{"id":103,"date":"2020-01-30T08:22:24","date_gmt":"2020-01-30T08:22:24","guid":{"rendered":"http:\/\/team.ucsd.edu\/?page_id=103"},"modified":"2023-04-22T00:17:55","modified_gmt":"2023-04-22T00:17:55","slug":"books","status":"publish","type":"page","link":"https:\/\/team.ucsd.edu\/?page_id=103","title":{"rendered":"BOOKS"},"content":{"rendered":"\t\t
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BOOKS<\/h2>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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  1. T. Kamiya, K. Nomura, and H. Hosono \u201cTransparent oxide semiconductor: From material design to device application\u201d in H. Yanagida et al. (Eds.), Ceramic database 2004 (32), Techno-plaza, pp.158-161 (2004). (Japanese)<\/h4><\/li>

  2. T. Kamiya, K. Nomura, and H. Hosono, \u201cHigh performance thin film transistor using transparent oxide semiconductor\u201d in Electronic paper jitsuyouka saizensen, NTS Inc., pp.267-280 (2005). (Japanese)<\/h4><\/li>

  3. K. Nomura, H. Ohta, T. Kamiya, and H. Hosono \u201cSingle-crystalline thin film growth of transparent oxide semiconductor with natural superlattice structure and transparent oxide semiconductor\u201d in Japan Metal Society (Ed.), Practical microscopy techniques for materials development, Japan Metal Society \/ Maruzen Co., Ltd., pp.222 (2006).\u00a0<\/h4><\/li>

  4. K. Nomura, \u201cFlexible electronics and amorphous semiconductor\u201d in H. Hosono & M. Hirano (Eds.), Transparent oxides as active electronic materials and their applications, CMC Publishing Co., Ltd., pp.102-111 (2006).\u00a0<\/h4><\/li>

  5. K. Nomura, \u201cOxide semiconductor based field-effect transistor\u201d in H. Hosono & M. Hirano (Eds.), Transparent oxides as active electronic materials and their applications, CMC Publishing Co., Ltd., pp.63-67 (2006).\u00a0<\/h4><\/li>

  6. T. Kamiya, K. Nomura, and H. Hosono, \u201cOxide based transistor\u201d in Y. Uraoka (Ed.), Low temperature poly-Silicon thin film transistor for system on panel, CMC Publishing Co., Ltd., pp.243-264 (2007).\u00a0<\/h4><\/li>
  7. K. Nomura, \u201c Chapter 5 Transparent amorphous oxide semiconductor a-In-Ga-Zn-O and the TFT applications\u201d in H. Hosono & M. Hirano (Eds.), Oxide semiconductors and iron-based superconductors -novel materials functionalities and emerging applications-, CMC Publishing Co., Ltd.,\u00a0 (2010). (Japanese).<\/li>

  8. K. Nomura, T. Kamiya and H. Hosono, \u201cDevelopment of n-type-a-In-Ga-Zn-O\/P-type c-Si hetrojunction solar cell\u201d in High efficiency solar cells, Sokoshay Printing Ltd. 306-318, (2012).\u00a0<\/h4><\/li>

  9. T. Kamiya, K. Nomura, and H. Hosono, \u201cChapter 1 Amorphous oxide semiconductor\u201d in Transparent conductive film Various process technology, practical use and commercialization of leading ability and material, Johokikou, pp17-36 (2012).\u00a0<\/h4><\/li>

  10. T. Kamiya, K. Nomura, K. Ide, J. Kim, H. Hiramatsu, H. Kumomi, and H. Hosono, \u201cAmorphous Oxide Semiconductor Thin-Film Transistors\u201d, in Novel Structured Metallic and Inorganic Materials, Chapter 38, Y Setsuhara et Eds., Springer Singapore (2019).<\/h4><\/li>

  11. K.Ide, T. Katase, K. Nomura, H. Kumomi, H. Hosono and T. Kamiya, \u201cAmorphous oxide semiconductor In-Ga-Zn-O\u201d, 4-2-7 in Handbook of thin film Fabrication, NTS, Tokyo (2019).\u00a0<\/h4><\/li>
  12. T. Kamiya, K. Nomura, K. Ide, and H Hosono, “Chapter 4 Defects and Relevant Properties”, in Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, Wiley (2022).<\/li>
  13. K. Nomura, “Chapter 24 Toward the Development of High-Performance p -Channel Oxide-TFTs and All-Oxide Complementary Circuits”, in Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, Wiley (2022)<\/li><\/ol><\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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    1. Kamiya, H. Ohta, H. Hiramatsu, H. Kamioka, and K. Nomura<\/u><\/strong>, \u201cTransparent oxide semiconductor and device application<\/em>\u201d, Optronics 247<\/strong>, pp.128-139 (2004). (Japanese)<\/h4><\/li>

    2. Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cAmorphous oxide semiconductor exhibiting high mobility (>10cm2<\/sup>(Vs)-1<\/sup>) and room temperature fabrication of thin film transistor\u201d, <\/em>The text of 31th Amorphous seminar, pp.1-6 (2004). (Japanese)<\/h4><\/li>

    3. Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cTransparent filed-effect transistors fabricated using transparent oxide semiconductors <\/em>\u201c, Material stage 3, <\/strong>pp.85-92 (2005). (Japanese)<\/h4><\/li>

    4. Nomura<\/u><\/strong>, <\/strong>H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, \u201cTransparent filed-effect transistor using transparent oxide semiconductor<\/em>\u201d, Materials Integration 18, <\/strong>pp.3-9 (2005). (Japanese)<\/h4><\/li>

    5. Nomura<\/u><\/strong>, <\/strong>\u201cTransparent electronic device using transparent oxide semiconductor<\/em>\u201d, Function and Materials 4, <\/strong>pp.30-39 (2005). (Japanese)<\/h4><\/li>

    6. Hosono, K. Nomura<\/u>, <\/strong>and T. Kamiya, \u201cTransparent flexible transistor using amorphous oxide semiconductor<\/em>\u201d, OYO Buturi 74<\/strong>, pp.910-916 (2005). (Japanese)<\/h4><\/li>

    7. Nomura<\/u><\/strong>, <\/strong>T. Kamiya, and H. Hosono, \u201cMaterial exploration of amorphous oxide semiconductor toward high-performance flexible TFT and the performance of TFTs<\/em>\u201d, Seikei-Kakou 17<\/strong>, pp.588-592 (2005). (Japanese)<\/h4><\/li>

    8. Nomura<\/u><\/strong>, <\/strong>T. Kamiya, and H. Hosono, \u201cMaterial exploration of amorphous oxide semiconductor for high-performance flexible TFT and the performance of the TFT<\/em>\u201d, The text of 32th Amorphous seminar, pp.17-22 (2005). (Japanese)<\/h4><\/li>

    9. Ohta, K. Nomura<\/u>, <\/strong>H. Hiramatsu, M. Hirano, and H. Hosono, \u201cReactive solid-phase epitaxy<\/em>\u201d, Rigaku Journal 37, <\/strong>pp.3-10 (2006). (Japanese)<\/h4><\/li>

    10. Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cWhy is the amorphous oxide semiconductors paid to attention for a flexible device<\/em>\u201d, Materials Integration 20, <\/strong>40-46 (2007). (Japanese)<\/h4><\/li>

    11. Nomura<\/u><\/strong>, <\/strong>T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, \u201cApplication of oxide semiconductor to thin film transistor\u201d, <\/em>Function and Materials 28, <\/strong>pp.42-53 (2008). (Japanese)<\/h4><\/li>

    12. Nomura<\/u><\/strong>, <\/strong>and H. Hosono, \u201cTransparent circuit<\/em>\u201d, ITE Journal 63, <\/strong>pp.66-68 (2009). (Japanese)<\/h4><\/li>

    13. Kamiya, K. Nomura<\/u><\/strong>, and H. Hosono, \u201cEngineering application of solid state physics: Carrier transport properties and electronic structures of amorphous oxide semiconductors: the present status<\/em>\u201d, Kotai butsuri 523<\/strong>, pp.621-633 (2009). (Japanese)<\/h4><\/li>

    14. Nomura<\/u><\/strong>, and H. Hosono, \u201cTransparent electronic circuit<\/em>\u201d, Image lab 1, <\/strong>pp.32-35 (2010). (Japanese)<\/h4><\/li>

    15. Hosono, and K. Nomura<\/u><\/strong>, \u201cRecent advancement and future prospective for oxide based TFTs<\/em>\u201d, Monthly Display 17<\/strong>, pp.4-8 (2011). (Japanese)<\/h4><\/li>

    16. Nomura<\/u><\/strong>, <\/strong>K. Lee, T. Kamiya, and H. Hosono, \u201cElectronic structure of oxide semiconductor and application to solar cell<\/em>\u201d, The text of 3th solar cell seminar, (2011). (Japanese)<\/h4><\/li>

    17. Nomura<\/u><\/strong>, <\/strong>and H. Hosono, \u201cFunctional oxide semiconductor thin film and the electronic applications<\/em>\u201d, Journal of Materials Science and Engineering 49<\/strong>, 204-208, (2012). (Japanese)<\/h4><\/li>

    18. Nomura<\/u><\/strong>, \u201c<\/strong>Research activity in US\u201d, <\/em>Oyo butsuri,88<\/strong> (2019). (Japanese)\u00a0<\/h4><\/li><\/ol><\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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      BOOKS T. Kamiya, K. Nomura, and H. Hosono \u201cTransparent oxide semiconductor: From material design to device application\u201d in H. Yanagida et al. (Eds.), Ceramic database 2004 (32), Techno-plaza, pp.158-161 (2004). (Japanese) T. Kamiya, K. Nomura, and H. Hosono, \u201cHigh performance thin film transistor using transparent oxide semiconductor\u201d in Electronic paper jitsuyouka saizensen, NTS Inc., pp.267-280 […]<\/p>\n","protected":false},"author":2,"featured_media":97,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-103","page","type-page","status-publish","has-post-thumbnail","hentry"],"_links":{"self":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/103","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=103"}],"version-history":[{"count":12,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/103\/revisions"}],"predecessor-version":[{"id":815,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/103\/revisions\/815"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/media\/97"}],"wp:attachment":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=103"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}