D23, Okayama (2011\/1\/11~12).<\/h4>\n<\/li>\n
            34. \n

              Ohta, T. Mizuno, S. Zheng, T. Kato, Y. Ikuhara, K. Abe, H. Kumomi, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cUnusually Large Enhancement of Thermopower in an Electric Field Induced Two-Dimensional Electron Gas<\/em>\u201d,  The 72th<\/span> JSAP Fall Meeting,  30a-F-7, Yamagata (2011\/8\/29-9\/2).<\/h4>\n<\/li>\n
            35. \n

              Ohta, T. Mizuno,  S. Zheng,  T. Kato, Y. Ikuhara, K. Abe, H. Kumomi,  K. Nomura<\/u><\/strong>, and H. Hosono, \u201dFormation of Two-Dimensional Electron Gas using water in nano pore and Thermopower modulation<\/em>\u201d, The 149th<\/span> The Japan Institute of metals Fall Meeting, S1\u30fb3, Okinawa\uff082011\/11\/7-11\/9\uff09.<\/h4>\n<\/li>\n
            36. \n

              Mizuno, S. Zheng,  T. Kato, Y. Ikuhara, K. Abe, H. Kumomi,  K. Nomura<\/u><\/strong>,  H. Hosono, and H. Ohta,  \u201cUnusually Large Enhancement of Thermopower in an Electric Field Induced Two-Dimensional Electron Gas in SrTiO3<\/span><\/em>\u201d, The 8th<\/span> Thin Film Materials & Devices Meeting, 4O02, Kyoto (2011\/11\/4-5).<\/h4>\n<\/li>\n
            37. \n

              Abe, K. Takahash, A. Sato, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOperation model and electrical characteristics for amorphous a-In-Ga-Zn-O based dual gate TFT\u201d<\/em>, The 8th<\/span> Thin Film Materials & Devices Meeting, 4P41, Kyoto (2011\/11\/4-5).<\/h4>\n<\/li>\n
            38. \n

              Ide, Y. Kikuchi, T. Kamiya, K. Nomura<\/u><\/strong>, M. Kimura, and H. Hosono, \u201cExcess oxygen related defect in amorphous oxide semiconductor a-In-Ga-Zn-O and their TFT characteristics<\/em>\u201d, The 72th<\/span> JSAP Fall Meeting, 1a-N-10, Yamagata\uff082011\/8\/29-9\/2).<\/h4>\n<\/li>\n
            39. \n

              Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cAmorphous oxide semiconductor from the viewpoint of glass<\/em>\u201d, The 49th<\/span> basic science division of The Ceramic Society of Japan, 1C12, Okayama (2011\/1\/11~12).<\/h4>\n<\/li>\n
            40. \n

              Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cElectronic structures of impurities in amorphous In-Ga-Zn-O<\/em>\u201d, Materials Research Society Fall Meeting & Exhibits, Z12.09, Boston, USA (2012)<\/h4>\n<\/li>\n
            41. \n

              Miyase, K. Domen, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cEffects of hydrogen in amorphous In-Ga-Zn-O TFTs examined by ultrahigh vacuum sputtering\u201d, Materials Research Society Fall Meeting & Exhibits, Z9.20, Boston, USA (2012).<\/h4>\n<\/li>\n
            42. \n

              Fukai, T. Sasaki, H. Kawarada, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cShort-Channel a-IGZO Thin Film Transistors with Very Thin Gate Insulator and Self-Alignment Ar plasma Process<\/em>\u201d, The 5th International Symposium on Designing, Processing and Properties of Advanced Engineering Materials and The 3rd International Symposium on Advanced Materials Development and Integration of Novel Structural Metallic and Inorganic Materials (ISAEM-2012\/AMDI-3), P7-33 Toyohashi, Japan (2012).<\/h4>\n<\/li>\n
            43. \n

              Xiao, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cApparent High Mobility ~30 cm2<\/span>\/Vs of Amorphous In-Ga-Zn-O Thin-Film Transistor and Its Origin<\/em>\u201d, The 6th International Conference on the Science and Technology for Advanced Ceramics (STAC-6), 1P-O-P97, Yokohama (2012).<\/h4>\n<\/li>\n
            44. \n

              Mizuno, K. Nomura<\/u><\/strong>, H. Hosono, and H. Ohta, \u201cThermopower modulation of water electrolysis induced 2DEG in oxide semiconductors<\/em>\u201d, The 59th<\/span> The Japan Society of Applied Physics (JSAP) Spring Meeting, 18p-F6-7, Tokyo (2012\/3\/18).<\/h4>\n<\/li>\n
            45. \n

              Miyase, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cHigh temperature carrier transport and origin of its instability in a-IGZO<\/em>\u201d, The 59th<\/span> JSAP Spring Meeting, 17p-E4-21, Tokyo (2012\/3\/18)<\/h4>\n<\/li>\n
            46. \n

              Abe, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOptical properties of amorphous oxide semiconductor superlattices<\/em>\u201d, The 59th<\/span> JSAP Spring Meeting, 17p-E8-21, Tokyo (2012\/3\/18).<\/h4>\n<\/li>\n
            47. \n

              Kamiya, K. Ide, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cChanges of structure, defects and TFT characteristics of amorphous oxide semiconductor, a-IGZO, by thermal annealing<\/em>\u201d, The 59th<\/span> JSAP Spring Meeting, 17p-E4-20, Tokyo (2012\/3\/18).<\/h4>\n<\/li>\n
            48. \n

              Hasegawa, M. Kimura, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cLight Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing<\/em>\u201d, The 9th<\/span> Thin Film Materials & Devices Meeting, 3P30, Kyoto (2012\/11\/2).<\/h4>\n<\/li>\n
            49. \n

              Abe, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cThin Film transistor using amorphous oxide semiconductor super lattice<\/em>\u201d, The 73th<\/span> JSAP Fall Meeting, 13a-H7-6, Ehime (2012\/9\/14).<\/h4>\n<\/li>\n
            50. \n

              Watanabe, D.-H. Lee, I. Sakaguchi, K. Nomura<\/u><\/strong>, T. Kamiya, H. Hosono, and N. Ohashi, \u201c Response of Amorphous In-Ga-Zn-O to Humid Air<\/em>\u201d, International Symposium on Eco Topia Science 2013 (ISETS2013) and The 4th International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-4), TuB4-4, Nagoya , Japan (2013).<\/h4>\n<\/li>\n
            51. \n

              Fukai, T. Sasaki, H. Kawarada, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOperation Characteristics of Short-Channel a-IGZO Thin Film Transistors with Very Thin Gate Insulator<\/em>;\u201d, The 40th<\/span> Int. Symp. Comp. Semicond. (ISCS2013), Kobe, Japan (2013).<\/h4>\n<\/li>\n
            52. \n

              Fukai, T. Sasaki, H. Kawarada, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cShort Channel Characteristics of a-IGZO Thin Film Transistors Using Very Thin Gate Insulator<\/em>\u201d, International Symposium on EcoTopia Science 2013 (ISETS2013) and The 4th International Symposium on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-4), P-10-79, Nagoya, Japan (2013).<\/h4>\n<\/li>\n
            53. \n

              Hasegawa, M. Inoue, T. Matsuda, M. Kimura, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201c3-D Stacked Complementary TFT Devices Using n-Type a-IGZO and p-Type F8T2 TFTs – Comparison between Stacked and Sided Configurations<\/em>\u201d, International Display Workshop 2013 (IDW’13) AMD6-3L, Sapporo, Japan (2013).<\/h4>\n<\/li>\n
            54. \n

              Kamiya, T. Miyase, K. Watanabe, I. Sakaguchi, N. Ohashi, K. Domen, K. Nomura<\/u><\/strong>, H. Kumomi, and H. Hosono, \u201cRoles of hydrogen in amorphous oxide semiconductor\u201d,<\/em> 2nd International Symposium on Inorganic and Environmental Materials (ISIEM2013), Rennes, France, D1-4-1 (2013).<\/h4>\n<\/li>\n
            55. \n

              Kamiya, T. Miyase, K. Watanabe, I. Sakaguchi, N. Ohashi, K. Domen, K. Nomura<\/u><\/strong>, H. Kumomi, and H. Hosono, \u201cRoles of hydrogen on atomic and defect structures in amorphous oxide semiconductor, a-IGZO<\/em>\u201d, The 12th<\/span> Asia Pacific Physics Conference(APPC12), A4-PTu-1, Chiba, JAPAN (2013\/7\/14).<\/h4>\n<\/li>\n
            56. \n

              Kamiya, T. Miyase, K. Watanabe, I. Sakaguchi, N. Ohashi, K. Domen, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cEnhancement of Structural Relaxation and Chemical Bonding Weakening by Hydrogen in Amorphous Oxide Semiconductor<\/em>\u201d, The 7th International Conference on the Science and Technology of Advanced Ceramics (STAC-7), <\/em>3A-03, Yokohama, JAPAN<\/em>(2013)<\/h4>\n<\/li>\n
            57. \n

              Kimura, T. Hasegawa, and M. Inoue, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201c3-D Stacked Complementary TFT Devices using n-type <\/em>a<\/em>-IGZO and p-type F8T2 TFTs<\/em>–<\/em> Operation Confirmation of NOT and NAND Logic Circuits –<\/em>\u201d, SID 2013, <\/em>P-3, Vancouver, CANADA<\/em>, (2013).<\/h4>\n<\/li>\n
            58. \n

              Watanabe, D. Lee, I. Sakaguchi, K. Nomura<\/u><\/strong>, T. Kamiya, H. Hosono, and N. Ohashi, \u201dHydrogen Incorporation and Migration in a-In-Ga-Zn-O Annealed in Humid Air\u201d, <\/em>8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-8), 14pP18, Tokyo, Japan(2013).<\/h4>\n<\/li>\n
            59. \n

              Orui, D. H. Lee, K. Nomura<\/u><\/strong>, H. Hosono, and T. Kamiya, \u201cEffect of Back Pressure and Hydrogen on Operation Characteristics of a-IGZO\/Pt Schottky Diodes<\/em>\u201d, 8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-8), 13pP27, Tokyo, Japan (2013).<\/h4>\n<\/li>\n
            60. \n

              Fukai, T. Sasaki, H. Kawarada, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cShort-Channel a-IGZO Thin Film Transistors Using Very Thin Gate Insulator\u201d, 8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-8), <\/em>13pP26, Tokyo, Japan<\/em> (2013).<\/h4>\n<\/li>\n
            61. \n

              Habu, K. Abe, K. Domen, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cTFT characteristics and the influence of hydrogen in In-Ga-Zn-O TFT<\/em>\u201d, The 60th<\/span> The Japan Society of Applied Physics (JSAP) Spring Meeting, 29p-G19-13, Kanagawa (2012\/3\/27).<\/h4>\n<\/li>\n
            62. \n

              Kamiya, T. Miyase, K. Domen, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cElectrical property and TFT characteristics in hydrogen reseeded In-Ga-Zn-O<\/em>\u201d, The 60th<\/span> The Japan Society of Applied Physics (JSAP) Spring Meeting, 29p-G19-12, Kanagawa (2012\/3\/27).<\/h4>\n<\/li>\n
            63. \n

              Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cHydrogen and oxygen impurity in amorphous oxide semiconductor<\/em>\u201d, The 51th<\/span> basic science division of The Ceramic Society of Japan, 2B16, Kanagawa (2012\/1\/9).<\/h4>\n<\/li>\n
            64. \n

              Kimura, T. Hasegawa, T. Matsuda, K. Ide, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cLight Irradiation and Applied Voltage History Sensors Using Amorphous In-Ga-Zn-O Thin- Film Transistors Exposed to Ozone Annealing and Fabricated under High Oxygen Pressure<\/em>\u201d The Twenty-First International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES – TFT Technologies and FPD Materials (AM-FPD14), 5-3, (2014).<\/h4>\n<\/li>\n
            65. \n

              Orui, D. H. Lee, K. Nomura<\/u><\/strong>, H. Hiramatsu, H. Kumomi, H. Hosono, and T. Kamiya, \u201cEffect of Back Pressure and Hydrogen on Operation Characteristics of a-IGZO\/Pt Schottky Diodes<\/em>\u201d, The 52th<\/span> basic science division of The Ceramic Society of Japan, 2D20, Aichi, Japan (2014).<\/h4>\n<\/li>\n<\/ol><\/div>\n\t\t\t\t\t\t\t\t\t
              2009-2005<\/div>\n\t\t\t\t\t

              Invited talks<\/strong><\/h2>\n
                \n
              1. \n

                Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cTransparent oxide semiconductor based TFT and flexible display<\/em>\u201d, TFT technology committee meeting, Tokyo Electron Limited. Tokyo, (2005).<\/h4>\n<\/li>\n
              2. \n

                H.Hosono, T. Kamiya, K. Nomura<\/u><\/strong>, \u201cTransparent transistor using ZnO based semiconductor<\/em>\u201d, the meeting of oyoudensibusei bunkakai, Tokyo (2005).<\/h4>\n<\/li>\n
              3. \n

                Kamiya, K. Nomura<\/u><\/strong>, H. Hosono, \u201cTransparent flexible transistor using amorphous oxide semiconductor<\/em>\u201d, The JPS 131th Committee on photonic and electronic oxide, the 228th meetings, Ishikawa (2005).<\/h4>\n<\/li>\n
              4. \n

                Kamiya, K. Nomura<\/u><\/strong>, H. Hosono, \u201cTransparent flexible transistor using amorphous oxide semiconductor fabricated at room temperature<\/em>\u201d, The JPS 147th Committee on amorphous and nano material, the 88th meetings, Osaka (2005).<\/h4>\n<\/li>\n
              5. \n

                Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano and H. Hosono, \u201cCarrier transport of extended and localized states in InGaO3<\/span>(ZnO)5<\/span><\/em>\u201d, Mater. Res. Soc. Symp. Spring Meeting (2004 MRS), Graduate Student Gold Award, San Francisco, USA, (2004\/4\/12-16).<\/h4>\n<\/li>\n
              6. \n

                Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cHigh performance transparent flexible transistor using amorphous oxide semiconductor<\/em>\u201d, The JPS 166th Committee on photonic and electronic oxide, the 30th meetings, Tokyo (2005).<\/h4>\n<\/li>\n
              7. \n

                Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cMaterial exploration of amorphous oxide semiconductor for high-performance flexible TFT and the performance of the TFT<\/em>\u201d, The 32th Amorphous seminar, Tsukuba (2005).<\/h4>\n<\/li>\n
              8. \n

                Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cZnO-based transparent complex oxide semiconductor for large-mobility flexible thin film transistor<\/em>\u201d, 3rd<\/span> International Conference on Materials for Advanced Technologies (ICMAT2005), Singapore, Singapore (2005\/7\/3-8).<\/h4>\n<\/li>\n
              9. \n

                Hosono, K. Nomura<\/u><\/strong>, and T. Kamiya, \u201cIonic Amorphous Oxide Semiconductors<\/em>\u201d, The 8th International Conference on Laser Ablation (COLA05), Banff, Canada, (2005\/9\/11-16).<\/h4>\n<\/li>\n
              10. \n

                Hosono, T. Kamiya, and K. Nomura<\/u><\/strong>, \u201cTransparent High Performance FET Using Amorphous Oxide Semiconductors<\/em>\u201d, The 12th International Workshop on Active-Matrix Liquid-Crystal Displays -TFT Technologies and Related Materials- (AM-LCD’05), Kanazawa, Japan (2005\/7\/6-8).<\/h4>\n<\/li>\n
              11. \n

                Nomura<\/u><\/strong>, \u201cTransparent oxide semiconductors based electronic device\u201d<\/em>, an open seminar in AT&T Bell Lab, New Jersey, USA (2005).<\/h4>\n<\/li>\n
              12. \n

                Nomura<\/u><\/strong>, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cTransparent flexible transistor using amorphous oxide semiconductors\u201d, <\/em>The 2005 Mater. Res. Soc. Fall Meeting (MRS2005 Fall meeting), Boston, USA(2005).<\/h4>\n<\/li>\n
              13. \n

                Ohta, S-W. Kim, K. Nomura<\/u><\/strong>, S. Ohta, T. Nomura, M. Hirano, H. Hosono, and K. Koumoto, \u201cGiant Seebeck effect originating from 2DEG at the TiO2\/SrTiO3 heterointerface<\/em>\u201d, 2005 Mater. Res. Soc. Fall Meeting, Boston, MA, USA (2005\/11\/28-12\/2).<\/h4>\n<\/li>\n
              14. \n

                Hosono, K. Nomura<\/u><\/strong>, T. Kamiya, \u201cHigh performance flexible transistor using transparent amorphous oxide semiconductor<\/em>\u201d The 12th International Display Workshop, Takamatsu, Japan (2005\/126-9) .<\/h4>\n<\/li>\n
              15. \n

                Hosono, T. Kamiya, and K. Nomura<\/u><\/strong>, \u201cTransparent amorphous and crystalline oxide semiconductors in the system In-Ga-Zn-O<\/em>\u201d, Europa-Park Rust, Germany, (2005\/9\/18-22) .<\/h4>\n<\/li>\n
              16. \n

                Hosono, K. Nomura<\/u><\/strong>, and T. Kamiya, \u201cIonic Amorphous Oxide Semiconductors<\/em>\u201d, The 8th International Conference on Laser Ablation (COLA05), Banff, Canada, (2005\/9\/11-16) (2006).<\/h4>\n<\/li>\n
              17. \n

                Nomura<\/u><\/strong>, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono,\u201dMaterials exploration of amorphous oxide semiconductor for TFT and their device performances\u201d, <\/em>International symposium on Transparent oxide semiconductors 2006 (TAOS2006), Yokohama, Japan (2006).<\/h4>\n<\/li>\n
              18. \n

                Nomura<\/u><\/strong>, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, \u201cGrowth of single-crystalline thin films of homologous series oxide semiconductors by reactive solid-phase epitaxy\u201d, <\/em>The Korean Association of Crystal Growth (KACG) Fall Meeting, Seoul, Korea (2006).<\/h4>\n<\/li>\n
              19. \n

                Nomura<\/u><\/strong>, \u201cTransparent flexible transistor using amorphous oxide semiconductor\u201d<\/em>, an open seminar for Sungkyunkwan University, Seoul, Korea (2006).<\/h4>\n<\/li>\n
              20. \n

                Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cRecent progress in amorphous oxide semiconductors and thin film transistors<\/em>\u201d Electrochemical Society (ECS) 8th Thin Film Transistor Technology (TFTT VIII) symposium, Cancun, Mexico, (2006\/10\/29-11\/3) (2006).<\/h4>\n<\/li>\n
              21. \n

                Nomura<\/u><\/strong>, \u201cHigh performance oxide based transistors<\/em>\u201d, an open seminar for Nagoya University, Nagoya University, Nagoya (2006).<\/h4>\n<\/li>\n
              22. \n

                Hosono, K. Nomura<\/u><\/strong> and T. Kamiya, \u201cTransparent Amorphous Oxide<\/em>\u3000<\/em>Semiconductors for High Performance TFT’s<\/em>\u201d, The SID International Symposium Seminar, and Exhibition (SID 2007), Long Beach, CA, USA. (2007\/5\/21-25) (2007).<\/h4>\n<\/li>\n
              23. \n

                Hosono, T. Kamiya, and K. Nomura<\/u><\/strong>, \u201cRecent Advances in TAOS-TFT<\/em>\u201d, 7th International Meeting on Information Display (IMID 2007), Daegu, South Korea (2007\/8\/27-31) (2007).<\/h4>\n<\/li>\n
              24. \n

                Abe, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cAmorphous In-Ga-Zn-O based TFTs and Circuits<\/em>\u201d, The 14th International Display Workshop (IDW’07), AMD9-2, Sapporo, Japan (2007\/12\/5-7) (2007).<\/h4>\n<\/li>\n
              25. \n

                Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cThe Present Status of Amorphous Oxide Semiconductors: Carrier Transport, Electronic Structure, and Device Applications<\/em>\u201d, International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan (2007\/10\/15-17) (2007).<\/h4>\n<\/li>\n
              26. \n

                Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cOxide Semiconductors for Low-T TFTs: Fabrication, Transport properties, electronic structures and device characteristics<\/em>\u201d 2007 The Fourteenth International Workshop on Active-Matrix Flat panel Displays and Devices -TFT Technologies and Related Materials (AM-FPD07), Hyogo, Japan (2007\/7\/11-13) (2007).<\/h4>\n<\/li>\n
              27. \n

                Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cCarrier transport, structure, defect and doping in amorphous oxide semiconductors<\/em>\u201d LGE Seminar, Seoul, South Korea, (2007\/06\/22) (2007).<\/h4>\n<\/li>\n
              28. \n

                Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cCharacteristic properties of amorphous oxide semiconductors and present issues<\/em>\u201d, ETRI Seminar, Daejeon, South Korea, (2007\/06\/20) (2007).<\/h4>\n<\/li>\n
              29. \n

                Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cRecent progress in amorphous oxide semiconductor: From structure, carrier transport to TFT performance<\/em>\u201d, Oxide TFT Workshop, Daejeon, Korea, 2007\/6\/21) (2007).<\/h4>\n<\/li>\n
              30. \n

                Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, H. Hirano, and H. Hosono, \u201cUniformity and integrated circuits of amorphous oxide channel TFTs<\/em>\u201d, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-6-6, Strasbourg, France, (2007\/5\/28\/-6\/1) (2007).<\/h4>\n<\/li>\n
              31. \n

                Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cThin film fabrication using amorphous oxide semiconductor and their applications<\/em>\u201d, Waseda university nanotechnology forum – The 29th nano-structural system-, Waseda University, Tokyo (2007).<\/h4>\n<\/li>\n
              32. \n

                Hayashi, A. Sato, M. Ofuji, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cImproved Amorphous In-Ga-Zn-O TFTs<\/em>\u201d, The SID International Symposium Seminar, and Exhibition (SID2008), 42.1, Los Angeles, USA (2008\/5\/18-23) (2008).<\/h4>\n<\/li>\n
              33. \n

                Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cElectronic Structure, Doping, Defects, and Carrier Transport in Amorphous Oxide Semiconductors: Recent Progress<\/em>\u201d, Third International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA08), 6-9, Edmonton, Alberta, Canada (2008\/7\/20-25) (2008).<\/h4>\n<\/li>\n
              34. \n

                Nomura<\/u><\/strong>, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, \u201cDefect structure and stabilization of a-In-Ga-Zn-O based TFTs<\/em>\u201d, 4th Oxide TFT Workshop, Taejon, Korea (2009).<\/h4>\n<\/li>\n
              35. \n

                Nomura<\/u><\/strong>, \u201cImprovement of device characteristics and stabilization of a-In-Ga-Zn-O based TFTs<\/em>\u201d, an open seminar for Electronics and Telecommunications Research Institute (ETRI), Taejon, Korea (2009).<\/h4>\n<\/li>\n
              36. \n

                Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cImpact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor<\/em>\u201d, The 16th<\/span> Int. Display Workshop, AMD7-1, Miyazaki, Japan (2009\/12\/9-11) (2009).<\/h4>\n<\/li>\n
              37. \n

                Kamiya, K. Nomura<\/u><\/strong> and H. Hosono, \u201cDefects and doping in amorphous oxide semiconductor studied by first-principles calculations<\/em>\u201d, The 26th<\/span> Int. Japan-Korea Seminar on Ceramics, 2B-I 1, Tsukuba, Japan (2009\/11\/24-26) (2009).<\/h4>\n<\/li>\n
              38. \n

                Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cAmorphous oxide semiconductor: Factors determining TFT performance and stability<\/em>\u201d, The 9th<\/span> Int. Meeting on Inf. Display (IMID2009), 32-2 Seoul, Korea (2009\/10\/12-1) (2009).<\/h4>\n<\/li>\n
              39. \n

                Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cAmorphous oxide semiconductors and their TFT applications<\/em>\u201d, an open seminar for Nara Institute of Science and Technology, Nara Institute of Science and Technology, Nara (2009).<\/h4>\n<\/li>\n
              40. \n

                Nomura<\/u><\/strong>, and H. Hosono, \u201cElectronic structure analysis for transparent oxide semiconductors by hard X-ray photoemission spectroscopy<\/em>\u201d, Priority nanotechnology support program review committee meeting, Japan Synchrotron Radiation Research Institute, Hyogo (2009)<\/h4>\n<\/li>\n<\/ol>\n

                 <\/h4>\n
                \n

                Presentations<\/strong><\/h2>\n
                  \n
                1. \n

                  Matsuzaki, H. Hiramatsu, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of thin film field-effect transistor using deep-UV transparent oxide semiconductor Ga2<\/span>O3<\/span><\/em>\u201d, The 6th<\/span> Pacific Rim Conference on Ceramic and Glass Technology (PacRim6), Maui, Hawaii (2005\/9\/11-16).<\/h4>\n<\/li>\n
                2. \n

                  Sugiura, H. Ohta, K. Nomura<\/u><\/strong>, H. Yanagi, M. Hirano, H. Hosono, and K. Koumoto, \u201cHigh-quality epitaxial film growth of superconducting sodium-cobalt oxyhydrate, Na0.3<\/span>CoO2<\/span>\u00b71.3H2<\/span>O<\/em>\u201d, 6th Pacific Rim Conference on Ceramic and Glass Technology (PacRim6) Maui, USA (2005\/9\/11-16).<\/h4>\n<\/li>\n
                3. \n

                  Matsuzaki, H. Hiramatsu, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cField-effect transistor using extremely wide bandgap oxide semiconductor Ga2<\/span>O3<\/span><\/em>\u201d 4th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-4), Tokyo, Japan (2005\/4\/7-8, Tokyo).<\/h4>\n<\/li>\n
                4. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, A. Takagi, H. Yanagi, M. Hirano, and H. Hosono, \u201cRoom Temperature Fabrication of Large Mobility (>10cm2<\/span>(Vs)-1<\/span>) Amorphous Oxide Semiconductor and Application to Thin Film Transistor<\/em>\u201d, Second Int. Conf. Adv. Mater. and Nanotechnology (AMN2), Queenstown, New Zealand (2005\/2\/6-11).<\/h4>\n<\/li>\n
                5. \n

                  Ogo, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cGrowth and structures of single-crystalline thin films of RAO3<\/span>(MO)m<\/span> (R = Lu and In; A = Ga and Fe; M = Zn, Mg, Fe, Mn and Co; m = integer) by reactive solid-phase epitaxy<\/em>\u201d, 4th<\/span> International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-4), Tokyo, Japan (2005\/4\/7-8).<\/h4>\n<\/li>\n
                6. \n

                  Kamiya, Y. Toda, S. Aiba, M. Miyakawa, K. Nomura<\/u><\/strong>, K. Hayashi, M. Hirano, and H. Hosono, \u201cField-effect transistor and field emission display devices using nonporous inorganic semiconductor C12A7:e–<\/span><\/em>\u201d, Second International Conference<\/em> on Advanced Materials and Nanotechnology<\/em>(<\/strong>AMN2), Queenstown, New Zealand, (2005\/2\/6-11).<\/h4>\n<\/li>\n
                7. \n

                  Nomura<\/u><\/strong>, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, \u201cMaterial exploration of amorphous oxide semiconductor and room temperature fabrication of high performance transparent flexible TFT<\/em>\u201d, The 2th<\/span> Thin Film Materials & Devices Meeting, B-8, Kyoto (2005\/11\/4-5\uff09<\/h4>\n<\/li>\n
                8. \n

                  Nomura<\/u><\/strong>, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cRoom temperature fabrication of transparent flexible TFT using amorphous oxide semiconductor<\/em>\u201d, The 52th<\/span> JSAP Spring Meeting, Saitama (2005).<\/h4>\n<\/li>\n
                9. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, A. Takagi, M. Hirano, and H. Hosono, \u201cMaterial design of amorphous oxide semiconductor toward high performance flexible TFT<\/em>\u201d, The 52th<\/span> JSAP Spring Meeting, Saitama (2005).<\/h4>\n<\/li>\n
                10. \n

                  Yabuta, M. Sano, K. Abe, T. Den, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cRoom temperature fabrication of amorphous oxide channel TFT by RF sputtering<\/em>\u201d, The 66th<\/span> JSAP Fall Meeting, Tokushima (2005\/9\/7-11).<\/h4>\n<\/li>\n
                11. \n

                  Sugiura, H. Ohta, K. Nomura<\/u><\/strong>, H. Hosono, K. Komoto, \u201cFabrication of epitaxial film of p-type oxide thermoelectric material Srx<\/span>CoO2<\/span> (x ~ 0.4) and thermoelectric property<\/em>\u201d, Academic Forum on Ceramics Research in Tokai, The Ceramic Society of Japan, Aichi (2005\/12\/2).<\/h4>\n<\/li>\n
                12. \n

                  Sugiura, H. Ohta, K. Nomura<\/u><\/strong>, H. Yanagi, M. Hirano, H. Hosono, and K. Komoto, \u201cFabrication and characterization of superconductor Na0.35<\/span>CoO2<\/span>\u00b71.3H2<\/span>Oepitaxail film<\/em>\u201d, The 52th<\/span> JSAP Spring Meeting, Saitama (2005\/3\/30).<\/h4>\n<\/li>\n
                13. \n

                  Matsuzaki, H. Hiramatsu, K. Nomura<\/u><\/strong>, K. Tajima, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cField-effect transistor using wide bandgap oxide semiconductor Ga2<\/span>O3<\/span> film<\/em>\u201d, The 2th<\/span> Thin Film Materials & Devices Meeting, B-9, Kyoto (2005\/11\/4-5\uff09<\/h4>\n<\/li>\n
                14. \n

                  Ogo, K. Nomura<\/u><\/strong>, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, \u201cFilm growth of multicomponent oxide semiconductor with layered structure by reactive solid phase epitaxy<\/em>\u201d, The 2th<\/span> Thin Film Materials & Devices Meeting, B-10, Kyoto (2005\/11\/4-5\uff09<\/h4>\n<\/li>\n
                15. \n

                  Matsuzaki, H. Hiramatsu, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cField effect transistor using deep UV transparent oxide semiconductor Ga2<\/span>O3<\/span><\/em>\u201d, 2005 Annual meeting of The Ceramic Society of Japan, Okayama (2005\/3\/22-24)<\/h4>\n<\/li>\n
                16. \n

                  Sugiura, H. Ohta, K. Nomura<\/u><\/strong>, H. Yanagi, M. Hirano, H. Hosono, and K. Komoto, \u201cFabrication of epitaxial film of hydroid cobalt oxide Na0.3<\/span>CoO2\u00b71<\/span>.3H2<\/span>O and the superconducting property<\/em>\u201d, The 52th<\/span> JSAP Spring Meeting, Saitama (2005).<\/h4>\n<\/li>\n
                17. \n

                  Hosono, K. Nomura<\/u><\/strong>, and T. Kamiya, \u201cCarrier transport of n-type transparent oxide semiconductor and Fabrication of high performance transparent flexible transistor<\/em>\u201d, 2005 Annual meeting of The Ceramic Society of Japan, Okayama (2005\/3\/22-24)<\/h4>\n<\/li>\n
                18. \n

                  Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cRecent progress in amorphous oxide semiconductor: From structure, carrier transport to TFT performance<\/em>\u201d, The 7th International Conference on Nano-Molecular Electronics (ICNME 2006), SI-2I, Kobe, Japan (2006\/12\/13-15).<\/h4>\n<\/li>\n
                19. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, and M. Hirano, and H. Hosono, \u201cUniversal relation observed in carrier transport properties in amorphous oxide semiconductors with different chemical compositions<\/em>\u201d, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2006), Nice, France (2006\/5\/29-6\/2).<\/h4>\n<\/li>\n
                20. \n

                  Matsuzaki, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cSide-gated nanowire field-effect transistor using amorphous oxide semiconductor channel<\/em>\u201d, XIII International Workshop on Oxide Electronics, Ischia, Italy (2006\/10\/8-11).<\/h4>\n<\/li>\n
                21. \n

                  Kamiya, K. Nomura<\/u><\/strong>, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, \u201cAtomic and electronic structure of amorphous oxide semiconductor InGaZnO4<\/span> studied by ab-initio calculations<\/em>\u201d, XIII International Workshop on Oxide Electronics (WOE13) Ischia, Italy (2006\/10\/8-11).<\/h4>\n<\/li>\n
                22. \n

                  Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cCombinatorial Study on In-Ga-Zn-O Semiconductor Films as Active-channel Layers for Thin-film Transistor<\/em>\u201d, Mater. Res. Soc. Symp. Spring Meeting, San Francisco, USA, (2006\/4\/17-21).<\/h4>\n<\/li>\n
                23. \n

                  Ofuji, K. Abe, N. Kaji, R. Hayashi, M. Sano, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cIntegrated circuits based on amorphous indium-gallium-zinc-oxide-channel thin-film transistors<\/em>\u201d, Electrochemical Society (ECS) 8th Thin Film Transistor Technology (TFTT VIII) symposium, Cancun, Mexico, (2006\/10\/29-11\/3).<\/h4>\n<\/li>\n
                24. \n

                  Ohta, S-W. Kim, K. Nomura<\/u><\/strong>, S. Ohta, M. Hirano, H. Hosono, and K. Koumoto, \u201cGiant Thermopower of 2DEG Localized at the Heterointerface of TiO2<\/span>\/SrTiO3<\/span><\/em>\u201d JAPAN NANO 2006, Tokyo, Japan (2006\/02\/20-21).<\/h4>\n<\/li>\n
                25. \n

                  Kumomi, N. Kaji, H. Yabuta, M. Sano, K. Abe, T. Den, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cAmorphous Oxide Channel TFTs Fabricated with RF Sputtering Method<\/em>\u201d, International TFT Conference 2006 (ITC06), Fukuoka, Japan (2006\/1\/19-20).<\/h4>\n<\/li>\n
                26. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, \u201cAnalysis of local atomic structure of amorphous oxide semiconductor In-Ga-Zn-O by EXAFS and ab-initio structural relaxation calculation\u201d<\/em>, The 67th<\/span> JSAP Fall Meeting, 7a-ZK-5, Shiga (2006\/8\/29-9\/1).<\/h4>\n<\/li>\n
                27. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, \u201cLocal atomic structure and electronic structure for amorphous oxide semiconductor In-Ga-Zn-O<\/em>\u201d, The 3th<\/span> Thin Film Materials & Devices Meeting, 156, Nara (2006\/11\/10-1).<\/h4>\n<\/li>\n
                28. \n

                  Ogo, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cOptical and electrical property of new layered oxide compound In3<\/span>FeTi2<\/span>O10<\/span><\/em>\u201d, The 3th<\/span> Thin Film Materials & Devices Meeting, 164, Nara (2006\/11\/10-11).<\/h4>\n<\/li>\n
                29. \n

                  Katase, K. Nomura<\/u><\/strong>, H. Yanagi, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, \u201cEffect of Bi flux on the film growth during reactive solid phase epitaxy of homologous compound InGaO3<\/span>(ZnO)m<\/span><\/em>\u201d, The 3th<\/span> Thin Film Materials & Devices Meeting, 162, Nara (2006\/11\/10-11).<\/h4>\n<\/li>\n
                30. \n

                  Nishio, H. Miyakawa, K. Nomura<\/u><\/strong>, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of 12CaO\u00b77Al2<\/span>O3<\/span> electride nano wire<\/em>\u201d, The 3th<\/span> Thin Film Materials & Devices Meeting, 160, Nara (2006\/11\/10-11).<\/h4>\n<\/li>\n
                31. \n

                  Matsuzaki, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of amorphous oxide semiconductor nano wire FET<\/em>\u201d, The 3th<\/span> Thin Film Materials & Devices Meeting, 158, Nara (2006\/11\/10-11).<\/h4>\n<\/li>\n
                32. \n

                  Sugiura, H. Ohta, A. Mizutani, K. Nomura<\/u><\/strong>, T. Saito, Y. Ikuhara, H. Yanagi, M. Hirano, H. Hosono, and K. Komoto, \u201cFabrication of epitaxial film of layered cobalt oxide by reactive solid phase epitaxy and thermoelectric property<\/em>\u201d, The 67th<\/span> JSAP Fall Meeting, Invited, Shiga (2006\/8\/29-9\/1).<\/h4>\n<\/li>\n
                33. \n

                  Ohta, S.W. Kim, K. Nomura<\/u><\/strong>, S. Ohta, T. Nomura, M. Hirano, H. Hosono, and K. Komoto, \u201cGiant thermoelectric Seebeck coefficient of a two-dimensional electron gas at TiO2<\/span>\/SrTiO3 <\/span>heterointerface<\/em>\u201d, The 53th<\/span> JSAP Spring Meeting, Tokyo (2006\/3\/22).<\/h4>\n<\/li>\n
                34. \n

                  Kaji, M. Ofuji, C.L. Chang, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cFabrication of ring oscillator using amorphous oxide semiconductor TFT<\/em>\u201d, The 67th<\/span> JSAP Fall Meeting, Shiga (2006\/8\/29-9\/1).<\/h4>\n<\/li>\n
                35. \n

                  Sugiura, H. Ohta, K. Nomura<\/u><\/strong>, M. Hirano, H. Hosono, and K. Komoto, \u201cMetallization of 12CaO\u00b77Al2<\/span>O3<\/span> crystal<\/em>\u201d, The 53th<\/span> JSAP Spring Meeting, Tokyo (2006\/3\/22-26).<\/h4>\n<\/li>\n
                36. \n

                  Sugiura, H. Ohta, K. Nomura<\/u><\/strong>, M. Hirano, H. Hosono, and K. Komoto, \u201cFabrication of high quality Ca3<\/span>Co4<\/span>O9<\/span> epitaxial film by reactive solid phase epitaxy\u201d<\/em>, The 53th<\/span> JSAP Spring Meeting, Tokyo (2006\/3\/22-26).<\/h4>\n<\/li>\n
                37. \n

                  Matsuzaki, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cOperation characteristics of amorphous oxide semiconductor based nano wire field-effect transistor<\/em>\u201d, The 67th<\/span> JSAP Fall Meeting, Shiga (2006\/8\/29-9\/1).<\/h4>\n<\/li>\n
                38. \n

                  Ogo, K. Nomura<\/u><\/strong>, H. Yanagi<\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cOptical and electrical property of In3<\/span>FeTi2<\/span>O10<\/span> epitaxial film\u201d<\/em>, The 67th<\/span> JSAP Fall Meeting, Shiga (2006\/8\/29-9\/1).<\/h4>\n<\/li>\n
                39. \n

                  Kamiya, K. Nomura<\/u><\/strong>, H. Ohta, M. Hirano, and H. Hosono, \u201cAnalysis of local atomic structure and electronic structure for amorphous oxide semiconductor In-Ga-Zn-O by molecular dynamics and ab-initio calculation\u201d<\/em>, The 67th<\/span> JSAP Fall Meeting, Shiga (2006\/8\/29-9\/1).<\/h4>\n<\/li>\n
                40. \n

                  Kamiya, K. Nomura<\/u><\/strong>, M. Hirano, and H. Hosono, \u201cMaterial design of amorphous oxide semiconductor and TFT characteristics of flexible transistor<\/em>\u201d, 2006 Annual meeting of The Ceramic Society of Japan, Tokyo (2006\/3\/14-16)<\/h4>\n<\/li>\n
                41. \n

                  Itagaki, T. Iwasaki, T. Den, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cField effect transistor using In-Ga-Zn-O films and the chemical composition dependency<\/em>\u201d, The 53th<\/span> JSAP Spring Meeting, Tokyo (2006\/3\/22-26).<\/h4>\n<\/li>\n
                42. \n

                  L. Chang, M. Sano, M. Majima, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cFabrication of amorphous oxide channel TFT on plastic substrate<\/em>\u201d, The 53th<\/span> JSAP Spring Meeting, Tokyo (2006\/3\/22-26).<\/h4>\n<\/li>\n
                43. \n

                  Nomura<\/u><\/strong>, T. Kamiya, T. Uruga, H. Ohta, M. Hirano, and H. Hosono, \u201cRelationship of carrier transport properties, local atomic configuration and tails states in ionic amorphous semiconductor, In-Ga-Zn-O<\/em>\u201d, The 34th<\/span> International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan (2007\/10\/15-18).<\/h4>\n<\/li>\n
                44. \n

                  Hosono, K. Nomura<\/u><\/strong>, Yoichi Ogo, and T. Kamiya, \u201cFactors controlling electron transport properties in transparent amorphous oxide semiconductors<\/em>\u201d, The 22nd<\/span> International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Colorado, USA (2007\/8\/21-25).<\/h4>\n<\/li>\n
                45. \n

                  Katase, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of ScAlMgO4<\/span> single-crystalline thin films by a reactive solid phase epitaxy and its application to lattice-matched buffer layer for ZnO<\/em>\u201d, 2007 Korea-Japan Workshop on Nanomaterials for IT, O-10 , Seoul, South Korea (2007\/12\/27-28).<\/h4>\n<\/li>\n
                46. \n

                  Shimura, K. Nomura,<\/u><\/strong> H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cSpecific contact resistance at interfaces between a-IGZO and various electrodes<\/em>\u201d, 2007 Korea-Japan Workshop on Nanomaterials for IT, O-9, Seoul, South Korea (2007\/12\/27-28).<\/h4>\n<\/li>\n
                47. \n

                  Yanagi, K.-B. Kim, M. Kikuchi, M. Miyakawa, H. Hiramatsu, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cPhotoelectron Spectroscopic Study of C12A7:e- Cathode\/Alq3<\/span> and LaCuOSe Anode\/NPB Interfaces: Formation of Low Carrier Injection Barriers for OLEDs<\/em>\u201d, The 34th International Symposium on Compound Semiconductors (ISCS), Kyoto, Japan (2007\/10\/15-18).<\/h4>\n<\/li>\n
                48. \n

                  Kamiya, K. Nomura<\/u><\/strong>, M. Hirano, and H. Hosono, \u201cElectronic structures of oxygen defect and hydrogen in amorphous oxide semiconductor, a-In-Ga-Zn-O<\/em>\u201d, The 34th<\/span> International Symposium on Compound Semiconductors (ISCS), Kyoto, Japan (2007\/10\/15-18).<\/h4>\n<\/li>\n
                49. \n

                  Katase, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, \u201cFabrication of ScAlMgO4<\/span> single-crystalline thin films and application to lattice-matched buffer layer for ZnO and GaN<\/em>\u201d, 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5), 21pP53, Shonan, Japan, (2007\/5\/21-22).<\/h4>\n<\/li>\n
                50. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, T. Uruga, M. Hirano and H. Hosono, \u201cRelationship between In-In distance and Electron Mobility in Ionic Amorphous Semiconductor In-Ga-Zn-O5<\/span><\/em>\u201d, The International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5) 22pO09, Shonan, Japan, (2007\/5\/21-22).<\/h4>\n<\/li>\n
                51. \n

                  Mine, H. Yanagi, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano and H. Hosono, \u201cControl of carrier concentration in CuGaO2<\/span> epitaxial film for p-channel transparent transistor<\/em>\u201d, 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5) 21pP41, Shonan, Japan, (2007\/5\/21-22).<\/h4>\n<\/li>\n
                52. \n

                  Shimura, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono \u201cSpecific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes<\/em>\u201d5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-5), 21pP56, Shonan, Japan, (2007\/5\/21-22).<\/h4>\n<\/li>\n
                53. \n

                  Yanagi, K.-B. Kim, M. Kikuchi, M. Miyakawa, H. Hiramatsu, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cFormation of low carrier injection barrier at C12A7:e- cathode\/Alq3<\/span> and LaCuOSe anode\/NPB interfaces studied by photoelectron spectroscopy<\/em>\u201d, The 5th<\/span> International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5), 21pP25, Shonan, Japan, (2007\/5\/21-22).<\/h4>\n<\/li>\n
                54. \n

                  Nishio, K. Nomura<\/u><\/strong>, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication and transport properties of 12CaO\u03877Al2<\/span>O3<\/span> (C12A7) electride nanowire<\/em>\u201d, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-6-5, Strasbourg, France, (2007\/5\/28-6\/1).<\/h4>\n<\/li>\n
                55. \n

                  Itagaki, T. Iwasaki, T. Den, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cZn-In-O based thin-film transistors: Compositional dependence<\/em>\u201d, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-6-4, Strasbourg, France, (2007\/5\/28-6\/1).<\/h4>\n<\/li>\n
                56. \n

                  Ogo, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, \u201cEffects of thermal annealing on amorphous oxide semiconductor Sn-Ga-Zn-O based TFTs<\/em>\u201d, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-5-6, Strasbourg, France, (2007\/5\/28-6\/1).<\/h4>\n<\/li>\n
                57. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, M. Hirano and H. Hosono, \u201cEffects of thermal annealing and structural relaxation on carrier transport and optical properties in ionic amorphous semiconductors In-Ga-Zn-O<\/em>\u201d, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-5-3, Strasbourg, France, (2007\/5\/28-6\/1).<\/h4>\n<\/li>\n
                58. \n

                  Kamiya, K. Tajima, K. Nomura<\/u><\/strong>, H. Yanagi, and H. Hosono, \u201cInterface electronic structures of transparent oxide semiconductors and metals: First-principle study<\/em>\u201d, European Mater. Res. Soc. Symp. Spring Meeting (E-MRS2007), I-3-4, Strasbourg, France, (2007\/5\/28-6\/1).<\/h4>\n<\/li>\n
                59. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, \u201cRelationship between tail state and carrier transport for transparent amorphous oxide semiconductor In-Ga-Zn-O<\/em>\u201d, The 4th<\/span> Thin Film Materials & Devices Meeting, P-29, Kyoto (2007\/11\/2-3).<\/h4>\n<\/li>\n
                60. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, \u201cRelationship between local structure and carrier transport for ionic transparent amorphous oxide semiconductor In-Ga-Zn-O<\/em>\u201d, The 54th<\/span> JSAP Spring Meeting, 30a-ZA-11, Tokyo (2007\/3).<\/h4>\n<\/li>\n
                61. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, \u201cTail state and carrier transport for ionic transparent amorphous oxide semiconductor In-Ga-Zn-O<\/em>\u201d, The 54th<\/span> JSAP Spring Meeting, 30a-ZA-10, Tokyo (2007\/3).<\/h4>\n<\/li>\n
                62. \n

                  Nishio, H. Miyakawa, K. Nomura<\/u><\/strong>, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of 30nm-width nano-wire with high electrical conductivity using nonporous crystalline 12CaO\u03877Al2<\/span>O3<\/span> (C12A7) and the characterization of electrical conduction<\/em>\u201d, The 4th<\/span> Thin Film Materials & Devices Meeting, P-32, Kyoto (2007\/11\/2-3).<\/h4>\n<\/li>\n
                63. \n

                  Ogo, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cAmorphous Sn-Ga-Zn-O thin film transit and effect of thermal annealing on the subgap defect state<\/em>\u201d, The 4th<\/span> Thin Film Materials & Devices Meeting, P-30, Kyoto (2007\/11\/2-3).<\/h4>\n<\/li>\n
                64. \n

                  Shimura, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cSpecific resistance of amorphous oxide semiconductor In-Ga-Zn-O \/ metal interface<\/em>\u201d, The 4th<\/span> Thin Film Materials & Devices Meeting, P-28, Kyoto (2007\/11\/2-3).<\/h4>\n<\/li>\n
                65. \n

                  Yanagi, M. Kikuchi, B. Kim, H. Hiramatsu, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cElectronic structure analysis of LaCuOSe\/NPB interface by photoelectron spectroscopy and formation of low barrier hole injection layer<\/em>\u201d, The 54th<\/span> JSAP Spring Meeting, 28a-SK-3, Tokyo (2007\/3).<\/h4>\n<\/li>\n
                66. \n

                  Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cField\u2013effect transistor using Zn-In-O system and the dependency of chemical composition\u201d<\/em>, The 54th<\/span> JSAP Spring Meeting, 30a-ZA-1, Tokyo (2007\/3).<\/h4>\n<\/li>\n
                67. \n

                  Ogo, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of ionic amorphous oxide semiconductor Sn-Ga-Zn-O TFT and the annealing effect<\/em>\u201d, The 54th<\/span> JSAP Spring Meeting, 29p-ZA-11, Tokyo (2007\/3).<\/h4>\n<\/li>\n
                68. \n

                  Sugiura, H. Ohta, Y. Ishida, K. Nomura<\/u><\/strong>, M. Hirano, H. Hosono, and K. Komoto, \u201cCarrier transport for Cax<\/span>CoO2<\/span> epitaxial films with different Ca ion ordering\u201d<\/em>, The 68th<\/span> JSAP Fall Meeting, 7a-ZK-5, Hokaidou (2007\/9\/4-8).<\/h4>\n<\/li>\n
                69. \n

                  Tajima, K. Nomura<\/u><\/strong>, H. Yanagi, M. Hirano, T. Kamiya, and H. Hosono, \u201cElectronic structure of Au\/ZnO interface by first principle calculation<\/em>\u201d, The 45th<\/span> basic science division of The Ceramic Society of Japan, 1A21, Sendai (2007\/1\/22-23).<\/h4>\n<\/li>\n
                70. \n

                  Kikuchi, B. Kim, H. Miyakawa, K. Nomura<\/u><\/strong>, H. Hiramatsu, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cObservation of electronic structure of transparent conductive oxide\/organic semiconductor interface by photoelectron spectroscopy<\/em>\u201d, The 45th<\/span> basic science division of The Ceramic Society of Japan, 1C03, Sendai (2007\/1\/22-23).<\/h4>\n<\/li>\n
                71. \n

                  -H. Hsieh, T. Kamiya, K. Nomura<\/u><\/strong>, H. Hosono, and C.-C. Wu, \u201cModeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States<\/em>\u201d, The SID International Symposium Seminar, and Exhibition (SID2008), P-29, Los Angeles USA (2008\/5\/18-23).<\/h4>\n<\/li>\n
                72. \n

                  Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cThe Origins of High Mobility and Low Operation Voltage of Amorphous Oxide Channel TFTs<\/em>\u201d, The 21st<\/span> Annual Meeting of The IEEE Lasers & Electro-Optics Society, MG 1, Newport Beach, USA, (2008\/11\/9-13).<\/h4>\n<\/li>\n
                73. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, \u201cCarrier transport and subgap states in highly-doped a-In-Ga-Zn-O films<\/em>\u201d, The 2nd<\/span> International Symposium on Transparent Conductive Oxides (IsTCO2008), Crete, Greece (2008\/10\/22-26).<\/h4>\n<\/li>\n
                74. \n

                  Sato, R. Hayashi, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cAmorphous In-Ga-Zn-O thin-film transistor with bottom-gate coplanar structure<\/em>\u201d, The 2nd<\/span> International Symposium on Transparent Conductive Oxides (IsTCO2008), Crete, Greece (2008\/10\/22-26).<\/h4>\n<\/li>\n
                75. \n

                  Kamiya, K. Nomura<\/u><\/strong>, M. Hirano, and H. Hosono, \u201cPercolation conduction theory for crystalline and amorphous InGaZnO4<\/span><\/em>\u201d, The 2nd<\/span> International Symposium on Transparent Conductive Oxides (IsTCO2008), Crete, Greece (2008\/10\/22-26).<\/h4>\n<\/li>\n
                76. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, \u201cExistence of subgap states near valence band maximum and relationship with carrier transport properties<\/em>\u201d, The IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC2008), Kyoto, Japan, (2008\/10\/20-22).<\/h4>\n<\/li>\n
                77. \n

                  Kamiya, K. Nomura<\/u><\/strong>, Masahiro Hirano, and H. Hosono, \u201cTheory of Electron Transport in Disordered Oxides: Percolation Model<\/em>\u201d, The IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC2008), Kyoto, Japan, (2008\/10\/20-22).<\/h4>\n<\/li>\n
                78. \n

                  Ogo, H. Hiramatsu, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cTin monooxide as a 5s based p-type oxide semiconductor: Epitaxial film growth and thin film transistor<\/em>\u201d, European Mater. Res. Soc. Symp. Fall Meeting, B02, Warsaw, Poland (2008\/9\/15-19).<\/h4>\n<\/li>\n
                79. \n

                  T, Katase, Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M, Hirano and H. Hosono, \u201cLow-Temperature, Large-Domain Growth of ZnO and GaN Epitaxial Films on Lattice-Matched Buffer Layers<\/em>\u201d, European Mater. Res. Soc. Symp. Fall Meeting, Thes-16-16:30, Warsaw, Poland (2008\/9\/15-19).<\/h4>\n<\/li>\n
                80. \n

                  Katase, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, \u201cLow-Temperature, Large-Domain Growth of ZnO and GaN Epitaxial Films on Lattice-Matched Buffer Layers<\/em>\u201d, Joint Conferences of The 2nd International Conference on the Science and Technology for Advanced Ceramics and The 1st International Conference on Science and Technology of Solid Surface and Interface (STAC-STSI), Chiba, Japan (2008\/5\/30-6\/1).<\/h4>\n<\/li>\n
                81. \n

                  Matsuzaki, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cHigh mobility Cu2<\/span>O epitaxial films and the application to p-channel thin film transistor<\/em>\u201d, European Mater. Res. Soc. Symp. Fall Meeting, Warsaw, Poland (2008\/9\/15-19).<\/h4>\n<\/li>\n
                82. \n

                  Nomura<\/u><\/strong>, Y. Kikuchi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, \u201cImprovement of TFT characteristics of a-In-Ga-Zn-O TFT by wet oxygen annealing<\/em>\u201d The 5th<\/span> Thin Film Materials & Devices Meeting, Nara (2008\/10\/31-11\/1).<\/h4>\n<\/li>\n
                83. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yong, K. Kobayashi, M. Hirano, and H. Hosono, \u201cAnalysis of subgap state for transparent amorphous oxide semiconductor by hard X-ray spectroscopy<\/em>\u201d, The 55th<\/span> JSAP Spring Meeting, 30a-V-5, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                84. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, \u201cElimination of defect and stabilization for a-In-Ga-Zn-O TFT by wet oxygen annealing<\/em>\u201d, The 69th<\/span> JSAP Fall Meeting, 5p-J-5, Nagoya (2008\/9\/2-9).<\/h4>\n<\/li>\n
                85. \n

                  Ogo, H. Hiramatsu, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cEpitaxial growth of 5sorbital based p-type oxide semiconductor SnO and p-channel transistor<\/em>\u201d, The 69th<\/span> JSAP Fall Meeting, 2p-J-4, Nagoya (2008\/9\/2-9).<\/h4>\n<\/li>\n
                86. \n

                  Shimizu, K. Nomura<\/u><\/strong>, M. Hirano, T. Kamiya, and H. Hosono, \u201cCharacterization of Tail state in amorphous oxide semiconductor a-In-Ga-Zn-O film by CPM method (2)<\/em>\u201d, The 69th<\/span> JSAP Fall Meeting, 4p-N-8, Nagoya (2008\/9\/2-9).<\/h4>\n<\/li>\n
                87. \n

                  Katase, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi<\/strong>, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of single-crystalline film of ScAlMgO4<\/span> by R-SPE method and the application to lattice matched buffer layer<\/em>\u201d, The 55th<\/span> JSAP Spring Meeting, 30p-V-4, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                88. \n

                  Yabuta, K. Takada, M. Shimada, N. Kachi, T. Hayashi, H. Kumomi, I. Hirosawa, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cElectrical conduction and structure for amorphous In-Ga-Zn-O film controlled by post thermal annealing\u201d<\/em>\u201d, The 55th<\/span> JSAP Spring Meeting, 30a-V-10, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                89. \n

                  Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cCarrier transport mechanism for oxide semiconductor InGaZnO4 with structural randomness\u201d<\/em>, The 55th<\/span> JSAP Spring Meeting, 30a-V-9, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                90. \n

                  Shimizu, K. Nomura<\/u><\/strong>, M. Hirano, T. Kamiya, and H. Hosono, \u201cCharacterization of Tail state in amorphous oxide semiconductor a-In-Ga-Zn-O film by CPM method<\/em>\u201d, The 55th<\/span> JSAP Spring Meeting, 30a-V-8, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                91. \n

                  Kamiya, H.H. Heish, K. Nomura<\/u><\/strong>, and H. Hosono, C.-C. Wu, \u201cSubgap state analysis of amorphous oxide a-InGaZnO4<\/span> TFT by TFT simulation\u201d<\/em>, The 55th<\/span> JSAP Spring Meeting, 30a-V-7, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                92. \n

                  Nakanishi, M. Kimura, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cExtraction of trap state and characterization of amorphous In-Ga-Zn-O thin film transistor<\/em>\u201d, The 55th<\/span> JSAP Spring Meeting, 30a-V-6, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                93. \n

                  Matsuzaki, K. Nomura,<\/u><\/strong> H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of high mobility p-type oxide semiconductor Cu2<\/span>O thin film and field effect<\/em>, The 55th<\/span> JSAP Spring Meeting, 29p-L-8, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                94. \n

                  Kurita, H. Ohta, R. Asahi, Y. Masuoka, K. Nomura<\/u><\/strong>, H. Hosono, and K. Komoto, \u201cSeebeck coefficient for two-dimensional electron gas in field induced SrTiO3<\/span><\/em>\u201d, The 55th<\/span> JSAP Spring Meeting, 29p-L-5, Tokyo (2008\/3\/27-30).<\/h4>\n<\/li>\n
                95. \n

                  Kachi, K. Takahashi, Katsumi Abe, T. Hayashi, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cTFT characteristics of back channel etched amorphous In-Ga-Zn-O TFT<\/em>\u201d, The 69th<\/span> JSAP Fall Meeting, 5p-J-3, Nagoya (2008\/9\/2-9).<\/h4>\n<\/li>\n
                96. \n

                  Sugiura, H. Ohta, A. Ishida, R. Huang, Y. Ikuhara, K. Nomura<\/u><\/strong>, H. Hosono, and K. Komoto, \u201cStructural Transformation of Ca-Arrangements and Carrier Transport Properties in Ca0.33<\/span>CoO2<\/span> Epitaxial Films<\/em>\u201d, The 69th<\/span> JSAP Fall Meeting, 4p-J-10, Nagoya (2008\/9\/2-9).<\/h4>\n<\/li>\n
                97. \n

                  Yoshikawa, D. Kurita, H. Ohta, R. Asahi, Y. Masuoka, K. Nomura<\/u><\/strong>, H. Hosono, and K. Komoto, \u201cSeebeck coefficient for two-dimensional electron gas in field induced SrTiO3<\/span>(2)<\/em>\u201d, The 69th<\/span> JSAP Fall Meeting, 2p-J-11, Nagoya (2008\/9\/2-9).<\/h4>\n<\/li>\n
                98. \n

                  Matsuzaki, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cEffect of thermal annealing on carrier transport for p-type oxide semiconductor Cu2<\/span>O epitaxial film\u201d, <\/em>The 69th<\/span> JSAP Fall Meeting, 2p-J-3, Nagoya (2008\/9\/2-9).<\/h4>\n<\/li>\n
                99. \n

                  Nishio, K. Nomura<\/u><\/strong>, H. Miyakawa, H. Yanagi, K. Hayashi, T. Kamiya, M. Hirano, and H. Hosono, \u201cControl of electrical conductivity for electron doped 12CaO\u03877Al2<\/span>O3<\/span>(C12A7:e-) nano wire<\/em>\u201d, 2008 Annual Meeting of The Ceramic society of Japan, Nigata (2008\/3\/20 -21).<\/h4>\n<\/li>\n
                100. \n

                  Omura, T. Iwasaki, H. Kumomi, K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cFirst-principles calculation for effect of impurities on electronic states of amorphous In-Ga-Zn-O<\/em>\u201d, Mater. Res. Soc. Symp. Proc. 1109-B04-02, Boston, USA (2009\/11\/9).<\/h4>\n<\/li>\n
                101. \n

                  Hasegawa, T. Nakanishi, M. Sakemi, M. Kimura, K. Nomura<\/u><\/strong>, T. Kamiya, H. Hosono, T. Aoki, T. Kawase, and S. Inoue,\u3000 \u201cCharacteristic comparison between complementary inverter using amorphous oxide TFT and polymer organic TFT and n-type inverter using amorphous oxide TFTs<\/em>\u201d, IDW’09, Miyazaki, Japan (2009\/12\/9-11).<\/h4>\n<\/li>\n
                102. \n

                  Shimizu, K. Nomura<\/u><\/strong>, M. Hirano, T. Kamiya, and H. Hosono, \u201cCharacterization of subgap states inn amorphous In-Ga-Zn-O by constant photocurrent method<\/em>\u201d, The 23rd<\/span> International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23), Utrecht,\u3000Netherland (2009\/8\/28).<\/h4>\n<\/li>\n
                103. \n

                  Katase, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, \u201cAtomic and electronic structures of ScAlMgO4 and over-grown GaN epitaxial film<\/em>\u201d, 3rd<\/span> International Symposium on Science and Technology of Advanced Ceramics (STAC-3) 16pP037, Yokohama, Japan (2009\/6\/ 16-18).<\/h4>\n<\/li>\n
                104. \n

                  Kumada, K. Matsuzaki, K. Nomura<\/u><\/strong>, H. Hosono, and T. Susaki, \u201cCharacterization of MgO(111) thin films grown on Al2O3(0001)substrates<\/em>\u201d, 3rd<\/span> International Symposium on Science and Technology of Advanced Ceramics(STAC-3), 16pP027, Yokohama, Japan (2009\/6\/ 16-18).<\/h4>\n<\/li>\n
                105. \n

                  Nomura<\/u><\/strong>, T. Kamiya, H. Yanagi, E. Ikenaga, K. Kobayashi, M. Hirano and H. Hosono, \u201cElectronic structure analysis of transparent amorphous oxide semiconductor, a-In-Ga-Zn-O, by angle-resolved hard x-ray photoelectron spectroscopy<\/em>\u201d, 3rd<\/span> International Symposium on Science and Technology of Advanced Ceramics, 16pHsO05, Yokohama, Japan (2009\/6\/ 16-18).<\/h4>\n<\/li>\n
                106. \n

                  Nishio, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, Masahiro Hirano, and H. Hosono, \u201cShort-channel nanowire transistor using a nonporous crystal semiconductor 12CaO\u00b77Al2<\/span>O3<\/span><\/em>\u201d, 3rd International Symposium on Science and Technology of Advanced Ceramics (STAC-3), 16pP026, Yokohama, Japan (2009\/6\/ 16-18).<\/h4>\n<\/li>\n
                107. \n

                  Kamiya, K. Nomura<\/u><\/strong>,<\/u> and H. Hosono, \u201cWhat have been clarified for amorphous oxide semiconductors?<\/em>\u201d, Int’l Display Manufacturing Conference (IDMC) \/ 3D Systems and Applications (3DSA) \/ Asia Display 2009 (IDMC\u00b73DSA\u00b7Asia Display’09, Thu-S22-03, Taipei, Taiwan (2009\/4\/27-30).<\/h4>\n<\/li>\n
                108. \n

                  H. Lee, K. Kawamura, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cSteady-state photoconductivity of amorphous-In-Ga-Zn-O<\/em>\u201d, The 6th<\/span> International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), 16p-P171, Tokyo, Japan (2009\/4\/15-17).<\/h4>\n<\/li>\n
                109. \n

                  Nomura<\/u><\/strong>, Y. Kikuchi, T. Kamiya, M. Hirano, and H. Hosono, \u201cOn the stability of a-In-Ga-Zn-O thin film transistor<\/em>\u201d, The 6th<\/span> International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), 17a-O006, Tokyo, Japan (2009\/4\/15-17).<\/h4>\n<\/li>\n
                110. \n

                  Kikuchi, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cDevice characteristics improvement of a-In-Ga-Zn-O TFTs by low temperature annealing<\/em>\u201d, The 6th<\/span> International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), 16p-P164, Tokyo, Japan (2009\/4\/15-17).<\/h4>\n<\/li>\n
                111. \n

                  Shinozaki, K. Nomura<\/u><\/strong>, T. Katase, T. Kamiya, M. Hirano, and H. Hosono, \u201cEpitaxial growth of GaN films on InGaZnO4<\/span> single crystalline buffer layer<\/em>\u201d, The 6th<\/span> International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), 15p-P005, Tokyo, Japan (2009\/4\/15-17).<\/h4>\n<\/li>\n
                112. \n

                  Nomura<\/u><\/strong>, T. Kamiya, N. Kobayashi, M. Hirano, and H. Hosono, \u201cBias stability for a-In-Ga-Zn-O TFT and the origin<\/em>\u201d, The 6th<\/span> Thin Film Materials & Devices Meeting, 3O06, Kyoto (2009\/11\/2-3).<\/h4>\n<\/li>\n
                113. \n

                  Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cOrigin of bias stress degradation for a-In-Ga-Zn-O TFT<\/em>\u201d, The 70th<\/span> JSAP Fall Meeting, 11p-J-5, Toyama (2009\/9\/8~11).<\/h4>\n<\/li>\n
                114. \n

                  Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cBias stress stability and the origin for a-In-Ga-Zn-O TFT<\/em>\u201d, The 56th<\/span> JSAP Spring Meeting, Tsukuba (2009\/3\/30-4\/2).<\/h4>\n<\/li>\n
                115. \n

                  Nakanishi, T. Hasegawa, M. Sakami, Y. Okumura, Y. Ueda, M. Kimura, K. Nomura<\/u><\/strong>, T. Kamiya, H. Hosono, T. Hiramatsu, M. Furuta, T. Hirao, and T. Aoki, \u201dExtraction of trap density for oxide thin film transistor and development of CTFT using oxide thin film transistor and polymer TFT<\/em>\u201d, The 6th<\/span> Thin Film Materials & Devices Meeting, 3P46, Kyoto (2009\/11\/2-3).<\/h4>\n<\/li>\n
                116. \n

                  Shinozaki, K. Nomura<\/u><\/strong>, T. Katase, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication <\/em>of single crystalline thin film of layered oxide crystal InGaZnO4 and the application to buffer layer<\/em>\u201d, The 6th<\/span> Thin Film Materials & Devices Meeting, 3P50, Kyoto (2009\/11\/2-3).<\/h4>\n<\/li>\n
                117. \n

                  Shao, K. Nomura<\/u><\/strong>, Y. Kikuchi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFormation mechanism of very thin a-In-Ga-Zn-O film and the TFT characteristics<\/em>\u201d, The 6th<\/span> Thin Film Materials & Devices Meeting, 2P51, Kyoto\uff082009\/11\/2-3\uff09.<\/h4>\n<\/li>\n
                118. \n

                  Y Kikuchi, Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cImprovement of TFT characteristics of a-In-Ga-Zn-O TFT by low temperature thermal annealing<\/em>\u201d, The 6th<\/span> Thin Film Materials & Devices Meeting, 2P37, Kyoto (2009\/11\/2-3).<\/h4>\n<\/li>\n
                119. \n

                  H. Lee, K. Kawamura, K. Nomura, T. Kamiya, and H. Hosono, \u201cPhotoconductivity characterization of amorphous oxide semiconductor a-In-Ga-Zn-O<\/em>\u201d, The 6th<\/span> Thin Film Materials & Devices Meeting, 3P38, Kyoto (2009\/11\/2-3).<\/h4>\n<\/li>\n
                120. \n

                  K Shimizu, S. Maeda, Nomura<\/u><\/strong>, M. Hirano, T. Kamiya, and H. Hosono, \u201cCharacterization of subgap defect for amorphous In-Ga-Zn-O films by CPM method<\/em>\u201d, The 6th<\/span> Thin Film Materials & Devices Meeting, 3O02, Kyoto (2009\/11\/2-3).<\/h4>\n<\/li>\n
                121. \n

                  Nishio, K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, and H. Hosono, \u201cSide gated field-effect transistor using electron doped 12CaO\u00b77Al2<\/span>O3<\/span> nanowire channel<\/em>\u201d, The 70th<\/span> JSAP Fall Meeting, 8a-H-1, Toyama (2009\/9\/8~11).<\/h4>\n<\/li>\n
                122. \n

                  Ohta, Y. Masuoka, R. Asahi, T. Kato, Y. Ikuhara, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cSrTiO3 <\/span>based field-effect transistor using amorphous 12CaO\u00b77Al2<\/span>O3<\/span> gate insulator<\/em>\u201d, The 70th<\/span> JSAP Fall Meeting, 8a-H-2, Toyama (2009\/9\/8~11).<\/h4>\n<\/li>\n
                123. \n

                  Ohta, Y. Masuoka, R. Asahi, K. Nomura<\/u><\/strong>, and H. Hosono, \u201c<\/strong>Visualization of channel in SrTiO3based field effect transistor by thermoelectric measurement\u201d<\/em>, The 70th<\/span> JSAP Fall Meeting, 8a-H-3, Toyama (2009\/9\/8~11).<\/h4>\n<\/li>\n
                124. \n

                  Y Kikuchi, Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, and H. Hosono, \u201cImprovement of TFT characteristics of a-In-Ga-Zn-O TFT by low temperature thermal annealing<\/em>\u201d, The 70th<\/span> JSAP Fall Meeting, 11p-J-4, Toyama (2009\/9\/8~11).<\/h4>\n<\/li>\n
                125. \n

                  H. Lee, K. Kawamura, K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cCharacterization of amorphous oxide semiconductor a-In-Ga-Zn-O by steady-state photoconductivity measurement\u201d<\/em>, The 70th<\/span> JSAP Fall Meeting, 11p-J-2, Toyama (2009\/9\/8~11).<\/h4>\n<\/li>\n
                126. \n

                  Maeda, K Shimizu, K. Nomura<\/u><\/strong>, M. Hirano, T. Kamiya, and H. Hosono, \u201cCharacterization of Tail state in amorphous oxide semiconductor a-In-Ga-Zn-O film by CPM method (4)\u201d<\/em>, The 70th<\/span> JSAP Fall Meeting, 11p-J-1, Toyama (2009\/9\/8~11).<\/h4>\n<\/li>\n
                127. \n

                  Kumada, K. Matsuzaki, K. Nomura<\/u><\/strong>, H. Hosono, and T. Suzaki, \u201cEffect of polarized layered structure for polar- MgO(111) film<\/em>\u201d, The 70th<\/span> JSAP Fall Meeting, 8p-H-6, Toyama\uff082009\/9\/8~11\uff09.<\/h4>\n<\/li>\n
                128. \n

                  Shimizu, S. Maeda, K. Nomura<\/u><\/strong>, M. Hirano, T. Kamiya, and H. Hosono, \u201cCharacterization of Tail state in amorphous oxide semiconductor a-In-Ga-Zn-O film by CPM method (3)<\/em>\u201d, The 56th<\/span> JSAP Spring Meeting, Tsukuba (2009\/3\/30-4\/2).<\/h4>\n<\/li>\n<\/ol>\n<\/div>\n
                   <\/div><\/div>\n\t\t\t\t\t\t\t\t\t
                  2004<\/div>\n\t\t\t\t\t

                  Invited talks<\/strong><\/h2>\n
                    \n
                  1. \n

                    Ohta, K. Nomura<\/u><\/strong>, K. Ueda, M. Orita, M. Hirano, H. Hosono, \u201cSingle crystal films of In2<\/span>O3<\/span>(ZnO)m<\/span> (m=integer) natural super lattice grown by novel solid-state diffusion technique<\/em>\u201d, The International Conference On Metallurgical Coatings And Thin Films (ICMCTF 2002), San Diego, California, USA (2002).<\/h4>\n<\/li>\n
                  2. \n

                    Ohta, H. Hiramatsu, M. Orita, M. Hirano, K. Nomura<\/u><\/strong>, K. Ueda, H. Hosono, T. Suzuki, Y. Ikuhara, \u201cReactive Solid-Phase Epitaxy – A magical way to fabricate single-crystalline thin films of complex oxides with superlattice structure ?<\/em>\u201d, 2002 MRS Fall Meeting, Boston, USA, (2002).<\/h4>\n<\/li>\n
                  3. \n

                    Ohta, K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara and H. Hosono, \u201cSingle-crystalline film growth techniques of transparent oxide semiconduc<\/em>tors\u201d, 5th<\/span> International Meeting of the Pacific Ceramic Societies (PacRim 5), Nagoya, JAPAN (2003).<\/h4>\n<\/li>\n
                  4. \n

                    Ohta, K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Kamiya, M. Hirano and H. Hosono, \u201cEpitaxial Growth and Application of Transparent Oxide Semiconductors<\/em>\u201d, Euro. Ceram. Soc. (2003).<\/h4>\n<\/li>\n
                  5. \n

                    Nomura<\/u><\/strong>, H. Ohta, H. Hiramatsu, T. Kamiya, M. Hirano, and H. Hosono, \u201dReactive solid phase epitaxy for growing high-quality thin films of transparent oxide semiconductors\u201d, <\/em>The 4th<\/span> International Conference on Solid-State Crystal & the 7th Polish conference on Crystal Growth (ICSSC), Zakopane, Poland (2004).<\/h4>\n<\/li>\n<\/ol>\n

                     <\/h4>\n
                    \n

                    Presentations<\/strong><\/h2>\n
                      \n
                    1. \n

                      Nomura<\/u><\/strong>, Y. Ishikawa, and N. Shibata, \u201cCrystallinity of AlN film deposited by reactive sputtering method<\/em>\u201d, The Ceramic Society of Japan, Aichi (1994).<\/h4>\n<\/li>\n
                    2. \n

                      Nomura<\/u><\/strong>, S. Kawai, and N. Shibata, \u201cAnalysis of reaction at Au\/Si3<\/span>N4<\/span> interface by XPS-SIMS<\/em>\u201d, The Ceramic Society of Japan, Aichi (1995).<\/h4>\n<\/li>\n
                    3. \n

                      Nomura<\/u><\/strong>, Y. Takeda, and N. Shibata, \u201cIn-situ observation of crystallization of ferroelectric thin film by micro-Raman spectroscopy<\/em>\u201d, The 46th<\/span> JSAP Spring Meeting, Chiba (1999\/3\/28).<\/h4>\n<\/li>\n
                    4. \n

                      Nomura<\/u><\/strong>, T. Inada, F. Yamada, H. Hidaka, H. Taguchi, M. Kato, and Y. Ando, \u201cCO2<\/span>-N2<\/span>, CO2<\/span>-O2<\/span> mixed gas separation property of zeolite film<\/em>\u201d, The 18th<\/span> Annual meeting of The Membrane Society of Japan, A2-1-2, Tokyo (1996\/5\/16-17).<\/h4>\n<\/li>\n
                    5. \n

                      Nomura<\/u><\/strong>, M. Kitano, S. Ikeda, N. Shibata, and M. Maeda, \u201cFabrication of ZnO thin film by pulsed current electrolysis<\/em>\u201d, The 68th<\/span> Annual Meeting of The Electrochemical Society, Kobe (2001\/4\/1-4\/3).<\/h4>\n<\/li>\n
                    6. \n

                      Nomura<\/u><\/strong>, S. Ikeda, N. Shibata, and M. Maeda, \u201cFabrication of ferroelectric thin film by electro chemical method<\/em>\u201d, The 67th<\/span> Annual Meeting of The Electrochemical Society, Nagoya (2001\/4\/4-6).<\/h4>\n<\/li>\n
                    7. \n

                      Nomura<\/u><\/strong>, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono, \u201cNovel film growth technique of single crystalline In2<\/span>O3<\/span>(ZnO)m<\/span> (m = integer) homologous compound<\/em>\u201d, 2nd International Symposium on Transparent Oxide Thin Films for Electronics and Optics, (TOEO-2), Tokyo, Japan (2001\/11\/8-9).<\/h4>\n<\/li>\n
                    8. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Ueda, M. Orita, M. Hirano, and H. Hosono, \u201cFilm growth mechanism of natural supper lattice InGaO3<\/span>(ZnO)5<\/span> (m=integer) single crystalline thin film<\/em>\u201d, The 49th<\/span> JSAP Spring Meeting, Tokyo (2002\/3\/27-30).<\/h4>\n<\/li>\n
                    9. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of transparent MISFET using InGaO3<\/span>(ZnO)5 <\/span>single crystalline thin film<\/em>\u201d, The 63th<\/span> JSAP Fall Meeting, Tokyo (2002).<\/h4>\n<\/li>\n
                    10. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Ueda, M. Orita M. Hirano, and H. Hosono, \u201cFabrication of single crystalline thin film of natural supper lattice InMO3<\/span>(ZnO)m<\/span> (M=In, Ga, m=integer) (I)<\/em>\u201d, The 49th<\/span> JSAP Spring Meeting, Tokyo (2002\/3\/27-30).<\/h4>\n<\/li>\n
                    11. \n

                      Ohta, K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, and H. Hosono, \u201cFabrication of single crystalline film of natural supper lattice InGaO3<\/span>(ZnO)m<\/span> by instant solid phase epitaxy (I)<\/em>\u201d, The 15th<\/span> Fall meeting of The Ceramic Society of Japan, Akita (2002\/9\/22-24) .<\/h4>\n<\/li>\n
                    12. \n

                      Ohta, K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, and H. Hosono, \u201cFabrication of single crystalline film of natural supper lattice InGaO3<\/span>(ZnO)m<\/span> by instant solid phase epitaxy (II)<\/em>\u201d, The 15th<\/span> Fall meeting of The Ceramic Society of Japan, Akita (2002\/9\/22-24) .<\/h4>\n<\/li>\n
                    13. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of transparent MISFET using InGaO3<\/span>(ZnO)5<\/span> single crystalline thin film with normally insulating nature<\/em>\u201d, Mater. Res. Soc. Symp. Fall Meeting (2002 MRS), Boston, USA, (2002\/12\/2-6).<\/h4>\n<\/li>\n
                    14. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport for InGaO3<\/span>(ZnO)m<\/span>(m=integer) single crystalline films<\/em>\u201d, The 64th<\/span> JSAP Fall Meeting, Tokyo (2003).<\/h4>\n<\/li>\n
                    15. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cTransparent MISFET devices using InGaO3<\/span>(ZnO)m<\/span> (m=integer) single-Crystalline Thin Films and their carrier transport properties<\/em>\u201d, 3rd International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-3) Tokyo, Japan (2003\/4\/10-11).<\/h4>\n<\/li>\n
                    16. \n

                      Ohta, K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara, and H. Hosono, \u201cSingle-crystalline film growth techniques of transparent oxide semiconductors<\/em>\u201d Pacific Rim Conference on Ceramic and Glass Technology (PacRim) (2003).<\/h4>\n<\/li>\n
                    17. \n

                      Takeda, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono,\u3000\u201cZnO thin films epitaxially grown on three-dimensionally lattice-matched substrate: application of InGaO3<\/span>(ZnO)6<\/span> single-crystalline layers<\/em>\u201d,11th International Workshop on Oxide Electronics (WOE11), P02-01, Hakone, Japan (2004\/10\/3-5).<\/h4>\n<\/li>\n
                    18. \n

                      Takagi, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4<\/span><\/em>\u201d, 11th International Workshop on Oxide Electronics (WOE11), P02-05, Hakone, Japan (2004\/10\/3-5).<\/h4>\n<\/li>\n
                    19. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport of extended and localized states in disordered single-crystalline semiconductor InGaO3<\/span>(ZnO)5<\/span> thin film<\/em>\u201d, Mater. Res. Soc. Symp. Spring Meeting (2004 MRS) San Francisco, USA, (2004\/4\/12-16).<\/h4>\n<\/li>\n
                    20. \n

                      Nomura<\/u><\/strong>, H. Ohta, A. Takagi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cAmorphous Oxide Semiconductor Exhibiting Large Hall Mobility (> 10 cm2<\/span>\/Vs-1<\/span>): Electronic Structure, Carrier Transport and Device Applications of a-InGaZnO4<\/span><\/em>\u201d, Mater. Res. Soc. Symp. Fall Meeting, (2004 MRS) Boston, USA, (2004\/11\/29-12\/3).<\/h4>\n<\/li>\n
                    21. \n

                      Nomura<\/u><\/strong>, H. Ohta, Kazushige Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cAll oxide transparent MISFET using high-k dielectrics gates Insulating Films on Semiconductors<\/em>\u201d, 13th Bi-annual Conference Insulating on Silicon (INFOS2003), Barcelona, Spain (2003\/6\/18-20).<\/h4>\n<\/li>\n
                    22. \n

                      Kamiya, H. Ohta, H. Hiramatsu, K. Hayashi, K. Nomura<\/u><\/strong>, S. Matsuishi, K. Ueda, M. Hirano, and H. Hosono, \u201cNatural nanostructures in ionic semiconductors<\/em>\u201d, Micro and Nano Engineering (MNE 2003), Cambridge, UK (2003\/11\/22-25).<\/h4>\n<\/li>\n
                    23. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Matsuzaki, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport of transparent oxide semiconductor InGaO3<\/span>(ZnO)5<\/span> single crystalline thin film and filed effect transistor<\/em>\u201d, Thin Film Materials & Devices Meeting, Nara (2004\/11\/12\uff09<\/h4>\n<\/li>\n
                    24. \n

                      Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport for transparent oxide semiconductor InGaO3<\/span>(ZnO)<\/em>\uff4d<\/span><\/em>(m=integer) single crystalline thin film<\/em>\u201d, 2004 Annual meeting of The Ceramic Society of Japan, Kanagawa (2004\/3\/22-24).<\/h4>\n<\/li>\n
                    25. \n

                      Takeda, K. Nomura<\/u><\/strong>, H. Ohta, Y. Ogo, H. Yanagi<\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cEpitaxial film growth of Zinc oxide and improvement of surface roughness at low temperature<\/em>\u201d, Thin Film Materials & Devices Meeting, B-9, Nara (2004\/11\/12-13\uff09<\/h4>\n<\/li>\n
                    26. \n

                      Kamiya, K. Nomura<\/u><\/strong>, A. Takagi, H. Ohta, H. Yanagi, M. Hirano, and H. Hosono, \u201cRoom temperature deposition and carrier transport of amorphous oxide semiconductor I<\/em>nGaZnO4<\/span> having mobility (>10cm2<\/span>\/Vs)<\/em>\u201d, The 65th<\/span> JSAP Fall Meeting, Miyagi (2004\/9\/1-4).<\/h4>\n<\/li>\n
                    27. \n

                      Takeda, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cLow temperature film growth of ZnO films with atomically flat surface on <\/em>RMO3<\/span>(ZnO)m<\/span><\/em> (<\/em>R=In, Lu; M=Ga; m=integer<\/em>) <\/em>single crystalline buffer layer<\/em>\u201d, 2004 Annual meeting of The Ceramic Society of Japan, Kanagwa (2004\/3\/22-24) .<\/h4>\n<\/li>\n
                    28. \n

                      Takagi, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport and electronic structure for amorphous oxide semiconductor<\/em> InGaZnO4<\/span><\/em>\u201d, 2004 Annual meeting of The Ceramic Society of Japan, Kanagawa (2004\/3\/22-24).<\/h4>\n<\/li>\n
                    29. \n

                      Kamiya, H. Ohta, K. Nomura<\/u><\/strong>, M. Hirano, H. Yanagi, and H. Hosono, \u201cTransparent oxide semiconductor device: from TCO to TOS<\/em>\u201d, 2004 Annual meeting of The Ceramic Society of Japan, Kanagawa (2004\/3\/22-24).<\/h4>\n<\/li>\n
                    30. \n

                      Takagi, K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport for amorphous oxide semiconductor InGaZnO4<\/span> deposited at room temperature<\/em>\u201d, Thin Film Materials & Devices Meeting, Nara (2004\/11\/12-13\uff09<\/h4>\n<\/li>\n
                    31. \n

                      Nomura<\/u><\/strong>, A. Takagi, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport for transparent amorphous oxide semiconductor <\/em>InGaZnO4<\/span><\/em>\u201d, The 51th<\/span> JSAP Spring Meeting, Tokyo (2004\/3\/28-31).<\/h4>\n<\/li>\n
                    32. \n

                      Ohta, S.W. Kim, S.-H Kim, K. Nomura, S. Ohta, K. Komoto, M. Hirano, and H. Hosono, \u201cFabrication of thermoelectric oxide semiconductor Nax<\/span>CoO2<\/span> (x~0.83) thin film by reactive solid phase epitaxy,<\/em> The 51th<\/span> JSAP Spring Meeting, Tokyo (2004\/3\/28-31)<\/h4>\n<\/li>\n<\/ol>\n<\/div><\/div>\n\t\t\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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                      2021- 2020-2015 2014-2010 2009-2005 2004 2021- Invited talks K. Nomura, \u201cBack-channel surface defect for p-channel oxide TFTs\u201d, 2021 the SID International Symposium, USA (2021). K. Nomura, \u201cp-type oxide TFT development toward oxide CMOS technology\u201d, 2021 International Conference on Display Technology, China (2021).“,\u00a0 K. Nomura, \u201cHow to improve P-channel Oxide-TFT s“,\u00a0The 6th International Conference on Advanced […]<\/p>\n","protected":false},"author":2,"featured_media":650,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-101","page","type-page","status-publish","has-post-thumbnail","hentry"],"_links":{"self":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/101","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=101"}],"version-history":[{"count":41,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/101\/revisions"}],"predecessor-version":[{"id":990,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/101\/revisions\/990"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/media\/650"}],"wp:attachment":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=101"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}