{"id":554,"date":"2020-04-15T23:04:59","date_gmt":"2020-04-15T23:04:59","guid":{"rendered":"http:\/\/team.ucsd.edu\/?page_id=554"},"modified":"2020-04-17T03:39:20","modified_gmt":"2020-04-17T03:39:20","slug":"oxide","status":"publish","type":"page","link":"https:\/\/team.ucsd.edu\/?page_id=554","title":{"rendered":"Oxide semiconductor"},"content":{"rendered":"\t\t
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Topic: Semiconductor material development for next generation electronics<\/h1>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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Oxide semiconductor is expected as a material to develop next-generation electronics. We develop new oxide based on our original material design concept. Especially, we aim to develop wide band gap amorphous oxide semiconductor with high carrier mobility for transparent and flexible device applications.
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Topic: Electronic\/defect structure analysis for oxides<\/h1>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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The understanding of material is a key to improve the device performance and to develop further high-performance material. We understand the electronic\/defect structure of functional oxides probed by a variety of material characterization approaches including experimental and computation methods. Our deep understanding of the materials will feedback to develop high-performance devices and new materials.<\/h3>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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\n\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\tOur Research<\/span>\n\t\t<\/span>\n\t\t\t\t\t<\/a>\n\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

Topic: Semiconductor material development for next generation electronics Oxide semiconductor is expected as a material to develop next-generation electronics. We develop new oxide based on our original material design concept. Especially, we aim to develop wide band gap amorphous oxide semiconductor with high carrier mobility for transparent and flexible device applications. Topic: Electronic\/defect structure analysis […]<\/p>\n","protected":false},"author":2,"featured_media":689,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-554","page","type-page","status-publish","has-post-thumbnail","hentry"],"_links":{"self":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/554","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=554"}],"version-history":[{"count":14,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/554\/revisions"}],"predecessor-version":[{"id":679,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/554\/revisions\/679"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/media\/689"}],"wp:attachment":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=554"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}