{"id":105,"date":"2020-01-30T08:22:42","date_gmt":"2020-01-30T08:22:42","guid":{"rendered":"http:\/\/team.ucsd.edu\/?page_id=105"},"modified":"2020-04-16T23:13:04","modified_gmt":"2020-04-16T23:13:04","slug":"patent","status":"publish","type":"page","link":"https:\/\/team.ucsd.edu\/?page_id=105","title":{"rendered":"PATENTS"},"content":{"rendered":"\t\t
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    \n\t <\/ul>\n <\/div>\n <\/section>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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     [US]<\/strong><\/h3>\n

    Granted<\/strong><\/h3>\n
      \n
    1. \n

      Saito, H. Hosono, T. Kamiya, K. Nomura, \u201cSensor and image pickup devic<\/em>e\u201d, US7453065, 2008-11-18<\/h4>\n<\/li>\n
    2. \n

      Saito, H. Hosono, T. Kamiya, K. Nomura, \u201cSensor and image pickup device<\/em>\u201d, US7535010, 2009-05-19.<\/h4>\n<\/li>\n
    3. \n

      Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator<\/em>\u201d, US7601984, 2009-10-13.<\/h4>\n<\/li>\n
    4. \n

      Saito, H. Hosono, T. Kamiya, K. Nomura, \u201cSensor and image pickup device<\/em>\u201d, US7663116, 2010-02-16.<\/h4>\n<\/li>\n
    5. \n

      Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor manufacturing method<\/em>\u201d, US7829444, 2010-11-09.<\/h4>\n<\/li>\n
    6. \n

      Kumomi, H. Hosono, T. Kamiya, K. Nomura, \u201cDisplay<\/em>\u201d, US7791072, 2010-09-07.<\/h4>\n<\/li>\n
    7. \n

      Abe, H. Hosno, T. Kamiya, K. Nomura, \u201cIntegrated circuits utilizing amorphous oxides<\/em>\u201d, US7863611, 2011-01-04<\/h4>\n<\/li>\n
    8. \n

      Saito, H. Hosono, T. Kamiya, K. Nomura, \u201cSensor and image pickup device<\/em>\u201d, US8084743, 2011-12-27.<\/h4>\n<\/li>\n
    9. \n

      Abe, H. Hosono, T. Kamiya, K. Nomura, \u201cIntegrated circuits utilizing amorphous oxides<\/em>,\u201d US8203146, 2012-06-19<\/h4>\n<\/li>\n
    10. \n

      Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor<\/em>\u201d, US8168974B2, 2012-05-01.<\/h4>\n<\/li>\n
    11. \n

      Den, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, \u201cLight-emitting device<\/em>\u201d, US8212252B2, 2012-07-03.<\/h4>\n<\/li>\n
    12. \n

      H. Hong, K. Nomura, J.-H. Lan, \u201cMethod and apparatus for light induced etching of glass substrates in the fabrication of electronic circuits\u201d, US9090499, 2013.3.10,<\/h4>\n<\/li>\n
    13. \n

      H. Hong, T.-C. Fung, C. Kim, K. Nomura, \u201cLaser annealing technique for metal oxide TFT\u201d, US 9431244, 2014.9.24.<\/h4>\n<\/li>\n
    14. \n

      Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, \u201cAmorphous\u2002Oxide\u2002and Thin\u2002Film Transistor<\/em>\u201d, US9269826, 2016-02-23<\/h4>\n<\/li>\n
    15. \n

      Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, \u201cAmorphous oxide and field effect transistor<\/em>\u201d, US9583637B2, 2017-02-28.<\/h4>\n<\/li>\n
    16. \n

      Nomura, \u201cTin based p-type oxide semiconductor and thin film transistor application<\/em>\u201d, US9647135B2, 2017\/05\/9<\/h4>\n<\/li>\n
    17. \n

      Nomura, J. Hong, \u201cAtomic layer deposition of P-type oxide semiconductor thin films\u201d, US9685542B2, 2017\/6\/20<\/h4>\n<\/li>\n
    18. \n

      Nomura, J. Hong, \u201cTunnel thin film transistor with hetero-junction structure\u201d, US20160247927A1, 2017\/9\/12<\/h4>\n<\/li>\n
    19. \n

      Nomura, \u201cHydrogenated p-channel metal oxide semiconductor thin film transistors<\/em>\u201d, US9985139B2, 2018\/05\/28.<\/h4>\n<\/li>\n
    20. \n

      Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, \u201cSwithing\u2002Element<\/em>\u201d, US20120012838A1, 2018-07-24.<\/h4>\n<\/li>\n
    21. \n

      Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, \u201cAmorphous\u2002Oxide\u2002and Thin\u2002Film transistor<\/em>\u201d, US9947803, 2018-04-17.<\/h4>\n<\/li>\n<\/ol>\n


      <\/strong><\/h4>\n

       [JP]<\/strong><\/h3>\n

      Granted<\/strong><\/h3>\n
        \n
      1. \n

        Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, \u201cAmorphous oxide and thin film transistor<\/em>\u201d, JP4620046, 2011-01-26.<\/h4>\n<\/li>\n
      2. \n

        Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, \u201cVapor\u2002fabrication\u2002Method\u2002of\u2002Amorphous\u2002Oxide\u2002Thin\u2002Film<\/em>\u201d, JP4568827, 2010-10-27.<\/h4>\n<\/li>\n
      3. \n

        Hosono, M. Hirano, H. Ohta, T. Kamiya, K. Nomura, \u201cAmorphous\u2002Oxide\u2002Thin\u2002Film<\/em>\u201d, JP4568828, 2010-10-27.<\/h4>\n<\/li>\n
      4. \n

        Kumomi, H. Hosono, T. Kamiya, K. Nomura, \u201cmage display device<\/em>\u201d, JP5126729, 2013-01-23.<\/h4>\n<\/li>\n
      5. \n

        Den, H. Hosono, T. Kamiya, K. Nomura, \u201cLight-emitting device<\/em>\u201d, JP5118811, 2013-01-16.<\/h4>\n<\/li>\n
      6. \n

        Abe, H. Hosono, T. Kamiya, K. Nomura, \u201cSemiconductor device utilizing amorphous oxides<\/em>\u201d, JP5053537, 2012-10-17.<\/h4>\n<\/li>\n
      7. \n

        Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor manufacturing method<\/em>\u201d, JP5126730, 2013-01-23.<\/h4>\n<\/li>\n
      8. \n

        Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, \u201cAmorphous oxide and field-effect transistor<\/em>\u201d, JP5138163, 2013-02-06.<\/h4>\n<\/li>\n
      9. \n

        Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor manufacturing method<\/em>\u201d, JP5126730, 2013-01-23.<\/h4>\n<\/li>\n
      10. \n

        Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, \u201cField-effect transistor<\/em>\u201d, JP5118812, 2013-01-16.<\/h4>\n<\/li>\n
      11. \n

        Nagata, H. Hosono, T. Kamiya, K. Nomura, \u201cField-effect transistor<\/em>\u201d, JP5118810, 2013-01-16.<\/h4>\n<\/li>\n
      12. \n

        Hosono, T. Kamiya, M. Hirano, Y. Ogo, K. Nomura, H. Hiramatsu, \u201cP-channel thin film transistor manufacturing method<\/em>\u201d, JP5168605, 2013-03-21<\/h4>\n<\/li>\n
      13. \n

        Nomura, H. Hosono, T. Kamiya, M. Hirano, \u201cThin film transistor manufacturing method<\/em>\u201d, JP5168599, 2013\/1\/11, 2010-081588.<\/h4>\n<\/li>\n
      14. \n

        Hosono, T. Kamiya, M. Hirano, Y. Ogo, H. Hiramatsu, K. Nomura, \u201cN-type semiconductor thin film, pn homojunction thin film solar and n-type semiconductor thin film and pn homojunction device manufacturing method<\/em>\u201d, JP2011119547A, 2013-12-04.<\/h4>\n<\/li>\n
      15. \n

        Nakagawa, M. Sano, H. Hosono, T. Kamiya, K. Nomura, \u201cAmorphous oxide and field-effect transistor<\/em>\u201d, JP2012248853A, 2014-09-10.<\/h4>\n<\/li>\n
      16. \n

        Hosono, T. Kamiya, K. Nomura, \u201cAmbipolar field effect transistor and the manufacturing<\/em>\u201d, JP2012182329A, 2015-06-17.<\/h4>\n<\/li>\n
      17. \n

        Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor manufacturing method<\/em>\u201d, JP2012164987A, 2014-01-29.<\/h4>\n<\/li>\n
      18. \n

        Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor manufacturing method<\/em>\u201d, JP2012164986A, 2014-01-29.<\/h4>\n<\/li>\n
      19. \n

        Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, \u201cMethod of manufacturing Field effect transistor manufacturing method<\/em>\u201d, JP2012160740A, 2014-03-26<\/h4>\n<\/li>\n
      20. \n

        Kumomi, H. Hosono, T. Kamiya, K. Nomura,, Image display, JP2012151485A, 2014-01-29.<\/h4>\n<\/li>\n
      21. \n

        Yabuta, M. Sano, T. Iwasaki, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor manufacturing method<\/em>\u201d, Publication number: JP2012-124532, 2014-01-29.<\/h4>\n<\/li>\n
      22. \n

        Nakagawa, M. Sano, H. Hosono, T. Kamiya, K. Nomura, \u201cAmorphous oxide and field-effect transistor<\/em>\u201d, Publication number: JP2011-249823, 2013-11-06.<\/h4><\/li>\n<\/ol><\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

        \u00a0[US] Granted Saito, H. Hosono, T. Kamiya, K. Nomura, \u201cSensor and image pickup device\u201d, US7453065, 2008-11-18 Saito, H. Hosono, T. Kamiya, K. Nomura, \u201cSensor and image pickup device\u201d, US7535010, 2009-05-19. Sano, K. Nakagawa, H. Hosono, T. Kamiya, K. Nomura, \u201cField effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active […]<\/p>\n","protected":false},"author":2,"featured_media":654,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-105","page","type-page","status-publish","has-post-thumbnail","hentry"],"_links":{"self":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/105","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=105"}],"version-history":[{"count":6,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/105\/revisions"}],"predecessor-version":[{"id":655,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/105\/revisions\/655"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/media\/654"}],"wp:attachment":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=105"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}