{"id":80,"date":"2020-01-30T07:30:15","date_gmt":"2020-01-30T07:30:15","guid":{"rendered":"http:\/\/team.ucsd.edu\/?page_id=80"},"modified":"2025-08-14T21:19:10","modified_gmt":"2025-08-14T21:19:10","slug":"publication","status":"publish","type":"page","link":"https:\/\/team.ucsd.edu\/?page_id=80","title":{"rendered":"JOURNAL"},"content":{"rendered":"\t\t
\n\t\t\t
\n\t\t\t\t
\n\t\t\t\t\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t
\n\t\t\t

JOURNAL PAPERS & conference proceedings
<\/h1>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t<\/i>\t\t\t<\/span>\n\t\t\t\t\t\tGoogle scholar<\/span>\n\t\t<\/span>\n\t\t\t\t\t<\/a>\n\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t\t\t\t\t
2021-<\/a><\/div>\n\t\t\t\t\t\t\t\t\t
2020-2015<\/a><\/div>\n\t\t\t\t\t\t\t\t\t
2014-2010<\/a><\/div>\n\t\t\t\t\t\t\t\t\t
2009-2005<\/a><\/div>\n\t\t\t\t\t\t\t\t\t
2004-<\/a><\/div>\n\t\t\t\t\t\t\t<\/div>\n\t\t\t
\n\t\t\t\t\t\t\t\t\t
2021-<\/div>\n\t\t\t\t\t

1.\u00a0\u00a0\u00a0\u00a0<\/span><\/span>\u00a0K. Nomura, “Recent progress of oxide-TFT-based inverter technology”,\u00a0Journal of Information Display (2021)<\/span><\/h4>

2.\u00a0\u00a0<\/span><\/span>Hsuan Chang, Chi-Hsin Huang, and Kenji Nomura, “Low-Temperature Solution-Processed n-Channel SnO2\u00a0Thin-Film
Transistors and High-Gain Zero-VGS-Load Inverter”,\u00a0ACS Appl. Electron.Mater. (2021).<\/span><\/h4>

3.\u00a0 <\/span>Chi-Hsin Huang, Hsuan Chang, Tzu-Yi Yang, Yi-Chung Wang, Yu-Lun Chueh, and KenjiNomura, “Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing”, ACS Appl. Mater.
Interface (2021)<\/h4>

4.\u00a0\u00a0\u00a0<\/span><\/span>Chi-Hsin Huang, Yalun Tang, Tzu-Yi Yang, Yu-Lun Chueh, and Kenji Nomura,” Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter”,\u00a0ACS Appl. Mater. Interface (2021).<\/span><\/h4>

5.\u00a0 <\/span><\/span>Yong Zhang Chi-Hsin Huang, and Kenji Nomura,”<\/span>Voltage Transfer Characteristics of CMOS-Like Inverters for Ambipolar SnO Thin-Film Transistors”,\u00a0IEEE Electro. Dev. lette. 43, 52 (2022).<\/h4>

6.<\/span>\u00a0<\/span>Yalun Tang Chi-Hsin Huang, and Kenji Nomura, “Vacuum-Free Liquid-Metal-Printed 2D Indium\u2013Tin Oxide Thin-Film Transistor for Oxide Inverters <\/span>“,\u00a0ACS Nano. 16, 3280 (2022).<\/h4>

7. Yong Zhang Chi-Hsin Huang, and Kenji Nomura, “Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor<\/span>“, ACS Appl. Mater. Interface 14, 22252 (2022).<\/h4>

8. K. Matsuzaki, N. Tsunoda, Y. Kumagai, Y. Tang, K. Nomura, F. Oba, and H. Hosono, “Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor<\/span>“,\u00a0J. Am. Chem. Soc.<\/i>\u00a0(2022).<\/h4>

9. Y. Zhang C.-Hsin H., and K. Nomura, “<\/span>Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses”, Appl. Phys. Lett. 121, 262105 (2022).<\/h4>

10. S. Arya, Y. Jiang, B. K. Jung, Y. Tang, T. Nga Ng, S. J. Oh, K. Nomura, Y.-H Lo, “Understanding colloidal quantum dot device characteristics with a physical model’, Nano Letters 23 (2023).<\/h4>

11. Y Zhang, CH Huang, K. Nomura, “High-mobility wide bandgap amorphous gallium oxide thin-film transistors for NMOS inverters’, Applied Physics Reviews 11 (1) (2024).<\/h4>

12. M. Wang, H Zhu, K. Nomura, YY Noh, A Liu, Revolutionizing electronics with oxide thin-film transistor technology., Device 2 (5) (2024).<\/h4>

13. WJ Scheideler, K. Nomura, “Advances in Liquid Metal Printed 2D Oxide Electronics”, Advanced Functional Materials, 2403619 (2024).<\/h4>

14. K. Matsuzaki, N. C. W. Chang, T. Nagafuji, N. Tsunoda, Y. Kumagai, K. Nomura, F. Oba, and H. Hosono, “Size-Dependent Isovalent Impurity Doping for Ambipolar Control in Cu3N<\/span>“,\u00a0J. Am. Chem. Soc. 146, 24630-24637<\/i>\u00a0(2024).<\/h4>

15. L. Zhang, C.-H. Huang, R.-. Cyu, Y.-L. Chueh, K. Nomura, “Ultrathin \u03b1-Bi2O3 Thin-Film Transistor for Cost-Effective Oxide-TFT Inverters”, ACS Applied Materials & Interfaces, 16,\u00a0 60548\u201360555 (2024).<\/h4>

16. Y. Zhang, S. Sriram K. Nomura, “Oxide-PMOS Inverter Using p-SnO Thin-film Transistors with Back-channel SnO\/a-GaO p-n Heterojunction Structure”, IEEE Electron Device Letters 46, 294-297 (2024).<\/h4>

17.C.-H. Huang, R.-H. Cyu, Y.-L. Chueh, and\u00a0 K. Nomura, “Low-temperature pressure-assisted liquid-metal printing for \u03b2-Ga2O3 thin-film transistors”, Nature Communications 16, 1882 (2025).<\/h4>

18.Y. Zhang, S. Sriram K. Nomura<\/span>, “Understanding negative-bias-stress-induced instability and hump phenomenon in amorphous In\u2013Ga\u2013Zn\u2013O thin-film transistors: Impact of source\/drain contacts and carrier diffusion”,J. Appl. Phys. 137, 184501 (2025).<\/span><\/h4>
19.<\/span><\/div>
\u00a0<\/span><\/div>
\u00a0<\/div><\/div>
\u00a0<\/div>
\u00a0<\/div><\/div><\/div><\/div><\/div>

Conference proceedings<\/span><\/b><\/h3>

  1. K Nomura, \u201cBack-Channel Defect Termination for p-Channel Oxide-TFTs<\/em>\u201d, SID Symposium Digest of Technical Papers 52, p85-88 (2021).\u00a0<\/h4><\/li>

  2. K Nomura, \u201cRecent progress of oxide-TFT-based inverter technology\u201d, AMFPD proceedings\u00a0 (2022).\u00a0<\/h4><\/li>

  3. K Nomura, \u201cRecent progress of oxide-TFT-based inverter technology\u201d, IMID DIGEST\u00a0 (2022).<\/h4><\/li>

  4. K Nomura, “Current Progress in Oxide Thin-Film Transistor Technology”, IMID DIGEST\u00a0 (2024).<\/h4><\/li>

  5. K Nomura, \u201cRecent advances in oxide-TFT technology for next-generation sustainable electronics. SSDM (2024).<\/h4><\/li><\/ol><\/div>

    \u00a0<\/span><\/b><\/h3><\/div><\/div>\n\t\t\t\t\t\t\t\t\t
    2020-2015<\/div>\n\t\t\t\t\t
      \n
    1. \n

      K. Ide, K. Nomura, H. Hosono, and  T. Kamiya, “Electronic Defects in Amorphous Oxide Semiconductors: A Review<\/i>“, Phys. Status Solidi A 1800372 (2019).<\/h4>\n<\/li>\n
    2. \n

      Z.Xu, Y. Yu, I. A. Niaz, Y. Chen, S. Arya, Y. Lei, M. A. R. Miah, J. Zhou, A. C. Zhang, L. Yan, S. Xu, K. Nomura, and Y.-H. Lo, \u201cDiscovery of Ionic Impact Ionization (I3) in Perovskites Triggered by a Single Photon<\/em>\u201d, arXiv:1906.02475 (2019).<\/h4>\n<\/li>\n
    3. \n

      .Xu, Y. Yu, I. A. Niaz, Y. Chen, S. Arya, Y. Lei, M. A. R. Miah, J. Zhou, A. C. Zhang, L. Yan, S. Xu, K. Nomura, and Y.-H. Lo, “Frequency- and Power-Dependent Photoresponse of a Perovskite Photodetector Down to the Single-Photon Level<\/i>“, Nano Lett.<\/i> 20, 3, 2144-215.(2020)<\/h4>\n<\/li>\n
    4. \n

      C.-H. Huang, K. Matsuzaki, and K. Nomura, “Threshold switching of non-stoichiometric CuO nanowire for selector application<\/i>“, Appl. Phys. Lett. 116, 023503 (2020).<\/h4>\n<\/li>\n
    5. \n

      A. W Lee, D. Le, K. Matsuzaki, and K. Nomura, “Hydrogen Defect Termination in SnO for p-channel-TFTs<\/i>“. ACS Appl. Electron. Mater. 2, 1162-1168 (2020).<\/h4>\n<\/li>\n
    6. \n

       C.-H. Huang, Y. Tang, K. Matsuzaki, and K. Nomura, “<\/span>Resistive switching memory effects in p-type hydrogen-treated CuO nanowire<\/i>“, Appl. Phys. Lett. 117, 023503 (2020).<\/span><\/h4>\n<\/li>\n
    7. \n

      A. W Lee,  Y. Zheng, C.-H. Huang, K. Matsuzaki, and K. Nomura, “Switching mechanism behind the device operation mode in SnO-TFT”, Advanced Electronic Materials 6, 2000742 (2020).<\/h4>\n<\/li>\n
    8. \n

      H. Chang, C.-H. Huang, K. Matsuzaki, and K. Nomura, “Back-channel Defect Termination by Sulfur for p-channel Cu2O Thin-film Transistors”, ACS Applied Materials & Interfaces 46, 51581\u201351588 (2020).<\/h4>\n

      <\/p>\n<\/li>\n<\/ol>\n

      Conference proceedings<\/h2>\n

       <\/h4>\n
        \n
      1. \n

         K. Nomura, \u201cRecent progress of oxide-Semiconductor-based p-channel TFTs<\/em>\u201d, SID Symposium Digest of Technical Papers 46<\/strong>, p591 (2015).<\/h4>\n<\/li>\n
      2. \n

        A. W Lee, K. Matsuzaki, and K. Nomura, “Hydrogenated  SnO for p-channel-TFTs<\/i>“. SID Symposium Digest of Technical Papers. P-2 (2020).<\/h4>\n<\/li>\n<\/ol><\/div>\n\t\t\t\t\t\t\t\t\t
        2014-2010<\/div>\n\t\t\t\t\t

        1. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cInterface and bulk effects for bias-light illumination<\/em>\u00a0instability in amorphous-In-Ga-Zn-O thin-film transistors\u201d<\/em>, J. Soc. Inf. Display\u00a018<\/strong>, 789 (2010).<\/h4><\/li>

        2. Nomura<\/u><\/strong>, T. Aoki, K. Nakamura, T. Kamiya, T. Nakanishi, T. Hasegawa, M. Kimura, T. Kawase, M. Hirano, H. Hosono, \u201dThree-dimensionally stacked flexible integrated circuit: Amorphous<\/em>\u00a0oxide\/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors<\/em>\u201d, Appl. Phys. Lett.\u00a096<\/strong>, 263509 (2010).<\/h4><\/li>

        3. Nomura<\/u><\/strong>, T. Kamiya, Y. Kikuchi, M. Hirano, H. Hosono, \u201cComprehensive studies on the stabilities<\/em>\u00a0of a-In-Ga-Zn-O based thin film transistor by constant current stress<\/em>\u201d, Thin Solid Films\u00a0518<\/strong>, 3012 (2010).<\/h4><\/li>

        4. Ohta, Y. Sato, T. Kato, S.W. Kim,\u00a0K. Nomura<\/u><\/strong>, Y. Ikuhara, and H. Hosono, \u201cField-induced water<\/em>\u00a0electrolysis switches an oxide semiconductor from an insulator to a metal<\/em>“, Nature Comm.\u00a01<\/strong>, 118 (2010).<\/h4><\/li>

        5. Nishio,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cShort-channel nanowire<\/em>\u00a0transistor using a nanoporous crystal semiconductor 12CaO\u00b77Al2<\/span>O3<\/span><\/em>\u201d, Mater. Sci. Eng. B\u00a0173<\/strong>, 37 (2010).<\/h4><\/li>

        6. Yabuta, N. Kaji, Hayashi, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cSputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits<\/em>\u201d, Appl. Phys. Lett.\u00a097<\/strong>, 072111 (2010).<\/h4><\/li>

        7. Kamiya,\u00a0K. Nomura<\/u><\/strong>\u00a0and H. Hosono, \u201cPresent status of amorphous InGaZnO thin-film transistors<\/em>\u201d, Sci. Technol. Adv. Mater.\u00a011<\/strong>, 044305 (2010).<\/h4><\/li>

        8. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cSubgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory<\/em>\u201d, Phys. Stat. Solidi (b)\u00a0207<\/strong>, 1698 (2010).<\/h4><\/li>

        9. Kimura, T. Kamiya, T. Nakanishi,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cIntrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique<\/em>\u201d, Appl. Phys. Lett.\u00a096<\/strong>, 262105 (2010).<\/h4><\/li>

        10. Shinozaki,\u00a0K. Nomura<\/u><\/strong>, T. Katase, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of GaN epitaxial thin film on InGaZnO4<\/span>\u00a0single-crystalline buffer layer<\/em>\u201d, Thin Solid Films\u00a0518<\/strong>, 2996 (2010).<\/h4><\/li>

        11. H. Lee, K. Kawamura,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cSteady state photoconductivity of amorphous In-Ga-Zn-O<\/em>\u201d, Thin Solid Films\u00a0518<\/strong>, 3000 (2010).<\/h4><\/li>

        12. Kikuchi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cDevice characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing<\/em>\u201d, Thin Solid Films\u00a0518<\/strong>, 3017 (2010).<\/h4><\/li>

        13. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cOrigin of definite Hall voltage and positive slope in mobility donor density relation in disordered oxide semiconductors<\/em>\u201d, Appl. Phys. Lett.\u00a096<\/strong>, 122103 (2010).<\/h4><\/li>

        14. Katase,\u00a0K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of atomically flat ScAlMgO4<\/span>\u00a0epitaxial buffer layer and low-temperature growth of high-mobility ZnO films<\/em>\u201d, Cryst Growth Des.\u00a010<\/strong>, 1084 (2010).<\/h4><\/li>

        15. H. Lee, K. Kawamura,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cLarge photoresponse in amorphous In-Ga-Zn-O and origin of reversible and slow decay<\/em>\u201d, Electrochem. Solid-State Lett.\u00a013<\/strong>, 324 (2010).<\/h4><\/li>

        16. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cAmbipolar oxide thin-film transistor<\/em>\u201d, Adv. Mater.\u00a023<\/strong>, 3431 (2011).<\/h4><\/li>

        17. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cHighly stable amorphous In-Ga-Zn-O thin-film transistors<\/em>\u00a0produced by eliminating deep subgap defects<\/em>\u201d, Appl. Phys. Lett.\u00a099<\/strong>, 053505 (2011)<\/h4><\/li>

        18. Nomura<\/u><\/strong>, T. Kamiya, E. Ikenaga, H. Yanagi, K, Kobayashi, and H. Hosono, \u201cDepth analysis of<\/em>\u00a0subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray<\/em>\u00a0photoelectron spectroscopy<\/em>\u201d, J. Appl. Phys.\u00a0109<\/strong>, 073726 (2011).<\/h4><\/li>

        19. Ide, Y. Kikuchi,\u00a0K. Nomura<\/u><\/strong>, M. Kimura, T. Kamiya, and H. Hosono, \u201cEffects of excess oxygen on<\/em>\u00a0operation characteristics of amorphous In-Ga-Zn-O thin-film transistors<\/em>\u201d, Appl. Phys. Lett.\u00a099<\/strong>, 093507 (2011).<\/h4><\/li>

        20. Chen, MY. Wu, R. Ishihara,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, H. Hosono, and CIM Beenakker, \u201cExcimer<\/em>\u00a0laser crystallization of InGaZnO4 on SiO2 substrate<\/em>\u201d, J. Mater. Sci. Mater. Electron.\u00a022<\/strong>, 1694 (2011).<\/h4><\/li>

        21. Chen, MY. Wu, R. Ishihara,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, H. Hosono, and CIM Beenakker, \u201cSolid-phase<\/em>\u00a0epitaxial growth of (111)-oriented Si film on InGaO3(ZnO)5 buffer layer<\/em>\u201d, J. Mater. Sci. Mater. Electron.\u00a022<\/strong>, 920 (2011).<\/h4><\/li>

        22. Lee,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, and H. Hosono, \u201cElectronic Structure and Photovoltaic<\/em>\u00a0Properties of n-Type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunctions<\/em>\u201d, Electrochem. Solid-State Lett.\u00a014<\/strong>, 346 (2011)<\/h4><\/li>

        23. Shao,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOperation characteristics of thin-film transistors<\/em>\u00a0using very thin amorphous In-Ga-Zn-O channels<\/em>\u201d, Electrochem. Solid-State Lett.\u00a014<\/strong>, 197 (2011).<\/h4><\/li>

        24. H. Lee,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cDiffusion-limited a-IGZO \/ Pt schottky junction<\/em>\u00a0fabricated at 200oC on flexible substrate<\/em>\u201d, IEEE Electron Dev. Lett.\u00a032<\/strong>, 1695 (2011).<\/h4><\/li>

        25. Abe, N. Kaji, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and Hideo Hosono, \u201cSimple<\/em>\u00a0analytical model of on operation of amorphous In-Ga-Zn-O thin-film transistors<\/em>\u201d, IEEE Trans. Electron Dev.\u00a058<\/strong>, 3463 (2011).<\/h4><\/li>

        26. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cStability and high-frequency operation of amorphous In\u2013<\/em>\u00a0Ga\u2013Zn\u2013O thin-film transistors with various passivation layers<\/em>\u201d, Thin Solid Films\u00a0520<\/strong>, 3778-3782 (2012).<\/h4><\/li>

        27. Kimura, T. Hasegawa, K. Ide,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cLight irradiation history<\/em>\u00a0sensor using amorphous In-Ga-Zn-O thin-film transistor exposed to ozone annealing<\/em>\u201d, IEEE Electron Dev. Lett.\u00a033<\/strong>, 384 (2012).<\/h4><\/li>

        28. Ohta, T. Mizuno, SJ. Zheng, T. Kato, Y. Ikuhara, K. Abe, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cUnusually Large enhancement of thermopower in an electric field induced two-dimensional electron<\/em>\u00a0gas<\/em>\u201d, Adv. Mater.\u00a024<\/strong>, 740 (2012).<\/h4><\/li>

        29. Abe, K. Takahashi, A. Sato, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and Hideo Hosono, \u201cOperation model with carrier-density dependent mobility for amorphous In\u2013Ga\u2013Zn\u2013O thin-film<\/em>\u00a0transistors\u201d<\/em>, Thin Solid Films\u00a0520<\/strong>, 3791 (2012).<\/h4><\/li>

        30. Lee,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, and H. Hosono, \u201cPhotovoltaic properties of n-type<\/em>\u00a0amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content<\/em>\u201d, Thin Solid Films\u00a0520<\/strong>, 3808 (2012).<\/h4><\/li>

        31. Ide, Y. Kikuchi,\u00a0K. Nomura<\/u><\/strong>, M. Kimura, T. Kamiya, and H. Hosono, \u201cEffects of low-temperature<\/em>\u00a0ozone annealing on operation characteristics of amorphous In\u2013Ga\u2013Zn\u2013O thin-film transistors\u201d<\/em>, Thin Solid Films\u00a0520<\/strong>, 3787 (2012).<\/h4><\/li>

        32. Abe,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOptical evidence for quantization in transparent<\/em>\u00a0amorphous oxide semiconductor superlattice<\/em>\u201d Phys. Rev. B Rapid Communications,\u00a086<\/strong>, 081202 (2012).<\/h4><\/li>

        33. Ide,\u00a0K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Kamiya, and H. Hosono, \u201cStructural relaxation in amorphous<\/em>\u00a0oxide semiconductor<\/em>\u201d, J. Appl. Phys.\u00a0111<\/strong>, 073513 (2012).<\/h4><\/li>

        34. Lee,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, E. Ikenaga, T. Sugiyama, K. Kobayashi, and H. Hosono, \u201cBand alignment of InGaZnO4\/Si interface by hard x-ray photoelectron spectroscopy<\/em>\u201d, J. Appl. Phys. 112, 033713 (2012).<\/h4><\/li>

        35. H. Lee,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya and H. Hosono, \u201cMetal-semiconductor field-effect transistor made<\/em>\u00a0using amorphous In-Ga-Zn-O channel and bottom Pt Schottky contact structure at 200\u00b0C<\/em>\u201d, ECS Solid State Lett.\u00a01<\/strong>, Q8-Q10 (2012).<\/h4><\/li>

        36. Kimura, T. Hasegawa, K. Ide,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cMaximum applied voltage<\/em>\u00a0detector using amorphous In\u2013Ga\u2013Zn\u2013O thin-film transistor exposed to ozone annealing<\/em>\u201d, Solid-State Electronics\u00a075<\/strong>, 74 (2012).<\/h4><\/li>

        37. Abe, K. Takahashi, A. Sato, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, J Kanicki, and H. Hosono, \u201cAmorphous In\u2013Ga\u2013Zn\u2013O Dual-Gate TFTs: Current\u2013voltage characteristics and electrical stress<\/em>\u00a0instabilities<\/em>\u201d, IEEE Trans. Electron Dev.\u00a059\u00a0<\/strong>1928 (2012).<\/h4><\/li>

        38. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cEffects of diffusion of hydrogen and oxygen on electrical<\/em>\u00a0properties of amorphous oxide semiconductor, In-Ga-Zn-O<\/em>\u201d, ECS J. Solid State Sci. Technol.\u00a02<\/strong>, 5 (2013).<\/h4><\/li>

        39. Hanyu, K. Domen,\u00a0K. Nomura<\/u><\/strong>, H. Hiramatsu, H. Kumomi, H. Hosono, and T. Kamiya, \u201cHydrogen<\/em>\u00a0passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors<\/em>\u201d, Appl. Phys. Lett.\u00a0103<\/strong>, 2012114 (2013).<\/h4><\/li>

        40. Watanabe, D.-H. Lee, I. Sakaguchi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, H. Haneda, H. Hosono, and N. Ohashi, \u201cSurface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in<\/em>\u00a0humid atmosphere<\/em>\u201d, Appl. Phys. Lett.\u00a0103<\/strong>, 201904 (2013).<\/h4><\/li>

        41. Hanyu, K. Abe, K. Domen,\u00a0K. Nomura<\/u><\/strong>, H. Hiramatsu, H. Kumomi, H. Hosono, and T. Kamiya, \u201cEffects of high-temperature annealing on operation characteristics of a-In-Ga-Zn-O TFTs<\/em>.\u201d J. Disp. Technol.\u00a010<\/strong>, 979 (2014).<\/h4><\/li>

        42. Yamada,\u00a0K. Nomura<\/u><\/strong>, K. Abe, S. Takeda, and H. Hosono, \u201cExamination of the ambient effects on<\/em>\u00a0the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing<\/em>\u00a0technology<\/em>\u201d Appl. Phys. Lett.\u00a0105<\/strong>, 133503 (2014).<\/h4><\/li>

        43. Miyase, K. Watanabe, I. Sakaguchi, N. Ohashi, K. Domen,\u00a0K. Nomura<\/u><\/strong>, H. Hiramatsu, H. Kumomi, H. Hosono and T. Kamiya, \u201cRoles of hydrogen in amorphous oxide semiconductor In-Ga-Zn-O:<\/em>\u00a0Comparison of conventional and ultra-high-vacuum sputtering<\/em>;\u201d, ECS J. Solid State Sci. Technol.\u00a03<\/strong>, Q3085 (2014).<\/h4><\/li><\/ol>

          \u00a0<\/h2>

          Conference proceedings<\/h2>
          \u00a0<\/div>

          1. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, H. Hosono, \u201cHow we can improve TFT characteristics and stability for a-IGZO-TFTs<\/em>\u201d, Proc. the10th IMID2010, 31-1 (2010).<\/h4><\/li>

          2. Yamada,\u00a0K. Nomura<\/u><\/strong>, S. Takeda, and H. Hosono, \u201cNovel approach for preventing atmosphere effects on Vth stability of a-In-Ga-Zn-O thin film transistor by glass sealing\u201d<\/em>, Proc. IDW’11, p1633 (2011).<\/h4><\/li>

          3. Hosono,\u00a0K. Nomura<\/u><\/strong>, and T. Kamiya, \u201cAn Ambipolar oxide TFT\u201d<\/em>\u00a0SID Symposium Digest of Technical Papers\u00a042<\/strong>, p486 (2011).<\/h4><\/li>

          4. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cBias stability for a-In-Ga-Zn-O-TFTs: Origin of threshold voltage instability and the role of thermal annealing and passivation\u201d<\/em>\u00a0Proc. 18th<\/span>\u00a0International Display Workshops (IDW ’11), p587 (2011).<\/h4><\/li>

          5. Hasegawa, M. Kimura, K. Ide,\u00a0K Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cLight irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor fabricated by high oxygen partial pressure sputtering<\/em>\u201d, Proc. 19th<\/span>\u00a0International Workshop on Active-Matrix Flat Panel Displays and Devices (AM-FPD \u201912), p41 (2012).<\/h4><\/li>

          6. Inoue, T. Hasegawa, T. Nakanishi, M. Kimura,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H Hosono, \u201cCharacteristic shift of a CTFT inverter using n-type IGZO and p-type F8T2 TFTs after temperature and operation stresses<\/em>\u201d Proc. IEEE International Meeting Future of Electron Devices, Kansai (IMFEDK), p66 (2012).<\/h4><\/li>

          7. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cPresent Status, Knowledge and Issues of Oxide Semiconductor Technology<\/em>\u201d, Proc. 19th<\/span>\u00a0International Display Workshops (IDW ’12), p405 (2012).<\/h4><\/li>

          8. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono,\u00a0\u201cRecent progress in oxide based p-channel TFT and complementary inverter\u201d<\/em>, Proc. The 12th International Meeting on Information Display (IMID2012), p322 (2012).<\/h4><\/li>

          9. Kamiya, K. Ide,\u00a0K. Nomura<\/u><\/strong>, H. Kumomi, and H. Hosono, \u201cStructural relaxation, crystallization, and defect passivation in amorphous In-Ga-Zn-O<\/em>; Proc. 20th<\/span>\u00a0International Display Workshops (IDW ’13) p478 (2013).<\/h4><\/li>

          10. Hasegawa, M. Inoue, T. Matsuda, M. Kimura,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201c3-D stacked complementary TFT devices using n-Type a-IGZO and p-Type F8T2 TFTs – comparison between stacked and sided configurations<\/em>\u201d, Proc. AMD6-3L (2013).<\/h4><\/li>

          11. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cElectronic structure, carrier transport, defects and impurities in amorphous oxide semiconductor<\/em>\u201d, SID Symposium Digest of Technical Papers\u00a044<\/strong>, p11 (2013).<\/h4><\/li>

          12. Kimura, T. Hasegawa, M. Inoue,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201c3-D stacked complementary TFT devices using n-type a-IGZO and p-type F8T2 TFTs -operation confirmation of NOT and NAND logic circuits-<\/em>\u201d, SID Symposium Digest of Technical Papers\u00a044<\/strong>, p995 (2013).<\/h4><\/li>

          13. Kimura, T. Hasegawa, T. Matsuda, K. Ide,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cLight irradiation and applied voltage history sensors using amorphous In-Ga-Zn-O thin-film transistors exposed to ozone annealing and fabricated under high oxygen pressure<\/em>\u201d, Digest of AM-FPD2014\u00a05-3<\/strong>, p319 (2014).<\/h4><\/li><\/ol><\/div><\/div>\n\t\t\t\t\t\t\t\t\t
            2009-2005<\/div>\n\t\t\t\t\t

            1. \u00a0Kamiya, S. Aiba, M. Miyakawa,\u00a0K. Nomura<\/u><\/strong>, S. Matsuishi, K. Hayashi, K. Ueda, M. Hirano, and H. Hosono, \u201cField-induced current modulation in nanoporous semiconductor, electron-doped<\/em>\u00a012CaO\u00b77A2<\/span>O3<\/span><\/em>\u201d, Chem. Mater.\u00a017,\u00a0<\/strong>6311 (2005).<\/h4><\/li>

            2. Takeda,\u00a0K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cGrowth of<\/em>\u00a0epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3<\/span>(ZnO)6<\/span>\u00a0single crystalline<\/em>\u00a0thin film<\/em>\u201d, Thin Solid Films\u00a0486,\u00a0<\/strong>28 (2005).<\/h4><\/li>

            3. Takagi,\u00a0K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport<\/em>\u00a0and electronic structure in amorphous oxide semiconductor, a-InGaZnO4<\/span><\/em>\u201d, Thin Solid Films\u00a0486,\u00a0<\/strong>38 (2005).<\/h4><\/li>

            4. Nomura<\/u><\/strong>, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, \u201cAmorphous oxide semiconductors towards high-performance flexible thin-film transistors<\/em>\u201d, Jpn. J. Appl. Phys.\u00a045<\/strong>, 4303 (2006).<\/h4><\/li>

            5. Kamiya, H. Hiramatsu,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cDevice applications of transparent oxide semiconductors: excitonic blue LED and transparent flexible TFT<\/em>\u201d, J. Electroceram.\u00a017<\/strong>, 267 (2006).<\/h4><\/li>

            6. Kamiya, Y. Takeda,\u00a0K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, M. Hirano, and H. Hosono, \u201cSelf-adjusted three-dimensional lattice-matched buffer layer for growing ZnO epitaxial film: homologous series layered oxide, InGaO3<\/span>(ZnO)5<\/span><\/em>\u201d, Cryst. Growth Des. 6, 2451 (2006).<\/h4><\/li>

            7. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cHigh-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering<\/em>\u201d, Appl. Phys. Lett.\u00a089<\/strong>, 112123 (2006).<\/h4><\/li>

            8. Sugiura, H. Ohta,\u00a0K. Nomura<\/u><\/strong>, M. Hirano, H. Hosono, and K. Koumoto, \u201cHigh electrical conductivity of layered cobalt oxide Ca3<\/span>Co4<\/span>O9<\/span>\u00a0epitaxial films grown by topotactic ion-exchange method\u201d<\/em>, Appl. Phys. Lett.\u00a089<\/strong>, 032111 (2006).<\/h4><\/li>

            9. Sugiura, H. Ohta,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, M. Hirano, H. Hosono, and K. Koumoto, \u201cEpitaxial Film Growth and Superconducting Behavior of Sodium-Cobalt Oxyhydrate, Nax<\/span>CoO2y<\/span>H2<\/span>O (x~0.3, y~1.3)<\/em>\u201d, Inorg. Chem. (communication)\u00a045<\/strong>, 1894 (2006).<\/h4><\/li>

            10. Matsuzaki,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, H. Hiramatsu, M. Hirano, and H. Hosono, \u201cField induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2<\/span>O3<\/span><\/em>\u201d, Appl. Phys. Lett.\u00a088<\/strong>, 092106 (2006).<\/h4><\/li>

            11. Sugiura, H. Ohta,\u00a0K. Nomura<\/u><\/strong>, M. Hirano, H. Hosono, and K. Koumoto, \u201cFabrication and thermoelectric properties of layered cobaltite, gamma-Sr0.32<\/span>Na0<\/span>.21<\/span>CoO2<\/span>\u00a0epitaxial films<\/em>\u201d, Appl. Phys. Lett.\u00a088<\/strong>, 082109 (2006).<\/h4><\/li>

            12. Matsuzaki, H. Hiramatsu,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cGrowth, structure and carrier transport properties of Ga2<\/span>O3<\/span>\u00a0epitaxial film examined for transparent field-effect transistor<\/em>\u201d, Thin Solid Films\u00a0496<\/strong>, 37 (2006).<\/h4><\/li>

            13. Y Ogo,\u00a0K Nomura<\/u><\/strong>, H Yanagi, H Ohta, T Kamiya, M Hirano, and H Hosono, \u201dGrowth and structure of heteroepitaxial thin films of homologous compounds RAO3<\/span>(MO)m<\/span>\u00a0by reactive solid-phase epitaxy: applicability to a variety of materials and epitaxial template layers<\/em>\u201d, Thin Solid Films\u00a0496<\/strong>, 64 (2006).<\/h4><\/li>

            14. Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, \u201cLocal coordination structure<\/em>\u00a0and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O:<\/em>\u00a0Experiment and ab initio calculations<\/em>\u201d, Phys. Rev. B\u00a075,\u00a0<\/strong>035212 (2007).<\/h4><\/li>

            15. Hayashi, M. Ofuji, N. Kaji, K. Takahashi, K. Abe, H. Yabuta, M. Sano, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201dCircuits using uniform TFTs based on amorphous In\u2013Ga\u2013Zn\u2013 O<\/em>\u201d, J. Soc. Inf. Display\u00a015<\/strong>, 915 (2007).<\/h4><\/li>

            16. Sugiura K, H. Ohta,\u00a0K. Nomura<\/u><\/strong>, T. Saito, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, \u201cThermoelectric properties of the layered Ca3<\/span>Co4<\/span>O9<\/span>\u00a0epitaxial films fabricated by topotactic ion-exchange method<\/em>\u201d, Mater. Trans.\u00a048<\/strong>, 2104 (2007).<\/h4><\/li>

            17. Iwasaki, N. Itagaki, T. Den, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cCombinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system<\/em>\u201d, Appl. Phys. Lett.\u00a090<\/strong>, 242114 (2007).<\/h4><\/li>

            18. Ogo, H. Yanagi, T. Kamiya,\u00a0K. Nomura<\/u><\/strong>, M. Hirano, and H. Hosono, \u201cEpitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3<\/span>FeTi2<\/span>O10<\/span><\/em>\u201d, J. Appl. Phys.\u00a0101<\/strong>, 103714 (2007).<\/h4><\/li>

            19. Ofuji, K. Abe, H. Shimizu, N. Kaji, R. Hayashi, M. Sano, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cFast thin-film transistor circuits based on amorphous oxide semiconductor<\/em>\u201d IEEE Elect. Dev. Lett.\u00a028<\/strong>, 273 (2007).<\/h4><\/li>

            20. Ohta, S. Kim, Y. Mune, T. Mizoguchi,\u00a0K. Nomura<\/u><\/strong>, S. Ohta, T. Nonomura, Y. Nakanishi, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, \u201cGiant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3<\/span><\/em>\u201d, Nature Mater.\u00a06<\/strong>, 129 (2007).<\/h4><\/li>

            21. Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, \u201cDefect passivation and homogenization<\/em>\u00a0of amorphous oxide thin-film transistor by wet O2 annealing<\/em>\u201d, Appl. Phys. Lett.\u00a093,\u00a0<\/strong>1921073 (2008).<\/h4><\/li>

            22. Nomura<\/u><\/strong>, T. Kamiya, H. Ohta, K. Shimizu, M. Hirano, and H. Hosono, \u201cRelationship between nonlocalized<\/em>\u00a0tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O<\/em>\u201d, Phys. Stat. Solidi (a)\u00a0205,<\/strong>1910 (2008).<\/h4><\/li>

            23. Nomura<\/u><\/strong>, T Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, \u201cSubgap states in transparent amorphous oxide semiconductor, In\u2013Ga\u2013Zn\u2013O, observed by<\/em>\u00a0bulk sensitive x-ray photoelectron spectroscopy<\/em>\u201d, Appl. Phys. Lett.\u00a092,\u00a0<\/strong>202117 (2008).<\/h4><\/li>

            24. Matsuzaki,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cEpitaxial growth of<\/em>\u00a0high mobility Cu2<\/span>O thin films and application to p-channel thin film transistor<\/em>\u201d, Appl. Phys. Lett.\u00a093,<\/strong>\u00a0202107 (2008).<\/h4><\/li>

            25. Itagaki, T. Iwasaki, H. Kumomi, T. Den,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cZn-ln-O based<\/em>\u00a0thin-film transistors: Compositional dependence<\/em>\u201d, Phys. Stat. Solidi (a)\u00a0205,\u00a0<\/strong>1915 (2008).<\/h4><\/li>

            26. Ogo,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cAmorphous Sn-Ga-Zn-O<\/em>\u00a0channel thin-film transistors<\/em>\u201d, Phys. Stat. Solidi (a)\u00a0205,\u00a0<\/strong>1920 (2008).<\/h4><\/li>

            27. Kamiya, K. Tajima,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, and H. Hosono, \u201cInterface electronic structures of zinc<\/em>\u00a0oxide and metals: First-principle study<\/em>\u201d, Phys. Stat. Solidi (a)\u00a0205,\u00a0<\/strong>1929 (2008).<\/h4><\/li>

            28. Nishio,\u00a0K. Nomura<\/u><\/strong>, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication and transport properties of 12CaO\u00b77Al2<\/span>O3\u00a0<\/span>(C12A7) electride nanowire<\/em>\u201d Phys. Stat. Solidi (a)\u00a0205,\u00a0<\/strong>2047 (2008).<\/h4><\/li>

            29. Ogo, H. Hiramatsu,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cP-channel<\/em>\u00a0thin-film transistor using p-type oxide semiconductor, SnO<\/em>\u201d, Appl. Phys. Lett.\u00a093,\u00a0<\/strong>32113 (2008).<\/h4><\/li>

            30. Mine, H Yanagi,\u00a0K Nomura<\/u><\/strong>, T Kamiya, M Hirano, and H. Hosono, \u201cControl of carrier<\/em>\u00a0concentration and surface flattening of CuGaO2<\/span>\u00a0epitaxial films for a p-channel transparent transistor<\/em>\u201d, Thin Solid Films\u00a0516,\u00a0<\/strong>5790 (2008).<\/h4><\/li>

            31. Shimura,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cSpecific contact<\/em>\u00a0resistances between amorphous oxide semiconductor In\u2013Ga\u2013Zn\u2013O and metallic electrodes<\/em>\u201d, Thin Solid Films\u00a0516,\u00a0<\/strong>5899 (2008).<\/h4><\/li>

            32. Hosono,\u00a0K. Nomura<\/u><\/strong>, Y. Ogo, T. Uruga, and T. Kamiya, \u201cFactors controlling electron transport<\/em>\u00a0properties in transparent amorphous oxide semiconductors<\/em>\u201d, J. Non-Cryst. Sol.\u00a0354,\u00a0<\/strong>796 (2008).<\/h4><\/li>

            33. -H. Hsieh, T. Kamiya,\u00a0K. Nomura<\/u><\/strong>, H. Hosono, and C.-C. Wu, \u201cModeling of amorphous InGaZnO4<\/span><\/em>\u00a0thin film transistors and their subgap density of states<\/em>\u201d, Appl. Phys. Lett.\u00a092,\u00a0<\/strong>133503 (2008).<\/h4><\/li>

            34. Kimura, T. Nakanishi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cTrap densities in amorphous<\/em>\u00a0InGaZnO4<\/span>\u00a0thin-film transistors<\/em>\u201d, Appl. Phys. Lett.\u00a092,\u00a0<\/strong>133512 (2008).<\/h4><\/li>

            35. K. Jayaraj, K. J. Saji,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOptical and electrical properties<\/em>\u00a0of amorphous zinc tin oxide thin films examined for thin film transistor application<\/em>\u201d, J. Vac. Sci. Technol.\u00a026,\u00a0<\/strong>495 (2008).<\/h4><\/li>

            36. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cAmorphous oxide channel TFTs<\/em>\u201d, Thin Solid Films\u00a0516,\u00a0<\/strong>1516 (2008).<\/h4><\/li>

            37. J. Saji, M. K. Jayaraj,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cOptical and carrier transport<\/em>\u00a0properties of cosputtered Zn-In-Sn-O films and their applications to TFTs<\/em>\u201d, J. Electrochem. Soc.\u00a0155,<\/strong>\u00a0H390 (2008).<\/h4><\/li>

            38. Ueda, T. Maeda, K. Nakayashiki, K. Goto, Y. Nakach, H. Takashima,\u00a0K. Nomura<\/u><\/strong>, K. Kajihara, and H. Hosono, \u201cPhotoluminescence from epitaxial films of perovskite-type alkaline-earth stannates<\/em>\u201d, Appl. Phys. Exp.\u00a01,\u00a0<\/strong>015003 (2008).<\/h4><\/li>

            39. -C. Fung, C.-S. Chuang,\u00a0K. Nomura<\/u><\/strong>, H.-P. D. Shieh, H. Hosono, and J. Kanicki, \u201cPhotofield-effect<\/em>\u00a0in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors<\/em>\u201d, J. Info. Display\u00a09,\u00a0<\/strong>21 (2008).<\/h4><\/li>

            40. Kamiya,\u00a0K. Nomura<\/u><\/strong>, M. Hirano, and H Hosono, \u201cElectronic structure of oxygen deficient<\/em>\u00a0amorphous oxide semiconductor a-InGaZnO4-x<\/span>: Optical analyses and first<\/em>\u2010principle calculations<\/em>\u201d, Phys. Stat. Solidi (c)\u00a05<\/strong>, 3098 (2008).<\/h4><\/li>

            41. Katase,\u00a0K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cFabrication of<\/em>\u00a0ScAlMgO4<\/span>\u00a0epitaxial thin films using ScGaO3<\/span>(ZnO)m<\/span>\u00a0buffer layers and its application to lattice-matched<\/em>\u00a0buffer layer for ZnO epitaxial growth<\/em>\u201d, Thin Solid Films\u00a0516<\/strong>, 5842 (2012).<\/h4><\/li>

            42. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cOrigins of threshold voltage shifts in room<\/em>\u00a0temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors<\/em>\u201d, Appl. Phys. Lett.\u00a095<\/strong>, 013502 (2009).<\/h4><\/li>

            43. Sato, M. Shimada, K. Abe, R. Hayashi, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cAmorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure<\/em>\u201d, Thin Solid Films\u00a0518<\/strong>, 1309 (2009).<\/h4><\/li>

            44. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cElectronic structures above mobility edges in crystalline and<\/em>\u00a0amorphous In-Ga-Zn-O: Percolation conduction examined by analytical model<\/em>\u201d, J. Display Technol.\u00a05<\/strong>, 462 (2009).<\/h4><\/li>

            45. Ohta, Y. Masuoka, R. Asahi, T. Kato, Y. Ikuhara,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cField-modulated<\/em>\u00a0thermopower in SrTiO3<\/span>-based field-effect transistors with amorphous 12CaO\u00b77Al2<\/span>O3<\/span>\u00a0glass gate<\/em>\u00a0insulator<\/em>\u201d, Appl. Phys. Lett.\u00a095<\/strong>, 113505 (2009).<\/h4><\/li>

            46. Ogo, H. Hiramatsu,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, \u201cTin<\/em>\u00a0monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT<\/em>\u00a0application<\/em>\u201d, Phys. Stat. Solidi (a)\u00a0206<\/strong>, 2187 (2009).<\/h4><\/li>

            47. Matsuzaki,\u00a0K. Nomura<\/u><\/strong>, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, \u201cEffects of<\/em>\u00a0post-annealing on (110) Cu2O epitaxial films and origin of low mobility in Cu2<\/span>O thin-film transistor<\/em>\u201d, Phys. Stat. Solidi (a)\u00a0206<\/strong>, 2192 (2009).<\/h4><\/li>

            48. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cOrigins of high mobility and low operation voltage of<\/em>\u00a0amorphous oxide TFTs: electronic structure, electron transport, defects and doping<\/em>\u201d, J. Display Technol.\u00a05<\/strong>, 273 (2009).<\/h4><\/li>

            49. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cElectronic structure of the amorphous oxide semiconductor<\/em>\u00a0a-InGaZnO4-x<\/span>: Tauc-Lorentz optical model and origins of subgap states, defects and doping<\/em>\u201d, Phys. Stat. Solidi (a)\u00a0206<\/strong>, 860 (2009).<\/h4><\/li>

            50. Omura, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cFirst-principles study of<\/em>\u00a0native point defects in crystalline indium gallium zinc oxide<\/em>\u201d, J. Appl. Phys.\u00a0105<\/strong>, 093712 (2009).<\/h4><\/li>

            51. Katase,\u00a0K. Nomura<\/u><\/strong>, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cLarge domain<\/em>\u00a0growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4<\/span><\/em>\u201d, Mater. Sci. Eng. B\u00a0161<\/strong>, 66 (2009).<\/h4><\/li>

            52. Sugiura, H. Ohta, S. Nakagawa, R. Huang, Y. Ikuhara,\u00a0K. Nomura<\/strong>, H. Hosono, and K. Koumoto, \u201cAnisotropic carrier transport properties in layered cobaltate epitaxial films grown by<\/em>\u00a0reactive solid-phase epitaxy<\/em>\u201d, Appl. Phys. Lett.\u00a094<\/strong>, 152105 (2009).<\/h4><\/li>

            53. Sato, M. Shimada, K. Abe, R. Hayashi, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cAmorphous In-Ga-Zn-O coplanar homojunction thin-film transistor<\/em>\u201d, Appl. Phys. Lett.\u00a094<\/strong>, 133502 (2009).<\/h4><\/li>

            54. Sugiura, H. Ohta, Y. Ishida, R. Huang, T. Saito, Y. Ikuhara,\u00a0K. Nomura<\/u><\/strong>, H. Hosono, and K. Koumoto, \u201cStructural transformation of Ca-arrangements and carrier transport properties in<\/em>\u00a0Ca0.33<\/span>CoO2<\/span>\u00a0epitaxial films<\/em>\u201d, Appl. Phys. Expr.\u00a02<\/strong>, 035503 (2009).<\/h4><\/li><\/ol>

              \u00a0<\/h4>

              Conference proceedings<\/h4>

              \u00a0<\/h4>

              1. Hosono, T. Kamiya, and\u00a0K. Nomura<\/u><\/strong>, \u201cTransparent high- performance FET using amorphous oxide semiconductors<\/em>\u201d, Digest of Technical papers of AM-LCD, p83 (2005).<\/h4><\/li>

              2. Sugiura, H. Ohta,\u00a0K. Nomura<\/u><\/strong>, T. Saito, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, \u201cThermoelectric properties of epitaxial films of layered cobalt oxides fabricated by topotactic ion-exchange methods<\/em>, 25th<\/span>\u00a0International Conference on Thermoelectrics (ICT ’06), p99 (2006).<\/h4><\/li>

              3. Ofuji, K. Abe, N. Kaji, R. Hayashi, M. Sano, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cIntegrated circuits based on amorphous indium-gallium-zinc-oxide-channel thin-film transistors<\/em>\u201d, ECS Transactions\u00a03,\u00a0<\/strong>p293 (2006).<\/h4><\/li>

              4. Kumomi, N. Kaji, H. Yabuta, M. Sano, K. Abe, T. Den,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cAmorphous oxide channel TFTs fabricated with RF sputtering method<\/em>\u201d, Proc. International TFT Conference 2006, p176 (2006).<\/h4><\/li>

              5. Iwasaki, N. Itagaki, T. Den, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, and H. Hosono, \u201cCombinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor<\/em>\u201d, Mater. Res. Soc. Symp. Proc.\u00a0928,\u00a0<\/strong>0928-GG10-04 (2006).<\/h4><\/li>

              6. Abe, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cAmorphous In-Ga-Zn-O based TFTs and circuits\u201d<\/em>, Proc. IDW ’07, AMD9-2 (2007).<\/h4><\/li>

              7. Abe, M. Ofuji, H. Shimizu, K. Takahashi, N. Kaji, A. Sato, Y. Tateishi, H. Yabuta, R. Hayashi, M. Sano, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cFundamental analysis on the on-operation of an amorphous In-Ga-Zn-O based gated four-probe TFT<\/em>\u201d, ITC 2008 (2008).<\/h4><\/li>

              8. T-C. Fung, C.-S. Chuang, B.G. Mullins,\u00a0Nomura<\/u><\/strong>, T. Kamiya, H.P.D. Shieh, and H. Hosono, \u201cPhotofield-effect in amorphous InGaZnO TFTs<\/em>\u201d, Digest Tech. Papers IMID 2008, p1208 (2008).<\/h4><\/li>

              9. T-C. Fung,\u00a0Nomura<\/u><\/strong>, H. Hosono and J. Kanicki, \u201cPLD Amorphous In-Ga-Zn-O TFTs for future optoelectronics\u201d, Digest of Technocal Papers<\/em>, SID 2008, p117 (2008).<\/h4><\/li>

              10. -S. Chuang, T.-C. Fung, B. G. Mullins,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, H.-P. D. Shieh, H. Hosono, and J. Kanicki, \u201cPhotosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays<\/em>\u201d, Proc. SID International Symposium (SID 2008), p13 (2008).<\/h4><\/li>

              11. H. Hsieh, T. Kamiya,\u00a0K. Nomura<\/u><\/strong>, H. Hosono, and C.C. Wu, \u201cModeling of amorphous oxide semiconductor thin film transistors and subgap density of states<\/em>\u201d, SID Symposium Digest of Technical Papers\u00a039<\/strong>, p1277 (2008).<\/h4><\/li>

              12. Hayashi, A.Sato, M. Ofuji, K.Abe, H. Yabuta, M. Sano, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cImproved amorphous In-Ga-Zn-O TFTs<\/em>, SID Symposium Digest of Technical Papers\u00a039<\/strong>, p621 (2008).<\/h4><\/li>

              13. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cWhat have been clarified for amorphous oxide semiconductors?<\/em>\u201d, Int’l Display Manufacturing Conference (IDMC)\/ 3D Systems and Applications (3DSA) \/ Asia Display 2009, Thu-S22-03 (2009).<\/h4><\/li>

              14. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cDefects and doping in amorphous oxide semiconductor studied by first-principles calculations<\/em>\u201d Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics, 2B-I (2009).<\/h4><\/li>

              15. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cImpact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor<\/em>\u201d, Proc. 16th International Display Workshops (IDW’09), p1673 (2009).<\/h4><\/li>

              16. Kamiya,\u00a0K. Nomura<\/u><\/strong>, and H. Hosono, \u201cAmorphous oxide semiconductor: Factors determining TFT performance and stability<\/em>\u201d, Proc. IMID2010, p322 (2009).<\/h4><\/li>

              17. Omura, T. Iwasaki, H. Kumomi,\u00a0K. Nomura<\/u><\/strong>, T. Kamiya, M. Hirano, and H. Hosono, \u201cFirst- principles calculation for effect of impurities on electronic states of amorphous In-Ga-Zn-O<\/em>\u201d, Mater. Res. Soc. Symp. Proc., p1109 (2009).<\/h4><\/li><\/ol><\/div><\/div>\n\t\t\t\t\t\t\t\t\t
                2004-<\/div>\n\t\t\t\t\t

                1. Nomura<\/u><\/strong>, Y. Ishikawa, and N. Shibata, \u201cCrystallinity of AlN film deposited by reactive sputtering method<\/em>\u201d, J. Ceram. Soc. Jpn.\u00a0<\/em>102<\/strong>, 1079 (1995).<\/h4><\/li>

                2. Nomura<\/u><\/strong>, S. Kawai, and N. Shibata, \u201cAnalysis of reaction at Au\/Si3N4 interface by XPS-SIMS<\/em>\u201d, J. Ceram. Soc. Jpn.\u00a0104<\/strong>, 1167 (1996).<\/h4><\/li>

                3. Nomura<\/u><\/strong>, T. Takeda, N. Shibata, and M. Maeda, \u201cIn-situ Observation of crystallization process of ferroelectric thin films by Raman microspectroscopy<\/em>\u201d, Jpn. J. Appl. Phys.\u00a039,\u00a0<\/strong>5247 (2000).<\/h4><\/li>

                4. Nomura<\/u><\/strong>, N. Shibata, and M. Maeda, \u201cFabrication of barium titanite thin films by potentiostatic electrochemical deposition<\/em>\u201d, J. Ceram. Soc. Jpn.\u00a0109,\u00a0<\/strong>915 (2001).<\/h4><\/li>

                5. Nomura<\/u><\/strong>, N. Shibata, and M. Maeda, \u201cOrientation control of zinc oxide thin films by pulsed current electrolysis<\/em>\u201d, J. Cryst. Growth\u00a0235,\u00a0<\/strong>224 (2002).<\/h4><\/li>

                6. Nomura<\/u><\/strong>, N. Shibata, and M. Maeda, \u201cPreparation of zinc oxide thin films by pulsed current electrolysis<\/em>\u201d, J. Electrochem. Soc.\u00a0149,\u00a0<\/strong>F76 (2002).<\/h4><\/li>

                7. Nomura<\/u><\/strong>, H. Ohta, K. Ueda, M. Orita, M. Hirano, and H. Hosono, \u201cNovel film growth technique of single crystalline In2<\/span>O3<\/span>(ZnO)m<\/span>\u00a0(m=integer) homologous compound<\/em>\u201d, Thin Solid Films\u00a0411,\u00a0<\/strong>147 (2002).<\/h4><\/li>

                8. Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cElectron transport in InGaO3<\/span>(ZnO)m<\/span>\u00a0(m = integer) studied using single-crystalline thin films and transparent MISFETs<\/em>\u201d, Thin Solid Films\u00a0445,\u00a0<\/strong>322 (2003).<\/h4><\/li>

                9. Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cThin film transistor fabricated in single-crystalline transparent oxide semiconductor<\/em>\u201d, Science\u00a0300,\u00a0<\/strong>1269 (2003).<\/h4><\/li>

                10. Ohta,\u00a0K. Nomura<\/u><\/strong>, H. Hiramatsu, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cFrontier of transparent oxide semiconductors<\/em>\u201d, Solid-State Electronics\u00a047,\u00a0<\/strong>2261 (2003).<\/h4><\/li>

                11. Ohta,\u00a0K. Nomura<\/u><\/strong>, M. Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara, and H. Hosono, \u201cSingle crystalline films of the homologous series InGaO3<\/span>(ZnO)m<\/span>\u00a0grown by reactive solid-phase epitaxy<\/em>\u201d, Adv. Funct. Mater.\u00a013,\u00a0<\/strong>139 (2003).<\/h4><\/li>

                12. Nomura<\/u><\/strong>, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cRoom temperature<\/em>\u00a0fabrication of transparent flexible thin film transistors using amorphous oxide semiconductors<\/em>\u201d, Nature\u00a0432,\u00a0<\/strong>488 (2004).<\/h4><\/li>

                13. Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport in<\/em>\u00a0transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline<\/em>\u00a0InGaO3<\/span>(ZnO)5<\/span>\u00a0films<\/em>\u201d, Appl. Phys. Lett.\u00a085,\u00a0<\/strong>1993 (2004).<\/h4><\/li>

                14. Nomura<\/u><\/strong>, H. Ohta, T. Suzuki, C. Honjyo, K. Ueda, T. Kamiya, M. Orita, Y. Ikuhara, M. Hirano, and H. Hosono, \u201dGrowth mechanism for single-crystalline thin film of InGaO3<\/span>(ZnO)5<\/span>\u00a0by reactive solid phase<\/em>\u00a0epitaxy<\/em>\u201d, J. Appl. Phys.\u00a095,\u00a0<\/strong>5532 (2004).<\/h4><\/li>

                15. Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono,\u201d\u00a0All oxide transparent MISFET<\/em>\u00a0using high-k dielectrics gate<\/em>\u201d, Microelectron. Eng.\u00a072,\u00a0<\/strong>294 (2004).<\/h4><\/li>

                16. Kamiya, H. Ohta, H. Hiramatsu, K. Hayashi,\u00a0K. Nomura<\/u><\/strong>, S. Matsuishi, K. Ueda, M. Hirano, and H. Hosono, \u201cNatural nanostructures in ionic semiconductors<\/em>\u201d, Microelectron Eng.\u00a073-4,\u00a0<\/strong>620 (2004).<\/h4><\/li>

                17. Kamiya, H. Ohta, M. Kamiya,\u00a0K. Nomura<\/u><\/strong>, K. Ueda, M. Hirano, and H. Hosono, \u201cLi-doped NiO<\/em>\u00a0epitaxial thin film with atomically flat surface<\/em>\u201d, J. Mater. Res.\u00a019,\u00a0<\/strong>913 (2004).<\/h4><\/li>

                18. Ohta, T. Kambayashi,\u00a0K. Nomura<\/u><\/strong>, M. Hirano, K. Ishikawa, H. Takezoe, and H. Hosono, \u201cTransparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel<\/em>\u201d, Adv. Mater.\u00a016,\u00a0<\/strong>312 (2004).<\/h4><\/li><\/ol>

                  \u00a0<\/h4>

                  Conference proceedings<\/h2>

                  \u00a0<\/h4>

                  1. Ohta, M. Orita, H. Hiramatsu, K. Nomura, M. Miyakawa, K. Ueda, M. Hirano, and H. Hosono, “Frontier of transparent conductive oxides<\/em>“, Proceedings of CIMTEC 2002 \/ 10th International Ceramics Congress and 3rd Forum on New Materials, Ed. By P. Vincenzini Part D, p983 (2002).<\/h4><\/li>

                  2. Ohta,\u00a0K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, and H. Hosono, \u201cReactive solid-phase epitaxy ~ A novel growth method for single-crystalline<\/em>\u201d, Mater. Res. Soc. Symp. Proc.\u00a0747<\/strong>, V2.5 (2003).<\/h4><\/li>

                  3. Nomura<\/u><\/strong>, H.Ohta, K.Ueda, T.Kamiya, M.Hirano, and H. Hosono, \u201dFabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3<\/span>(ZnO)5<\/span>\u00a0thin film<\/em>\u201d, Mater. Res. Soc. Symp. Proc.\u00a0747,<\/strong>\u00a0V2.6 (2003).<\/h4><\/li>

                  4. Ohta,\u00a0K. Nomura<\/u><\/strong>, S. W. Kim, S. Ohta, K Koumoto, M Hirano, and H. Hosono, \u201cSolid-phase epitaxial film growth of thermoelectric oxide semiconductor, Nax<\/span>CoO2<\/span>\u201d<\/em>, The 23rd International Conference on Thermoelectrics proceedings (2004).<\/h4><\/li>

                  5. Ohta,\u00a0K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara, and H. Hosono, \u201cHigh-quality epitaxial film growth of transparent oxide semiconductors\u201d,\u00a0<\/em>J. Ceram. Soc. Jpn. Suppl.\u00a0112,\u00a0<\/strong>S602 (2004).<\/h4><\/li>

                  6. Ohta,\u00a0K. Nomura<\/u><\/strong>, H. Hiramatsu, T. Kamiya, M. Hirano, and H. Hosono, \u201cEpitaxial growth and application of transparent oxide semiconductors\u201d<\/em>, Electrochem. Soc. Proc. (2004).<\/h4><\/li>

                  7. Nomura<\/u><\/strong>, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, \u201cCarrier transport of extended and localized states in InGaO3<\/span>(ZnO)5<\/span><\/em>\u201d, Mater. Res. Soc. Symp. Proc.\u00a0811<\/strong>, E2.9.1 (2004).<\/h4><\/li><\/ol><\/div>\n\t\t\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
                    \n\t\t\t\t
                    \n\t\t\t\t\t
                    <\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
                    \n\t\t\t\t\t\t
                    \n\t\t\t\t
                    \n\t\t\t\t
                    \n\t\t\t
                    \n\t\t\t\t\t
                    \n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

                    JOURNAL PAPERS & conference proceedings Google scholar 2021- 2020-2015 2014-2010 2009-2005 2004- 2021- 1.\u00a0\u00a0\u00a0\u00a0\u00a0K. Nomura, “Recent progress of oxide-TFT-based inverter technology”,\u00a0Journal of Information Display (2021) 2.\u00a0\u00a0Hsuan Chang, Chi-Hsin Huang, and Kenji Nomura, “Low-Temperature Solution-Processed n-Channel SnO2\u00a0Thin-FilmTransistors and High-Gain Zero-VGS-Load Inverter”,\u00a0ACS Appl. Electron.Mater. (2021). 3.\u00a0 Chi-Hsin Huang, Hsuan Chang, Tzu-Yi Yang, Yi-Chung Wang, Yu-Lun Chueh, and […]<\/p>\n","protected":false},"author":2,"featured_media":652,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-80","page","type-page","status-publish","has-post-thumbnail","hentry"],"_links":{"self":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/80","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=80"}],"version-history":[{"count":64,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/80\/revisions"}],"predecessor-version":[{"id":1057,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/80\/revisions\/1057"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=\/wp\/v2\/media\/652"}],"wp:attachment":[{"href":"https:\/\/team.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=80"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}